Patents by Inventor Yu-Tsai Teng
Yu-Tsai Teng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105879Abstract: A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.Type: ApplicationFiled: November 29, 2023Publication date: March 28, 2024Applicant: Quanzhou sanan semiconductor technology Co., Ltd.Inventors: TSUNG-MING LIN, CHUNG-YING CHANG, YI-JUI HUANG, YU-TSAI TENG
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Publication number: 20230077761Abstract: A light-emitting device includes a substrate, a semiconductor structure, and an insulating reflective layer. The substrate has an upper surface and a lower surface. The semiconductor structure is disposed on the upper surface of the substrate. A projection of the semiconductor structure on the upper surface of the substrate has an outer periphery spaced apart a distance from an outer periphery of the upper surface of the substrate. The insulating reflective layer covers at least a part of the semiconductor structure and has an extending portion extending outwardly from the semiconductor structure and covering a part of the upper surface of the substrate. A peripheral end of the extending portion of the insulating reflective layer has an inclined lateral surface, and an included angle defined between the inclined lateral surface and the upper surface of the substrate is not less than 60°.Type: ApplicationFiled: September 12, 2022Publication date: March 16, 2023Inventors: Chung-Ying CHANG, Yi-Jui HUANG, Tsung-Ming LIN, Kunta HSIEH, Ji-Pu WU, Yu-Tsai TENG
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Publication number: 20230081600Abstract: A light-emitting device includes a substrate and a semiconductor light-emitting stack. The substrate includes an upper surface, a first side surface, and a second side surface adjacent to the first side surface. The semiconductor light-emitting stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer that are sequentially disposed on the upper surface of the substrate in such order. The first side surface includes X number of first laser inscribed marks, and the second side surface includes Y number of second laser inscribed marks, in which Y>X>0 and Y?3. A method for manufacturing the light-emitting device is also provided herein.Type: ApplicationFiled: November 18, 2022Publication date: March 16, 2023Inventors: Yi-Jui HUANG, Tsung-Ming LIN, Yu-Tsai TENG, Chung-Ying CHANG
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Publication number: 20230052304Abstract: A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 ?m. A display apparatus and a lighting apparatus are also disclosed.Type: ApplicationFiled: August 11, 2022Publication date: February 16, 2023Inventors: BAOJUN SHI, JIN XU, SHIWEI LIU, DAZHONG CHEN, SHUIJIE WANG, KE LIU, CHUNG-YING CHANG, WEN-CHIA HUANG, YU-TSAI TENG
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Publication number: 20230007967Abstract: A light emitting diode device includes a substrate having a substrate surface, an epitaxial structure having an epitaxial surface opposite to the substrate surface, and a plurality of bridging electrodes disposed on the epitaxial surface. The epitaxial structure includes first, second and third light emitting units spacedly and sequentially disposed on the substrate surface. A projection of the second light emitting unit has a first edge and a second edge that is connected with and perpendicular to the first edge. The epitaxial surface has an operating zone on the second light emitting unit that is adapted to be pushed by an ejector pin. A length of the second edge is equal to or greater than a diameter of the operating zone.Type: ApplicationFiled: July 11, 2022Publication date: January 12, 2023Inventors: SHIWEI LIU, DAZHONG CHEN, JIN XU, BAOJUN SHI, SHUIJIE WANG, KE LIU, QIANG WANG, YU-TSAI TENG, WEN-CHIA HUANG, CHUNG-YING CHANG
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Publication number: 20220406966Abstract: A light-emitting diode (LED) chip includes a semiconductor epitaxial structure and a reflective structure. The reflective structure is formed on an upper surface and side surfaces of the semiconductor epitaxial structure. The reflective structure has a reflectance of less than 30% for light having a first wavelength which is different from a wavelength of light emitted from the semiconductor epitaxial structure. A semiconductor light-emitting device including the LED chip, and a display device including a plurality of the LED chips are also disclosed.Type: ApplicationFiled: June 10, 2022Publication date: December 22, 2022Applicant: Quanzhou Sanan Semiconductor Technology Co., Ltd.Inventors: Yi-Jui HUANG, Tsung-Ming LIN, Chung-Ying CHANG, Yu-Tsai TENG
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Publication number: 20220271205Abstract: Alight-emitting diode includes an epitaxial unit, a first electrode, and a second electrode. One of the first electrode and the second electrode includes a first reflective layer, a wire-bonding electrode layer, a second reflective layer wrapping a portion of the wire-bonding electrode layer, and a stress adjustment layer which wraps around the first reflective layer. The first reflective layer includes platinum, and the second reflective layer includes a material which has a Mohs hardness of not less than 6. The stress adjustment layer has a Mohs hardness of not less than 6, and the stress adjustment layer has a thickness that is 65% to 75% of a thickness of the first reflective layer.Type: ApplicationFiled: May 11, 2022Publication date: August 25, 2022Inventors: BO-YU CHEN, YU-TSAI TENG, CHUNG-YING CHANG
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Publication number: 20220158040Abstract: A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of first light-transmitting layers and at least one set of second light-transmitting layers stacked on each other in the first direction. The first light-transmitting layers has interface roughness greater than that of the second light-transmitting layers.Type: ApplicationFiled: January 28, 2022Publication date: May 19, 2022Applicant: QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Hongbin TANG, Yu-Tsai TENG, Yaowei CHUANG, Ji-pu WU, Chiawen WU, Wen-Chia HUANG, Chung-Ying CHANG
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Publication number: 20210313488Abstract: A composite reflective structure includes at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed therebetween. The first refractive index is greater than the second refractive index. Also disclosed herein is a light-emitting diode chip including the abovementioned composite reflective structure and a light-emitting diode device including the light-emitting diode chip.Type: ApplicationFiled: June 16, 2021Publication date: October 7, 2021Inventors: Chung-Ying Chang, Ji-Pu Wu, Hongbin Tang, Qihua Liao, Yu-Tsai Teng, Chia-Hao Chang, Shutian Qiu
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Patent number: 11107950Abstract: A light emitting chip includes a first-type semiconductor layer, a light emitting layer, and a second-type semiconductor layer which are disposed in such order, a passivation layer, and a current spreading layer. The second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the first-type semiconductor layer. The mesa structure has a lateral surface over which the passivation layer is disposed. The current spreading layer is disposed in contact with the second-type semiconductor layer. A distance between peripheries of a contact surface of the current spreading layer and a top surface of the second-type semiconductor layer is not greater than 5 ?m. A method for producing the chip is also disclosed.Type: GrantFiled: January 20, 2020Date of Patent: August 31, 2021Assignee: Xiamen San'an Optoelectronics Co., Ltd.Inventors: Yu-Tsai Teng, Yan Feng, Shuo Yang, Chung-Ying Chang, Shutian Qiu
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Publication number: 20210057396Abstract: The present disclosure provides a manufacturing method for an LED display screen. The method includes preparing a batch of LED chips of the same or different specification; picking up the LED chips illogically according to a random sampling method, and arranging the picked led chips in sequence; and packaging and assembling the LED chips arranged in sequence to form the LED display screen. The LED display screen includes an area which includes a plurality of LED chips, and at least two adjacent LED chips of the plurality of LED chips are of different specifications, the specification of the LED chip comprising a specification of at least one of color and brightness.Type: ApplicationFiled: November 6, 2020Publication date: February 25, 2021Inventors: Ji-Pu WU, Tsung-Ming LIN, Yu-Tsai TENG, Ho-Chia TSENG
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Publication number: 20200152834Abstract: A light emitting chip includes a first-type semiconductor layer, a light emitting layer, and a second-type semiconductor layer which are disposed in such order, a passivation layer, and a current spreading layer. The second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the first-type semiconductor layer. The mesa structure has a lateral surface over which the passivation layer is disposed. The current spreading layer is disposed in contact with the second-type semiconductor layer. A distance between peripheries of a contact surface of the current spreading layer and a top surface of the second-type semiconductor layer is not greater than 5 ?m. A method for producing the chip is also disclosed.Type: ApplicationFiled: January 20, 2020Publication date: May 14, 2020Inventors: Yu-Tsai TENG, Yan FENG, Shuo YANG, Chung-Ying CHANG, Shutian QIU
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Patent number: 8552441Abstract: A method for manufacturing the AlGaInP LED having a vertical structure is provided, including: growing, epitaxially, a buffer layer, an n-type contact layer, an n-type textured layer, a confined layer, an active layer, a p-type confined layer and a p-type window layer in that order on a temporary substrate, to form a texturable epitaxial layer; forming a transparent conducting film with periodicity on the p-type window layer of the epitaxial layer, forming a regulated through-hole on the transparent conducting film, and filling the through-hole with a conducting material; forming a total-reflection metal layer on the transparent conducting film; bonding a permanent substrate with the texturable epitaxial layer via a bonding layer, and bring the total-reflection metal layer into contact with the bonding layer; removing the temporary substrate and the buffer layer; forming an n-type extension electrode on the exposed n-type contact layer; removing the n-type contact layer, and forming a pad on the n-type texturType: GrantFiled: August 19, 2011Date of Patent: October 8, 2013Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.Inventors: Hou-Jun Wu, Yu-Tsai Teng, Po-Hung Tsou, Hsiang-Ping Cheng, Jyh-Chiarng Wu
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Publication number: 20120043566Abstract: A method for manufacturing the AlGaInP LED having a vertical structure is provided, including: growing, epitaxially, a buffer layer, an n-type contact layer, an n-type textured layer, a confined layer, an active layer, a p-type confined layer and a p-type window layer in that order on a temporary substrate, to form a texturable epitaxial layer; forming a transparent conducting film with periodicity on the p-type window layer of the epitaxial layer, forming a regulated through-hole on the transparent conducting film, and filling the through-hole with a conducting material; forming a total-reflection metal layer on the transparent conducting film; bonding a permanent substrate with the texturable epitaxial layer via a bonding layer, and bring the total-reflection metal layer into contact with the bonding layer; removing the temporary substrate and the buffer layer; forming an n-type extension electrode on the exposed n-type contact layer; removing the n-type contact layer, and forming a pad on the n-type texturType: ApplicationFiled: August 19, 2011Publication date: February 23, 2012Inventors: Hou-Jun Wu, Yu-Tsai Teng, Po-Hung Tsou, Hsiang-Ping Cheng, Jyh-Chiarng Wu