Abstract: A semiconductor structure includes a composite redistribution structure, a first interconnect device and an integrated circuit (IC) package component. The composite redistribution structure includes a first redistribution structure, a second redistribution structure and a third redistribution structure. The second redistribution structure is located between the first redistribution structure and the third redistribution structure. The first interconnect device is embedded in the second redistribution structure. The first interconnect device includes a plurality of metal connectors leveled with a surface of the second redistribution structure and electrically connected to the third redistribution structure. The IC package component is disposed over the third redistribution structure and electrically connected to the first interconnect device via the third redistribution structure.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.

Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.

Abstract: Polymer spheres are fabricated. Dispersing polymerization and a two-stage swelling procedure are processed. The polymer spheres fabricated have uniform granular sizes and are highly cross-linking. Thus, the polymer spheres are heat-resistant and solvent-resistant.

Abstract: Polymer spheres are fabricated. Dispersing polymerization and a two-stage swelling procedure are processed. The polymer spheres fabricated have uniform granular sizes and are highly cross-linking. Thus, the polymer spheres are heat-resistant and solvent-resistant.