Patents by Inventor Yu-Tuan Tsai

Yu-Tuan Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strained-silicon transistor and method of making the same
    Patent number: 8692332
    Abstract: A structure of a strained-silicon transistor includes a PMOS disposed on a substrate, a silicon nitride layer positioned on the PMOS, and a compressive stress film disposed on the silicon nitride layer, wherein the silicon nitride has a stress between ?0.1 Gpa and ?3.2 Gpa, and the stress of the silicon nitride is smaller than the stress of the compressive stress layer.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: April 8, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Jei-Ming Chen, Hsiu-Lien Liao, Yu-Tuan Tsai, Teng-Chun Tsai
  • STRAINED-SILICON TRANSISTOR AND METHOD OF MAKING THE SAME
    Publication number: 20110169095
    Abstract: A structure of a strained-silicon transistor includes a PMOS disposed on a substrate, a silicon nitride layer positioned on the PMOS, and a compressive stress film disposed on the silicon nitride layer, wherein the silicon nitride has a stress between ?0.1 Gpa and ?3.2 Gpa, and the stress of the silicon nitride is smaller than the stress of the compressive stress layer.
    Type: Application
    Filed: January 14, 2010
    Publication date: July 14, 2011
    Inventors: Jei-Ming Chen, Hsiu-Lien Liao, Yu-Tuan Tsai, Teng-Chun Tsai
  • METHOD FOR FORMING SUPERHIGH STRESS LAYER
    Publication number: 20100304042
    Abstract: A method for forming super high stress layer is provided. First, a substrate is provided. Second, an ammonia-related pretreatment is performed on the substrate. The flow rate of ammonia is not less than s.c.c.m. and the high-frequency source power is set to be not less than 800 W. Later, the super high stress layer is formed on the substrate having undergone the ammonia-related pretreatment.
    Type: Application
    Filed: May 31, 2009
    Publication date: December 2, 2010
    Inventors: Hsiu-Lien Liao, Teng-Chun Tsai, Jei-Ming Chen, Yu-Tuan Tsai, Chien-Chung Huang