Patents by Inventor Yu-Tseng HSIEN

Yu-Tseng HSIEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11182528
    Abstract: The present disclosure relates to a method of performing electromigration sign-off. The method includes determining a change in temperature due to joule heating from an RMS current of a first interconnect. The change in temperature due to joule heating is added to a change in temperature due to device self-heating to determine a first change in real temperature. A first average current limit is determined for the first interconnect using the first change in real temperature. A first average current on the first interconnect is compared to the first average current limit to determine if a first electromigration violation is present on the first interconnect. A second average current is determined for a second interconnect using a second change in real temperature. The second average current is compared to a second average current limit to determine if a second electromigration violation is present on the second interconnect.
    Type: Grant
    Filed: July 15, 2020
    Date of Patent: November 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Tseng Hsien, Chin-Shen Lin, Ching-Shun Yang, Jui-Feng Kuan
  • Publication number: 20200342156
    Abstract: The present disclosure relates to a method of performing electromigration sign-off. The method includes determining a change in temperature due to joule heating from an RMS current of a first interconnect. The change in temperature due to joule heating is added to a change in temperature due to device self-heating to determine a first change in real temperature. A first average current limit is determined for the first interconnect using the first change in real temperature. A first average current on the first interconnect is compared to the first average current limit to determine if a first electromigration violation is present on the first interconnect. A second average current is determined for a second interconnect using a second change in real temperature. The second average current is compared to a second average current limit to determine if a second electromigration violation is present on the second interconnect.
    Type: Application
    Filed: July 15, 2020
    Publication date: October 29, 2020
    Inventors: Yu-Tseng Hsien, Chin-Shen Lin, Ching-Shun Yang, Jui-Feng Kuan
  • Patent number: 10719652
    Abstract: The present disclosure, in some embodiments, relates to an electromigration sign-off tool. The tool includes electronic memory configured to store an integrated chip design and an environmental temperature having a same value corresponding to a plurality of interconnect wires within the integrated chip design. An adder is configured to add the environmental temperature to a plurality of real temperatures to determine a plurality of actual temperatures having different values corresponding to different ones of the plurality of interconnect wires. The plurality of real temperatures account for Joule heating on the plurality of interconnect wires. An average current limit calculation element is configured to determine an average current limit at a first one of the plurality of actual temperatures. A comparator is configured to determine an electromigration violation on a first interconnect wire by comparing the average current limit to an average current of the first interconnect wire.
    Type: Grant
    Filed: July 2, 2019
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Tseng Hsien, Chin-Shen Lin, Ching-Shun Yang, Jui-Feng Kuan
  • Publication number: 20190325105
    Abstract: The present disclosure, in some embodiments, relates to an electromigration sign-off tool. The tool includes electronic memory configured to store an integrated chip design and an environmental temperature having a same value corresponding to a plurality of interconnect wires within the integrated chip design. An adder is configured to add the environmental temperature to a plurality of real temperatures to determine a plurality of actual temperatures having different values corresponding to different ones of the plurality of interconnect wires. The plurality of real temperatures account for Joule heating on the plurality of interconnect wires. An average current limit calculation element is configured to determine an average current limit at a first one of the plurality of actual temperatures. A comparator is configured to determine an electromigration violation on a first interconnect wire by comparing the average current limit to an average current of the first interconnect wire.
    Type: Application
    Filed: July 2, 2019
    Publication date: October 24, 2019
    Inventors: Yu-Tseng Hsien, Chin-Shen Lin, Ching-Shun Yang, Jui-Feng Kuan
  • Patent number: 10346576
    Abstract: The present disclosure, in some embodiments, relates to a method of performing electromigration sign-off. The method includes determining an environmental temperature having a same value corresponding to a plurality of interconnect wires within a plurality of electrical networks of an integrated chip design. A plurality of actual temperatures having different values corresponding to different ones of the plurality of interconnect wires are determined. The plurality of actual temperatures are respectively determined by adding the environmental temperature to a real temperature that accounts for Joule heating one of the plurality of interconnect wires. An electromigration margin for a first interconnect wire within a first electrical network of the plurality of electrical networks is determined. The electromigration margin is determined at a first one of the plurality of actual temperatures corresponding to the first interconnect wire. The electromigration margin is compared to an electromigration metric.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: July 9, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Tseng Hsien, Chin-Shen Lin, Ching-Shun Yang, Jui-Feng Kuan
  • Publication number: 20180330036
    Abstract: The present disclosure, in some embodiments, relates to a method of performing electromigration sign-off. The method includes determining an environmental temperature having a same value corresponding to a plurality of interconnect wires within a plurality of electrical networks of an integrated chip design. A plurality of actual temperatures having different values corresponding to different ones of the plurality of interconnect wires are determined. The plurality of actual temperatures are respectively determined by adding the environmental temperature to a real temperature that accounts for Joule heating one of the plurality of interconnect wires. An electromigration margin for a first interconnect wire within a first electrical network of the plurality of electrical networks is determined. The electromigration margin is determined at a first one of the plurality of actual temperatures corresponding to the first interconnect wire. The electromigration margin is compared to an electromigration metric.
    Type: Application
    Filed: July 26, 2018
    Publication date: November 15, 2018
    Inventors: Yu-Tseng Hsien, Chin-Shen Lin, Ching-Shun Yang, Jui-Feng Kuan
  • Patent number: 10042967
    Abstract: The present disclosure relates to an electromigration (EM) sign-off methodology that determines EM violations of components on different electrical networks of an integrated chip design using separate temperatures. In some embodiments, the method determines a plurality of actual temperatures that respectively correspond to one or more components within one of a plurality of electrical networks within an integrated chip design. An electromigration margin is determined for a component within a selected electrical network of the plurality of electrical networks. The electromigration margin is determined at one of the plurality of actual temperatures that corresponds to the component within the selected electrical network. The electromigration margin is compared to an electromigration metric to determine if an electromigration violation of the component within the selected electrical network is present.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: August 7, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Tseng Hsien, Chin-Shen Lin, Ching-Shun Yang, Jui-Feng Kuan
  • Patent number: 9773089
    Abstract: A method includes generating a schematic of an integrated circuit (IC), the IC having a circuit component. The method also includes searching a database having one or more configurations of the circuit component, each of the one or more configurations of the circuit component having a corresponding estimated resistance capacitance (RC) value and an assigned color scheme based on the estimated RC value. The method further includes displaying the circuit component in the schematic as a symbol representing the circuit component, the symbol representing the circuit component being displayed having the assigned color scheme of a selected circuit component configuration.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: September 26, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hui Yu Lee, Chi-Wen Chang, Yu-Tseng Hsien, Ya Yun Liu
  • Publication number: 20170141003
    Abstract: The present disclosure relates to an electromigration (EM) sign-off methodology that determines EM violations of components on different electrical networks of an integrated chip design using separate temperatures. In some embodiments, the method determines a plurality of actual temperatures that respectively correspond to one or more components within one of a plurality of electrical networks within an integrated chip design. An electromigration margin is determined for a component within a selected electrical network of the plurality of electrical networks. The electromigration margin is determined at one of the plurality of actual temperatures that corresponds to the component within the selected electrical network. The electromigration margin is compared to an electromigration metric to determine if an electromigration violation of the component within the selected electrical network is present.
    Type: Application
    Filed: September 21, 2016
    Publication date: May 18, 2017
    Inventors: Yu-Tseng Hsien, Chin-Shen Lin, Ching-Shun Yang, Jui-Feng Kuan
  • Publication number: 20160321392
    Abstract: A method includes generating a schematic of an integrated circuit (IC), the IC having a circuit component. The method also includes searching a database having one or more configurations of the circuit component, each of the one or more configurations of the circuit component having a corresponding estimated resistance capacitance (RC) value and an assigned color scheme based on the estimated RC value. The method further includes displaying the circuit component in the schematic as a symbol representing the circuit component, the symbol representing the circuit component being displayed having the assigned color scheme of a selected circuit component configuration.
    Type: Application
    Filed: July 7, 2016
    Publication date: November 3, 2016
    Inventors: Hui Yu LEE, Chi-Wen CHANG, Yu-Tseng HSIEN, Ya Yun LIU
  • Patent number: 9390218
    Abstract: A method comprises generating a schematic of an integrated circuit (IC), the IC having a circuit component. The method also comprises searching a database having one or more configurations of the circuit component, each of the one or more configurations of the circuit component having a corresponding estimated resistance capacitance (RC) value and an assigned color scheme based on the estimated RC value. The method further comprises displaying the circuit component in the schematic as a symbol representing the circuit component, the symbol representing the circuit component being displayed having the assigned color scheme of a selected circuit component configuration. The method additionally comprises displaying a layout of the IC based on a determination that the schematic passed a design rule check, the displayed layout of the IC including the selected configuration of the circuit component, the selected configuration being displayed in the layout having the assigned color scheme.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: July 12, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hui Yu Lee, Chi-Wen Chang, Yu-Tseng Hsien, Ya Yun Liu
  • Publication number: 20150254389
    Abstract: A method comprises generating a schematic of an integrated circuit (IC), the IC having a circuit component. The method also comprises searching a database having one or more configurations of the circuit component, each of the one or more configurations of the circuit component having a corresponding estimated resistance capacitance (RC) value and an assigned color scheme based on the estimated RC value. The method further comprises displaying the circuit component in the schematic as a symbol representing the circuit component, the symbol representing the circuit component being displayed having the assigned color scheme of a selected circuit component configuration. The method additionally comprises displaying a layout of the IC based on a determination that the schematic passed a design rule check, the displayed layout of the IC including the selected configuration of the circuit component, the selected configuration being displayed in the layout having the assigned color scheme.
    Type: Application
    Filed: March 10, 2014
    Publication date: September 10, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hui Yu LEE, Chi-Wen CHANG, Yu-Tseng HSIEN, Ya Yun LIU