Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: A display device including at least two light source modules and a display control substrate is provided. Each of the at least two light source substrates has a first surface and a second surface opposite to each other and includes a plurality of light emitting elements and a plurality of connection pads. The light emitting elements are located on the second surface, and the connection pads are located on the first surface and are electrically connected to the light emitting elements. The display control substrate includes a back plate and a plurality of control elements. The control elements are located on the back plate, part of the control elements are electrically connected to the connection pads to drive and control the light emitting elements, and the second surface of each of the at least two light source substrates forms a part of a display surface of the display device.

Abstract: The present invention provides a palladium precatalyst for cross-coupling reaction, the palladium precatalyst comprising a structure represented by following formula 1: wherein, R1 and R2 are the same, and R1 and R2 are substituted or unsubstituted phenyl; R3 and R4 are the same, and R3 and R4 are substituted or unsubstituted phenyl or cyclohexyl.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: A semiconductor structure includes a composite redistribution structure, a first interconnect device and an integrated circuit (IC) package component. The composite redistribution structure includes a first redistribution structure, a second redistribution structure and a third redistribution structure. The second redistribution structure is located between the first redistribution structure and the third redistribution structure. The first interconnect device is embedded in the second redistribution structure. The first interconnect device includes a plurality of metal connectors leveled with a surface of the second redistribution structure and electrically connected to the third redistribution structure. The IC package component is disposed over the third redistribution structure and electrically connected to the first interconnect device via the third redistribution structure.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: A display system circuitry capable of saving power consumption includes a display panel and a driver circuitry. In particular, the display panel includes a plurality of source electrodes with a plurality of data lines and a plurality of gate electrodes further includes a gate driver which is directly incorporated into a thin film transistor array to form Gate on Array (GOA) electrode, a source electrode transmitting a plurality of data driving signals, a gate electrode transmitting gate driving signals, a VCOM electrode transmitting voltage driving signals, a display electrode transmitting displaying driving signals. The driver circuitry includes a display driver IC which includes a source driver operably configured to drive the source electrode and gate control to control gate driver output, and a touch driver IC configured to generate the touch scan signal from a touch sensor.

Abstract: The disclosure provides a screen anti-peeping protection layer arranged above a display panel. The screen anti-peeping protection layer includes a first polarizing layer, a second polarizing layer, a viewing angle adjusting layer and a touch sensing layer. The first polarizing layer and the second polarizing layer are sequentially arranged on a transmission path of a display beam which comes from the display panel. The viewing angle adjusting layer is arranged on the transmission path and located between the first polarizing layer and the second polarizing layer, and used for changing a range of an emitted light viewing angle of the display beam. The touch sensing layer is arranged on the transmission path, and located above the viewing angle adjusting layer and opposite to the first polarizing layer. The disclosure also provides a touch display device including the screen anti-peeping protection layer and the display panel as described above.

Abstract: A display system circuitry capable of saving power consumption includes a display panel and a driver circuitry. In particular, the display panel includes a plurality of source electrodes with a plurality of data lines and a plurality of gate electrodes further includes a gate driver which is directly incorporated into a thin film transistor array to form Gate on Array (GOA) electrode, a source electrode transmitting a plurality of data driving signals, a gate electrode transmitting gate driving signals, a VCOM electrode transmitting voltage driving signals, a display electrode transmitting displaying driving signals. The driver circuitry includes a display driver IC which includes a source driver operably configured to drive the source electrode and gate control to control gate driver output, and a touch driver IC configured to generate the touch scan signal from a touch sensor.

Abstract: The disclosure provides a screen anti-peeping protection layer arranged above a display panel. The screen anti-peeping protection layer includes a first polarizing layer, a second polarizing layer, a viewing angle adjusting layer and a touch sensing layer. The first polarizing layer and the second polarizing layer are sequentially arranged on a transmission path of a display beam which comes from the display panel. The viewing angle adjusting layer is arranged on the transmission path and located between the first polarizing layer and the second polarizing layer, and used for changing a range of an emitted light viewing angle of the display beam. The touch sensing layer is arranged on the transmission path, and located above the viewing angle adjusting layer and opposite to the first polarizing layer. The disclosure also provides a touch display device including the screen anti-peeping protection layer and the display panel as described above.

Abstract: A method for fabricating a semiconductor device is provided. A first polysilicon layer of a first conductivity type is provided on a substrate having first and second active regions. An ion implantation process is performed in the polysilicon layer corresponding to the second active region by using a dopant of a second conductivity type opposite to the first conductivity type, and silane plasma is introduced during the ion implantation process to form a second polysilicon layer thereon and convert the first conductivity type of the first polysilicon layer corresponding to the second active region to the second conductivity type. The first and second polysilicon layers are patterned to form a first gate layer corresponding to the first active region and a second gate layer corresponding to the second active region. A semiconductor device is also provided.

Abstract: The invention provides a yeast strain and a method for making the same. The method has the step of replacing the regulation region upstream of the hsp104 gene in the genome of the yeast, so as to accelerate and prolong the expression span of hsp104 gene and enhance the capability of the yeast to ferment and produce ethanol in a high-temperature environment. The yeast is capable of fermenting glucose at a temperature higher than 42° C. to produce ethanol, or biomass ethanol, wherein the ethanol production ratio based on fermentation of glucose is higher than 97%. Being able to synchronize the degradation/hydrolysis stage and fermentation stage of biomass ethanol producing process, the yeast in accordance with the present invention is able to lower the production cost of biomass ethanol and further raise the productivity with its high ethanol production ratio.

Abstract: The invention provides a yeast strain and a method for making the same. The method has the step of replacing the regulation region upstream of the hsp104 gene in the genome of the yeast, so as to accelerate and prolong the expression span of hsp104 gene and enhance the capability of the yeast to ferment and produce ethanol in a high-temperature environment. The yeast is capable of fermenting glucose at a temperature higher than 42° C. to produce ethanol, or biomass ethanol, wherein the ethanol production ratio based on fermentation of glucose is higher than 97%. Being able to synchronize the degradation/hydrolysis stage and fermentation stage of biomass ethanol producing process, the yeast in accordance with the present invention is able to lower the production cost of biomass ethanol and further raise the productivity with its high ethanol production ratio.

Abstract: A method for fabricating a semiconductor device is provided. A first polysilicon layer of a first conductivity type is provided on a substrate having first and second active regions. An ion implantation process is performed in the polysilicon layer corresponding to the second active region by using a dopant of a second conductivity type opposite to the first conductivity type, and silane plasma is introduced during the ion implantation process to form a second polysilicon layer thereon and convert the first conductivity type of the first polysilicon layer corresponding to the second active region to the second conductivity type. The first and second polysilicon layers are patterned to form a first gate layer corresponding to the first active region and a second gate layer corresponding to the second active region. A semiconductor device is also provided.

Abstract: A light source module including a back frame, a light guide plate (LGP), and at least one light emitting device is provided. The back frame has a baseboard. The LGP is disposed on the back frame, and has a first surface, a second surface opposite to the first surface, and a light incident surface, wherein the second surface faces toward the baseboard. The light emitting device is disposed beside the light incident surface. The light source module further includes a thermal insulating element, which is disposed between the baseboard and the second surface, and is located adjacent to the light incident surface.

Abstract: A light source module including a back frame, a light guide plate (LGP), and at least one light emitting device is provided. The back frame has a baseboard. The LGP is disposed on the back frame, and has a first surface, a second surface opposite to the first surface, and a light incident surface, wherein the second surface faces toward the baseboard. The light emitting device is disposed beside the light incident surface. The light source module further includes a thermal insulating element, which is disposed between the baseboard and the second surface, and is located adjacent to the light incident surface.