Patents by Inventor Yu-Tzu HSIEH

Yu-Tzu HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-type metal oxide semiconductor material and method for fabricating the same
    Patent number: 9224599
    Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1?3)Ga(1?b)Zn(1+a+b)O4, wherein 0?a?0.1, 0?b?0.1, and 0<a+b?0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm?3 and 5×1018 cm?3.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: December 29, 2015
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shan-Haw Chiou, Tzu-Chi Chou, Chiung-Hui Huang, Yu-Tzu Hsieh
  • P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND METHOD FOR FABRICATING THE SAME
    Publication number: 20150187573
    Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1?3)Ga(1?b)Zn(1+a+b)O4, wherein 0?a?0.1, 0?b?0.1, and 0<a+b?0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm?3 and 5×1018 cm?3.
    Type: Application
    Filed: December 19, 2014
    Publication date: July 2, 2015
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shan-Haw CHIOU, Tzu-Chi CHOU, Chiung-Hui HUANG, Yu-Tzu HSIEH