Abstract: A method for evaluating a quartz glass crucible constituted by an outer layer formed of an opaque quartz glass containing a bubble, and an inner layer formed of a transparent quartz glass. The method includes steps of preparing a quartz glass crucible to be evaluated, irradiating the quartz glass crucible to be evaluated with ultraviolet rays as an excitation light, detecting a blue fluorescence emitted from the quartz glass crucible irradiated with the ultraviolet rays, and evaluating a state of oxygen deficiency defects in the outer layer of the quartz glass crucible on the basis of existence or non-existence of the blue fluorescence. The method allows hydrogen doping and water vapor introduction to attain nondestructive and easy evaluation on the state of the oxygen deficiency defects generated in the quartz glass crucible.

Abstract: The abnormal sound diagnostic system of the present disclosure includes an abnormal sound diagnostic system including a diagnostic device for diagnosing abnormal sound generated in a vehicle based on data of sound emitted from a vehicle and inquiry information about abnormal sound generated in a vehicle, the abnormal sound diagnostic system including an calculation processing unit for acquiring a spectrogram indicating a relationship between time, frequency, and sound pressure from the sound data, a voice recognition unit for extracting a vocal time zone that is a time zone including a human voice from the sound data by speech recognition, a display unit for displaying a spectrogram, and a display control unit for causing the display unit to display a spectrogram so that the vocal time zone extracted by the voice recognition unit is visually distinguished from a time zone that does not include a human voice.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, where each of the memory opening fill structures contains a memory film and a vertical semiconductor channel that extend vertically, and each memory film includes a crystalline blocking dielectric metal oxide layer, and a metal oxide amorphous dielectric nucleation layer located between each of the vertically neighboring electrically conductive layers and insulating layers, and located between each of the crystalline blocking dielectric metal oxide layers and each of the electrically conductive layers.

Abstract: In a case where input of data of a part of a plurality of items needed for a diagnosis is received, an item of which data is to be input next is changed based on the received data, so that an item that can efficiently reduce the candidates for the cause of the abnormal sound can be used as the item of which the data is to be input next, according to the received data. As a result, the candidates for the cause of the abnormal sound are efficiently narrowed down, and the number of man-hours needed to specify the cause of the abnormal sound can be reduced.

Abstract: An abnormal sound diagnosis system includes a sound acquisition unit configured to acquire data of a sound generated from an object, an inquiry information acquisition unit configured to acquire inquiry information regarding an abnormal sound generated in the object, an arithmetic processing unit configured to acquire a spectrogram indicating a relationship among a time, a frequency, and sound pressure from the data of the sound, an extraction unit configured to acquire, based on the inquiry information acquired by the inquiry information acquisition unit, an inferred frequency range of the abnormal sound generated in the object and extract an extracted range corresponding the inferred frequency range of the spectrogram acquired by the arithmetic processing unit, and a diagnosis unit configured to diagnose, based on the extracted range of the spectrogram extracted by the extraction unit, a cause of the abnormal sound generated in the object.

Abstract: An abnormal sound specifying device may include an arithmetic device configured to access a learned model of artificial intelligence and an output device. The arithmetic device may perform: specifying frequency-time data of sound recorded at a vehicle; causing the learned model to specify a type of abnormal sound included in the sound based on the frequency-time data and causing the learnt model to specify a basis range from the frequency-time data, the basis range indicating a frequency range and a time range that are used to specify the type of the abnormal sound; designating a designated range indicating frequency and time ranges; and determining whether to cause the output device to output the type of the abnormal sound in a determination process, the determination process including, as a determination element, at least a determination on whether the basis range and the designated range overlap each other.

Abstract: A sound source estimation system includes a microphone that detects sound which is generated from an object including a rotary device, a rotation speed acquiring unit that acquires a rotation speed of the rotary device, a frequency analyzing unit that generates frequency sound data indicating change of a frequency spectrum of sound detected by the microphone, a degree calculating unit that calculates a degree based on a loudest sound frequency indicating loudest sound out of frequencies of the sound and the rotation speed, and a degree comparing unit that determines a component with a degree closest to the degree as a sound source candidate of the noise.

Abstract: An abnormal sound identification device includes an arithmetic device and an output device. The arithmetic device is configured to identify frequency-time data recorded in a vehicle, specify a first time range and a second time range in the frequency-time data, input the frequency-time data to the trained model to cause the trained model to identify an abnormal sound generated in the first time range as a first abnormal sound based on the input frequency-time data and cause the trained model to identify an abnormal sound generated in the second time range as a second abnormal sound, and cause the output device to output a kind of the first abnormal sound with the kind not matching a kind of the second abnormal sound among the first abnormal sounds.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, where each of the memory opening fill structures contains a memory film and a vertical semiconductor channel that extend vertically, and each memory film includes a crystalline blocking dielectric metal oxide layer, and a metal oxide amorphous dielectric nucleation layer located between each of the vertically neighboring electrically conductive layers and insulating layers, and located between each of the crystalline blocking dielectric metal oxide layers and each of the electrically conductive layers.

Abstract: A sound source estimation system includes a microphone that detects sound which is generated from an object including a rotary device, a rotation speed acquiring unit that acquires a rotation speed of the rotary device, a frequency analyzing unit that generates frequency sound data indicating change of a frequency spectrum of sound detected by the microphone, a degree calculating unit that calculates a degree based on a loudest sound frequency indicating loudest sound out of frequencies of the sound and the rotation speed, and a degree comparing unit that determines a component with a degree closest to the degree as a sound source candidate of the noise.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, where each of the memory opening fill structures contains a memory film and a vertical semiconductor channel that extend vertically, and each memory film includes a crystalline blocking dielectric metal oxide layer, and a metal oxide amorphous dielectric nucleation layer located between each of the vertically neighboring electrically conductive layers and insulating layers, and located between each of the crystalline blocking dielectric metal oxide layers and each of the electrically conductive layers.

Abstract: According to one embodiment, a medical image diagnostic apparatus includes a gantry, a couch, a movable base, a screen, a reflecting plate, and a support body. The gantry has a bore formed therein and performs medical imaging. The couch is configured to move the table top along the central axis of the bore. The movable base is provided independently of the table top so as to be movable along the central axis of the bore. The screen is provided on the movable base. An image from a projector is projected on the screen. The reflecting plate reflects the image projected on the screen. The support body is provided on the movable base and supports the reflecting plate.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and a memory stack structure extending through the alternating stack. The memory stack structure includes a composite charge storage structure, a tunneling dielectric layer, and a vertical semiconductor channel. The composite charge storage structure may include a vertical stack of tubular charge storage material portions including a first charge trapping material located at levels of the electrically conductive layers, and a charge storage layer including a second charge trapping material extending through a plurality of electrically conductive layers of the electrically conductive layers. The first charge trapping material has a higher charge trap density than the second charge trapping material. Alternatively, the composite charge storage material portions may include discrete charge storage elements each containing a silicon nitride portion and a silicon carbide nitride liner.

Abstract: A medical image diagnosis system according to one embodiment includes a gantry, a couch, a reflecting plate, and a processing circuitry. The gantry is for medical imaging having a bore. The couch movably supports a top plate. The reflecting plate reflects an image output from an image output device. The processing circuitry, in a first case where the image is shown to an observer not through the reflecting plate, outputs a first image signal relating to a first image to the image output device. While in a second case where the image is shown to the observer through the reflecting plate, The processing circuitry outputs a second image signal relating to a second image to the image output device.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and a memory stack structure extending through the alternating stack. The memory stack structure includes a composite charge storage structure, a tunneling dielectric layer, and a vertical semiconductor channel. The composite charge storage structure may include a vertical stack of tubular charge storage material portions including a first charge trapping material located at levels of the electrically conductive layers, and a charge storage layer including a second charge trapping material extending through a plurality of electrically conductive layers of the electrically conductive layers. The first charge trapping material has a higher charge trap density than the second charge trapping material. Alternatively, the composite charge storage material portions may include discrete charge storage elements each containing a silicon nitride portion and a silicon carbide nitride liner.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, where each of the memory opening fill structures contains a memory film and a vertical semiconductor channel that extend vertically, and each memory film includes a crystalline blocking dielectric metal oxide layer, and a metal oxide amorphous dielectric nucleation layer located between each of the vertically neighboring electrically conductive layers and insulating layers, and located between each of the crystalline blocking dielectric metal oxide layers and each of the electrically conductive layers.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures are formed through the alternating stack. Each of the memory stack structures includes respective charge storage elements and a respective vertical semiconductor channel contacting an inner sidewall of the respective charge storage elements. The sacrificial material layers are replaced with electrically conductive layers. A polycrystalline aluminum oxide blocking dielectric layer is provided between each charge storage element and a neighboring one of the electrically conductive layers. The polycrystalline aluminum oxide blocking dielectric layer is formed by: depositing an amorphous aluminum oxide layer, converting the amorphous aluminum oxide layer into an in-process polycrystalline aluminum oxide blocking dielectric layer, and by thinning the in-process polycrystalline aluminum oxide blocking dielectric layer.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures are formed through the alternating stack. Each of the memory stack structures includes respective charge storage elements and a respective vertical semiconductor channel contacting an inner sidewall of the respective charge storage elements. The sacrificial material layers are replaced with electrically conductive layers. A polycrystalline aluminum oxide blocking dielectric layer is provided between each charge storage element and a neighboring one of the electrically conductive layers. The polycrystalline aluminum oxide blocking dielectric layer is formed by: depositing an amorphous aluminum oxide layer, converting the amorphous aluminum oxide layer into an in-process polycrystalline aluminum oxide blocking dielectric layer, and by thinning the in-process polycrystalline aluminum oxide blocking dielectric layer.

Abstract: A first field effect transistor and a second field effect transistor are formed on a substrate. A silicon nitride liner is formed over the first field effect transistor and the second field effect transistor. An upper portion of the silicon nitride liner is converted into a thermal silicon oxide liner. A lower portion of the silicon nitride liner remains as a silicon nitride material portion. A first portion of the thermal silicon oxide liner is removed from above the second field effect transistor, and a second portion of the thermal silicon oxide liner remains above the first field effect transistor. Selective presence of the silicon oxide liner provides differential stress within the channels of the first and second field effect transistors, which can be employed to optimize performance of different types of field effect transistors.

Abstract: A gradient coil unit includes a tubular gradient coil and support structures. The tubular gradient coil is configured to apply a gradient magnetic field to an imaging region of magnetic resonance imaging. The support structures are fixed to plural positions of the gradient coil. The support structures are configured to hold the gradient coil on a tubular magnet by applying pressing forces on positions of an edge inside a wall forming the magnet. The pressing forces each has a component in a central axis direction of the magnet. Further, according to another embodiment, a magnetic resonance imaging apparatus includes the above mentioned gradient coil unit, a static field magnet and at least one radio frequency coil configured to perform magnetic resonance imaging of an object.