Abstract: An integrated circuit device includes an interconnect layer, a memory structure, a third conductive feature, and a fourth conductive feature. The interconnect layer includes a first conductive feature and a second conductive feature. The memory structure is over and in contact with the first conductive feature. The memory structure includes at least a resistance switching element over the first conductive feature. The third conductive feature, including a first conductive line, is over and in contact with the second conductive feature. The fourth conductive feature is over and in contact with the memory structure. The fourth conductive feature includes a second conductive line, a top surface of the first conductive line is substantially level with a top surface of the second conductive line, and a bottom surface of the first conductive line is lower than a bottommost portion of a bottom surface of the second conductive line.

Abstract: Various embodiments of the present application are directed towards an integrated chip comprising memory cells separated by a void-free dielectric structure. In some embodiments, a pair of memory cell structures is formed on a via dielectric layer, where the memory cell structures are separated by an inter-cell area. An inter-cell filler layer is formed covering the memory cell structures and the via dielectric layer, and further filling the inter-cell area. The inter-cell filler layer is recessed until a top surface of the inter-cell filler layer is below a top surface of the pair of memory cell structures and the inter-cell area is partially cleared. An interconnect dielectric layer is formed covering the memory cell structures and the inter-cell filler layer, and further filling a cleared portion of the inter-cell area.

Abstract: An IC structure includes a transistor, a source/drain contact, a metal oxide layer, a non-metal oxide layer, a barrier structure, and a via. The transistor includes a gate structure and source/drain regions on opposite sides of the gate structure. The source/drain contact is over one of the source/drain regions. The metal oxide layer is over the source/drain contact. The non-metal oxide layer is over the metal oxide layer. The barrier structure is over the source/drain contact. The barrier structure forms a first interface with the metal oxide layer and a second interface with the non-metal oxide layer, and the second interface is laterally offset from the first interface. The via extends through the non-metal oxide layer to the barrier structure.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: A development system and a method of an offline software-in-the-loop simulation are disclosed. A common firmware architecture generates a chip control program. The common firmware architecture has an application layer and a hardware abstraction layer. The application layer has a configuration header file and a product program. A processing program required by a peripheral module is added to the hardware abstraction layer during compiling. The chip control program is provided to a controller chip or a circuit simulation software to be executed to control the product-related circuit through controlling the peripheral module.

Abstract: In some embodiments, a semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A torque capacity expandable device and method for a torque multiplier are introduced. The device includes a connection sleeve and a torque multiplier. The connection sleeve, fitted to a torque wrench and the torque multiplier and fastened, has a force-applied end corresponding in dimensions to a force-applying end of the torque wrench and has another end corresponding in dimensions to the force-applied end of the torque multiplier. An integral fastening mechanism is integrally fitted to or formed with each of the two ends of the torque multiplier. Its force-applied end fastening mechanism has the same dimensions as the force-applying end fastening mechanism of connection sleeve. Its force-applying end fastening mechanism has the same dimensions as the force-applied end fastening mechanism of a reaction arm disposed at the force-applying end fastening mechanism of torque multiplier.

Abstract: A torque capacity expandable device and method for a torque multiplier are introduced. The device includes a connection sleeve and a torque multiplier. The connection sleeve, fitted to a torque wrench and the torque multiplier and fastened, has a force-applied end corresponding in dimensions to a force-applying end of the torque wrench and has another end corresponding in dimensions to the force-applied end of the torque multiplier. An integral fastening mechanism is integrally fitted to or formed with each of the two ends of the torque multiplier. Its force-applied end fastening mechanism has the same dimensions as the force-applying end fastening mechanism of connection sleeve. Its force-applying end fastening mechanism has the same dimensions as the force-applied end fastening mechanism of a reaction arm disposed at the force-applying end fastening mechanism of torque multiplier.

Abstract: A bolt clamping force transducer for a bolt tightening operation is introduced to tighten a bolted joint by driving a torque rotating shaft in a clamping force transducer, such that a helical mechanism at one end of the torque rotating shaft generates an axial force for pressing a force sensing module and thus generates a strain value thereof. A socket is driven by the other end of the torque rotating shaft, thereby generating a clamping force under which the bolted joint of a specific specification is tightened. A parameter relation between the strain value and the clamping force is calibrated with a standard axial force gauge to facilitate calculation and control of the clamping force during the tightening process where the bolted joint fitted to any torque tool is sensed to control the precision of the clamping force being exerted on the bolted joint, thereby enhancing the quality thereof.

Abstract: A bolt clamping force transducer for a bolt tightening operation is introduced to tighten a bolted joint by driving a torque rotating shaft in a clamping force transducer, such that a helical mechanism at one end of the torque rotating shaft generates an axial force for pressing a force sensing module and thus generates a strain value thereof. A socket is driven by the other end of the torque rotating shaft, thereby generating a clamping force under which the bolted joint of a specific specification is tightened. A parameter relation between the strain value and the clamping force is calibrated with a standard axial force gauge to facilitate calculation and control of the clamping force during the tightening process where the bolted joint fitted to any torque tool is sensed to control the precision of the clamping force being exerted on the bolted joint, thereby enhancing the quality thereof.

Abstract: A bolt clamping force sensing washer includes a sensing washer, connection line assembly, and signal processor. The sensing washer includes a body, sensing component, and bushing. The body has an axial hole that matches outer diameter of a bolt's thread. The circumferential surface of the body has a circumferential groove for receiving the sensing component which measures a deformation signal generated by the body under an axial load. Two end surfaces of the body are perpendicular to the axial hole and each have a loosening-proof structure. The bushing is made of metal or plastic or formed by plastic insulating material casting to enclose the sensing component. The signal processor has a signal amplifier, microprocessor, pairing switch, power circuit unit, signal transmission unit, memory unit, RF antenna and alert unit. The connection line assembly is disposed at the bushing to electrically connect the sensing component and signal processor.

Abstract: A bolt clamping force sensing washer includes a sensing washer, connection line assembly, and signal processor. The sensing washer includes a body, sensing component, and bushing. The body has an axial hole that matches outer diameter of a bolt's thread. The circumferential surface of the body has a circumferential groove for receiving the sensing component which measures a deformation signal generated by the body under an axial load. Two end surfaces of the body are perpendicular to the axial hole and each have a loosening-proof structure. The bushing is made of metal or plastic or formed by plastic insulating material casting to enclose the sensing component. The signal processor has a signal amplifier, microprocessor, pairing switch, power circuit unit, signal transmission unit, memory unit, RF antenna and alert unit. The connection line assembly is disposed at the bushing to electrically connect the sensing component and signal processor.

Abstract: In a torque control system and method for power impact torque tool, first establish a curve showing the relationship between the high/low working voltages of the tool in normal operation and the high/low torque values that are correspondingly output by the tool at the high/low working voltages. Input a target torque value that falls between the highest and the lowest torque value on the relationship curve to obtain a working voltage corresponding to the target torque value for performing a tightening operation. During the tightening process, a microprocessor of a torque control device receives and uses sensing signals instantly and continuously sent by a torque sensing device and changes in voltage, current and motor temperature continuously detected by a voltage/current sensing element and a temperature sensing element to stably control, via a voltage control module, the working voltage within a preset allowable range of variation for tightening torque control.

Abstract: The present invention relates to a method for avoidance of blue light damage by using a stem cell composition. The stem cell composition comprises 10% (v/v) to 50% (v/v) of the conditioned medium of Wharton's Jelly mesenchymal stem cells. The conditioned medium of Wharton's Jelly mesenchymal stem cells is prepared by culturing Wharton's Jelly mesenchymal stem cells in a medium containing human basic fibroblast growth factors for 2 to 5 days, and collecting the medium for centrifugation and filtration.

Abstract: The rotary torque boosting device includes a main body with an inertia flange to be assembled or made as one piece structure with the main body, an input member having an input recess for receiving the anvil of the impact wrench, an output recess for receiving a detachable driving anvil made to accommodate the impact socket with the same driving head type and dimension which to be secured with a retaining device for easy replacement, such as a magnet unit adhered at the bottom of the recess or an inner retaining groove by the side for receiving the ball retainer or a retaining ring on the driving anvil. The rotary torque boosting device will solve the drawback of the prior art especially the driving anvil will not be held durable enough under the magnified torque induced by the inertia effect during operation.

Abstract: In a torque control system and method for power impact torque tool, first establish a curve showing the relationship between the high/low working voltages of the tool in normal operation and the high/low torque values that are correspondingly output by the tool at the high/low working voltages. Input a target torque value that falls between the highest and the lowest torque value on the relationship curve to obtain a working voltage corresponding to the target torque value for performing a tightening operation. During the tightening process, a microprocessor of a torque control device receives and uses sensing signals instantly and continuously sent by a torque sensing device and changes in voltage, current and motor temperature continuously detected by a voltage/current sensing element and a temperature sensing element to stably control, via a voltage control module, the working voltage within a preset allowable range of variation for tightening torque control.