Abstract: A method of forming a three-dimensional (3D) memory device includes: forming, over a substrate, a layer stack having alternating layers of a first conductive material and a first dielectric material; forming trenches extending vertically through the layer stack from an upper surface of the layer stack distal from the substrate to a lower surface of the layer stack facing the substrate; lining sidewalls and bottoms of the trenches with a memory film; forming a channel material over the memory film, the channel material including an amorphous material; filling the trenches with a second dielectric material after forming the channel material; forming memory cell isolation regions in the second dielectric material; forming source lines (SLs) and bit lines (BLs) that extend vertically in the second dielectric material on opposing sides of the memory cell isolation regions; and crystallizing first portions of the channel material after forming the SLs and BLs.

Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: An operation method of an electronic system includes the following steps. When a first communication module of the electronic device receives a call signal, a controller of an electronic device detects whether an expansion device is electrically connected to the electronic device. Based on a result of the controller detecting whether the expansion device is electrically connected to the electronic device, it is determined whether the electronic system performs sound amplification with a first speaker of the electronic device or performs playing with a second speaker of the expansion device.

Abstract: A communication device includes a first body, a second body, a first audio module, and a second audio module. The second body is rotatably connected to the first body. The first audio module is disposed on the first body. The second audio module is at least partially disposed on the first body. When the second body rotates relatively to the first body to be in a first state to switch the communication device to be in a first operation mode, at least a portion of the first audio module is turned on, and the second audio module is turned off. When the second body rotates relatively to the first body to be in a second state to switch the communication device to be in a second operation mode, the first audio module is turned off, and the second audio module is turned on.

Abstract: A communication device includes a first body, a second body, a first audio module, and a second audio module. The second body is rotatably connected to the first body. The first audio module is disposed on the first body. The second audio module is at least partially disposed on the first body. When the second body rotates relatively to the first body to be in a first state to switch the communication device to be in a first operation mode, at least a portion of the first audio module is turned on, and the second audio module is turned off. When the second body rotates relatively to the first body to be in a second state to switch the communication device to be in a second operation mode, the first audio module is turned off, and the second audio module is turned on.

Abstract: An operation method of an electronic system includes the following steps. When a first communication module of the electronic device receives a call signal, a controller of an electronic device detects whether an expansion device is electrically connected to the electronic device. Based on a result of the controller detecting whether the expansion device is electrically connected to the electronic device, it is determined whether the electronic system performs sound amplification with a first speaker of the electronic device or performs playing with a second speaker of the expansion device.