Patents by Inventor Yu-Wei Kuo
Yu-Wei Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20210249561Abstract: A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 ?m; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 ?m.Type: ApplicationFiled: February 19, 2021Publication date: August 12, 2021Inventors: Chien Cheng HUANG, Kuo-Wei YEN, Yu-Wei KUO, Yao-Wei YANG, Pei-Hsiang TSENG
-
Patent number: 11075087Abstract: A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.Type: GrantFiled: October 25, 2019Date of Patent: July 27, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chi Lin, Chin-Hsing Lin, Hung Jui Chang, Yi-Wei Chiu, Yu-Wei Kuo, Yu Lun Ke
-
Patent number: 10930818Abstract: A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; and a current blocking (CB) layer disposed on the first surface; a transparent conductive layer disposed on or above the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a sidewall of the CB layer comprises a first surface section and a second surface section having different slopes.Type: GrantFiled: July 6, 2018Date of Patent: February 23, 2021Assignee: EPISTAR CORPORATIONInventors: Chien Cheng Huang, Kuo-Wei Yen, Yu-Wei Kuo, Yao-Wei Yang, Pei-Hsiang Tseng
-
Publication number: 20200328113Abstract: A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.Type: ApplicationFiled: June 25, 2020Publication date: October 15, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Allen Ke, Yi-Wei CHIU, Hung Jui CHANG, Yu-Wei KUO
-
Patent number: 10707123Abstract: A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.Type: GrantFiled: October 5, 2017Date of Patent: July 7, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Allen Ke, Yi-Wei Chiu, Hung Jui Chang, Yu-Wei Kuo
-
Publication number: 20200058513Abstract: A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.Type: ApplicationFiled: October 25, 2019Publication date: February 20, 2020Inventors: Yu-Chi Lin, Chin-Hsing Lin, Hung Jui Chang, Yi-Wei Chiu, Yu-Wei Kuo, Yu Lun Ke
-
Publication number: 20200043740Abstract: A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.Type: ApplicationFiled: October 7, 2019Publication date: February 6, 2020Inventors: Yu-Chi Lin, Chin-Hsing Lin, Hung Jui Chang, Yi-Wei Chiu, Yu-Wei Kuo, Yu Lun Ke
-
Patent number: 10504738Abstract: A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.Type: GrantFiled: April 30, 2018Date of Patent: December 10, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chi Lin, Chin-Hsing Lin, Hung Jui Chang, Yi-Wei Chiu, Yu-Wei Kuo, Yu-Lun Ke
-
Publication number: 20190333784Abstract: A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.Type: ApplicationFiled: April 30, 2018Publication date: October 31, 2019Inventors: Yu-Chi Lin, Chin-Hsing Lin, Hung Jui Chang, Yi-Wei Chiu, Yu-Wei Kuo, Yu-Lun Ke
-
Publication number: 20190096754Abstract: A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.Type: ApplicationFiled: November 28, 2018Publication date: March 28, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Allen KE, Yi-Wei CHIU, Hung Jui CHANG, Yu-Wei KUO
-
Publication number: 20180315648Abstract: A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.Type: ApplicationFiled: October 5, 2017Publication date: November 1, 2018Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Allen KE, Yi-Wei Chiu, Hung Jui Chang, Yu-Wei Kuo
-
Publication number: 20180315888Abstract: A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; and a current blocking (CB) layer disposed on the first surface; a transparent conductive layer disposed on or above the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a sidewall of the CB layer comprises a first surface section and a second surface section having different slopes.Type: ApplicationFiled: July 6, 2018Publication date: November 1, 2018Inventors: CHIEN CHENG HUANG, KUO-WEI YEN, YU-WEI KUO, YAO-WEI YANG, PEI-HSIANG TSENG
-
Patent number: 10043945Abstract: A method for fabricating a light emitting device, comprising: forming a plurality of light emitting stacked layers above a substrate; forming and patterning a current blocking (CB) layer on the light emitting stacked layers; forming a transparent conductive layer covering the light emitting stacked layers and the current blocking layer; etching the transparent conductive layer and exposing a reserved region for a first pad electrode and a mesa structure, respectively; and etching an exposed portion of the light emitting stacked layers and a portion of the current blocking layer to form a remaining current blocking layer, the mesa structure and a first opening.Type: GrantFiled: June 18, 2017Date of Patent: August 7, 2018Assignee: EPISTAR CORPORATIONInventors: Chien Cheng Huang, Kuo-Wei Yen, Yu-Wei Kuo, Yao-Wei Yang, Pei-Hsiang Tseng
-
Publication number: 20170294558Abstract: A method for fabricating a light emitting device, comprising: forming a plurality of light emitting stacked layers above a substrate; forming and patterning a current blocking (CB) layer on the light emitting stacked layers; forming a transparent conductive layer covering the light emitting stacked layers and the current blocking layer; etching the transparent conductive layer and exposing a reserved region for a first pad electrode and a mesa structure, respectively; and etching an exposed portion of the light emitting stacked layers and a portion of the current blocking layer to form a remaining current blocking layer, the mesa structure and a first opening.Type: ApplicationFiled: June 18, 2017Publication date: October 12, 2017Inventors: CHIEN CHENG HUANG, KUO-WEI YEN, YU-WEI KUO, YAO-WEI YANG, PEI-HSIANG TSENG
-
Patent number: 9705035Abstract: A light emitting device, includes a substrate; a plurality of light emitting stacked layers, comprising a first surface and a second surface; a mesa structure; a current blocking (CB) layer; a transparent conductive layer; a first pad electrode and a second pad electrode; and a passivation layer, wherein the second surface is electrically opposite to the first surface, the transparent conductive layer is disposed on or above the first surface, the first pad electrode is disposed on the transparent conductive layer and on the first surface, and the second pad electrode is disposed on the second surface and on the mesa structure, the CB layer is disposed on the first surface, surrounded by the transparent conductive layer, and at a lower region of the first pad electrode, a portion of the first pad electrode is filling a first opening of the transparent conductive layer and the CB layer.Type: GrantFiled: December 30, 2015Date of Patent: July 11, 2017Assignee: Epistar CorporationInventors: Chien Cheng Huang, Kuo-Wei Yen, Yu-Wei Kuo, Yao-Wei Yang, Pei-Hsiang Tseng
-
Publication number: 20170194531Abstract: A light emitting device, includes a substrate; a plurality of light emitting stacked layers, comprising a first surface and a second surface; a mesa structure; a current blocking (CB) layer; a transparent conductive layer; a first pad electrode and a second pad electrode; and a passivation layer, wherein the second surface is electrically opposite to the first surface, the transparent conductive layer is disposed on or above the first surface, the first pad electrode is disposed on the transparent conductive layer and on the first surface, and the second pad electrode is disposed on the second surface and on the mesa structure, the CB layer is disposed on the first surface, surrounded by the transparent conductive layer, and at a lower region of the first pad electrode, a portion of the first pad electrode is filling a first opening of the transparent conductive layer and the CB layer.Type: ApplicationFiled: December 30, 2015Publication date: July 6, 2017Inventors: CHIEN CHENG HUANG, KUO-WEI YEN, YU-WEI KUO, YAO-WEI YANG, PEI-HSIANG TSENG
-
Publication number: 20140174522Abstract: An embodiment of the present invention provides a solar cell. The solar cell includes a semiconductor substrate, a plurality of finger electrodes, and a plurality of bus electrodes. The finger electrodes are disposed on a surface of the semiconductor substrate. The bus electrodes are disposed on the surface of the semiconductor substrate separately. At least one of the bus electrodes includes a plurality of branch electrodes, and the branch electrodes are disposed on the surface of the semiconductor substrate in parallel. An outer side of each of the branch electrodes is connected to at least one of the finger electrodes. This embodiment may help reduce the cost for manufacturing the solar cell.Type: ApplicationFiled: March 15, 2013Publication date: June 26, 2014Applicant: SOLARTECH ENERGY CORP.Inventors: Di-Wei Yang, Yu-Wei Kuo, Chung-Wen Lan