Abstract: A frequency calibration (FCAL) circuit and a method for calibrating an oscillation frequency of a controllable oscillator are provided. The FCAL circuit includes the controllable oscillator, a divider, a time-to-digital converter (TDC) and a calibration logic. The controllable oscillator generates a controllable oscillation clock according to a calibration code. The divider divides the oscillation frequency of the controllable oscillation clock by a predetermined divisor to generate a divided clock. The TDC converts a first period between first edges of a reference clock and the divided clock into a first period code and converts a second period between second edges of the reference clock and the divided clock into a second period code. The calibration logic compares the first period code and the second period code to generate a comparison result for determining whether the first period is greater or less than the second period, and accordingly controls the calibration code.

Abstract: Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.

Abstract: Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.