Patents by Inventor Yu-Wen Chi

Yu-Wen Chi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Focalized microwave plasma reactor
    Patent number: 11183369
    Abstract: Provided is a focalized microwave plasma reactor. The reactor utilizes a cylindrical microwave resonant cavity of the quasi-TM011 mode to focalize microwave power and to excite focalized microwave plasma for the processes of microwave plasma enhanced chemical vapour depositions.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: November 23, 2021
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Chen Chang, Yu-Wen Chi, Kun-Ping Huang
  • FOCALIZED MICROWAVE PLASMA REACTOR
    Publication number: 20200211825
    Abstract: Provided is a focalized microwave plasma reactor. The reactor utilizes a cylindrical microwave resonant cavity of the quasi-TM011 mode to focalize microwave power and to excite focalized microwave plasma for the processes of microwave plasma enhanced chemical vapour depositions.
    Type: Application
    Filed: August 1, 2019
    Publication date: July 2, 2020
    Applicant: Industrial Technology Research Institute
    Inventors: Chih-Chen Chang, Yu-Wen Chi, Kun-Ping Huang
  • Metal-doped graphene and growth method of the same
    Patent number: 10079392
    Abstract: A metal-doped graphene and a growth method of the same are provided. The metal-doped graphene includes graphene and metal elements, wherein the metal elements accounts for 1-30 at % based on the total content of the metal-doped graphene. The growth method includes performing a PECVD by using a carbon precursor, a metal precursor, and a group VI precursor in order to grow the metal-doped graphene.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: September 18, 2018
    Assignee: Industrial Technology Research Institute
    Inventors: Kun-Ping Huang, Yu-Wen Chi
  • METAL-DOPED GRAPHENE AND GROWTH METHOD OF THE SAME
    Publication number: 20170263940
    Abstract: A metal-doped graphene and a growth method of the same are provided. The metal-doped graphene includes graphene and metal elements, wherein the metal elements accounts for 1-30 at % based on the total content of the metal-doped graphene. The growth method includes performing a PECVD by using a carbon precursor, a metal precursor, and a group VI precursor in order to grow the metal-doped graphene.
    Type: Application
    Filed: July 6, 2016
    Publication date: September 14, 2017
    Inventors: Kun-Ping Huang, Yu-Wen Chi