Abstract: An image sensor includes a first sensing unit. The first sensing unit includes a pair of photodiodes formed in a substrate and spaced by a deep trench isolation structure, an outer grid over the pair of photodiodes, a color filter filled in the outer grid, and an inner grid disposed in the color filter. The color filter overlaps the pair of photodiodes. The inner grid includes a first spacer, wherein the first spacer is rotated relative to the deep trench isolation structure.

Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

Abstract: The disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes a base pattern including a channel region and a drain region, a first semiconductor layer on the channel region of the base pattern, and a gate structure on the first semiconductor layer. The gate structure includes a first stack disposed on the first semiconductor layer and a second stack disposed on the first stack. The first stack includes a first sidewall adjacent to the drain region and a second sidewall opposite to the first sidewall in a first direction parallel to a top surface of the base pattern. The first sidewall is at a first distance from the second stack in the first direction, and the second sidewall is at a second distance from the second stack in the first direction. The first distance is greater than the second distance.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: One aspect of this description relates to a testing apparatus including an advance process control monitor (APCM) in a first wafer, a plurality of pads disposed over and coupled to the APCM. The plurality of pads are in a second wafer. The testing apparatus includes a testing unit disposed between the first wafer and the second wafer. The testing unit is coupled to the APCM. The testing unit includes a metal structure within a dielectric. The testing apparatus includes a plurality of through silicon vias (TSVs) extending in a first direction from the first wafer, through the dielectric of the testing unit, to the second wafer.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.

Abstract: A semiconductor device, including a substrate, a first source/drain region, a second source/drain region, and a gate structure, is provided. The substrate has an extra body portion and a fin protruding from a top surface of the substrate, wherein the fin spans the extra body portion. The first source/drain region and the second source/drain region are in the fin. The gate structure spans the fin, is located above the extra body portion, and is located between the first source/drain region and the second source/drain region.

Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: A dimmer interface circuit includes a buffer stage circuit and a PWM control circuit. The buffer stage circuit converts a dimming input signal to a dimming buffer signal. The buffer stage circuit includes: a power rail generation circuit, which generates a power rail according to the dimming input signal adaptively, so that the dimming input signal is between a high level voltage and a low level voltage of the power rail; and an amplification circuit, which receives the dimming input signal, to generate the dimming buffer signal. The power rail supplies electrical power to the amplification circuit, wherein the amplification circuit operates within a range between the high level voltage and the low level voltage. The PWM control circuit converts the dimming buffer signal to a PWM dimming signal, so as to adjust a brightness of an LED module.

Abstract: A dimmer interface circuit includes a buffer stage circuit and a PWM control circuit. The buffer stage circuit converts a dimming input signal to a dimming buffer signal. The buffer stage circuit includes: a power rail generation circuit, which generates a power rail according to the dimming input signal adaptively, so that the dimming input signal is between a high level voltage and a low level voltage of the power rail; and an amplification circuit, which receives the dimming input signal, to generate the dimming buffer signal. The power rail supplies electrical power to the amplification circuit, wherein the amplification circuit operates within a range between the high level voltage and the low level voltage. The PWM control circuit converts the dimming buffer signal to a PWM dimming signal, so as to adjust a brightness of an LED module.

Abstract: An output stage circuit for transmitting data via a bus includes a high side switch, a high side diode structure, a high side clamp circuit, a low side switch, and a low side diode structure. An impedance circuit of the bus is coupled between the high side switch and the low side switch, for generating a differential output signal according to high and low side output signals. A high side N-type region of the high side diode structure encompasses a high side P-type region thereof, and a low side N-type region of the low side diode structure encompasses a low side P-type region thereof. The high side clamp circuit is connected to the high side N-type region in series, for clamping a voltage of the high side N-type region to be not lower than a predetermined voltage, to prevent a parasitic PNP bipolar junction transistor from being turned ON.

Abstract: An output stage circuit for transmitting data via a bus includes a high side switch, a high side diode structure, a high side clamp circuit, a low side switch, and a low side diode structure. An impedance circuit of the bus is coupled between the high side switch and the low side switch, for generating a differential output signal according to high and low side output signals. A high side N-type region of the high side diode structure encompasses a high side P-type region thereof, and a low side N-type region of the low side diode structure encompasses a low side P-type region thereof. The high side clamp circuit is connected to the high side N-type region in series, for clamping a voltage of the high side N-type region to be not lower than a predetermined voltage, to prevent a parasitic PNP bipolar junction transistor from being turned ON.

Abstract: A oral irrigator device (10) for cleaning teeth, including a system (14) for producing a stream of liquid/air bursts and a nozzle (16) connected to the system, and through which the stream of liquid/air bursts are directed. The nozzle can include a guidance tip (26) including a base portion (30), a tip portion (28), and an orifice (31) through which the stream of liquid/air bursts exits at a flow output pattern, and a flow output pattern selection mechanism (90, 90?) connected to or positioned within the guidance tip. A flow output pattern selection mechanism can be configured to be selectively actuated and to vary, upon the actuation the flow output pattern between a first flow output pattern to at least a second flow output pattern.

Abstract: An oral care appliance comprises: a fluid delivery system for producing discrete fluid bursts by means of a pump (130), a regulator (132) regulating liquid in a pressurized liquid tank (134) delivered via a valve (140) through a fluid delivery path (123) in an outlet member (124), directed to a nozzle assembly (126) from which the resulting fluid bursts are directed to the teeth.

Abstract: The interproximal toothbrush includes an appliance body and neck with a nozzle member having a nozzle tip shaped to fit into interproximal teeth spaces. Bursts of air or air/liquid mixture are generated, exiting through the nozzle tip. A helix member or, alternatively, a spring, is supported within a channel in the nozzle member. The helix member is free to rotate as air or the air/liquid mixture is moved through the channel. A set of bristles is attached to a forward end of the helix member, so that it rotates with the helix member. Alternatively, a set of bristles is attached to the distal end of the spring so that successive bursts of air or the air/liquid mixture produce an in-and-out movement of the set of bristles toward and away from the teeth.

Abstract: The oral care appliance comprises: a fluid pump (46); a source of liquid (50); and a source of gas (12); wherein the pump is in operative communication with the sources of liquid and gas to produce a series of gas-injected fluid pulses and/or a jet fluid flow using liquid slugs in a selected sequence directed to a nozzle and from there to the teeth, and a control assembly for selecting pulse flow or slug flow with specific set times and sequence directed to a nozzle assembly (80) and from there to the teeth; wherein the pulses have a pulse width within the range of 0.001-0.5 seconds, a pulse height from 0.1-10 Newtons, a rise/fall time range of 0.5-250 ms, a repetition rate in the range of 2 Hz to 20 Hz, and wherein the gas/liquid mixture range from 40-95% volume to volume gas to liquid, or wherein the fluid slugs in the jet flow have a volume in the range of 0.05-0.5 ml per orifice, a diameter in the range of 0.1-2 mm and a repetition rate within the range of 2 Hz to 20 Hz.

Abstract: The appliance includes a jet source of fluid, and a nozzle assembly through which the fluid is directed and then out for application to the teeth. A flow interrupter assembly is mounted within the nozzle assembly, such that the interrupter assembly is responsive to the fluid flow to produce momentary successive interruptions of the fluid flow by the action of the interrupter assembly moving from an original position to a flow interrupting position and then returning to its original position as the flow decreases and then is interrupted, due to the fluid flow itself, resulting in a cyclical perturbation in the fluid flow from the nozzle, by flow action alone.