Abstract: Provided are a device and method for a programmable hand-held device for use in a semiconductor manufacturing environment. In one example, the device includes an interface, a processor, an input device, and a memory. The interface may establish a connection between the device and at least one of the process tools. The processor may process executable instructions. The input device may receive input instructions for programming a specific type of tool. The memory contains the executable instructions, which may be divided into multiple subsets of instructions, where each subset is adapted for communication with a specific type of tool. The instructions may include identifying the specific type of tool referenced by the input instructions, selecting the subset of instructions adapted for communication with the selected specific type of tool, and programming the selected specific type of tool via the interface using the subset of instructions and the input instructions.

Abstract: Provided are a device and method for a programmable hand-held device for use in a semiconductor manufacturing environment. In one example, the device includes an interface, a processor, an input device, and a memory. The interface may establish a connection between the device and at least one of the process tools. The processor may process executable instructions. The input device may receive input instructions for programming a specific type of tool. The memory contains the executable instructions, which may be divided into multiple subsets of instructions, where each subset is adapted for communication with a specific type of tool. The instructions may include identifying the specific type of tool referenced by the input instructions, selecting the subset of instructions adapted for communication with the selected specific type of tool, and programming the selected specific type of tool via the interface using the subset of instructions and the input instructions.

Abstract: A parallel ruler comprises a frame, and a plurality of gauges disposed in a flat portion of the frame. The gauges have compressible parts protruding downward beyond a lower surface of the frame for measuring a distance to a plane.

Abstract: A method for automated monitoring and controlling of a semiconductor wafer plasma process including performing a plasma process in a plasma processing system to treat a semiconductor process wafer according to a first plasma process recipe; collecting plasma process parameters including at least an RF power and a plasma process time at pre-determined time intervals; and, storing the plasma process parameters including pre-process plasma processing system parameters according to a selectively queryable database to create a plasma process history such that upon abortion of the plasma process the plasma process history may be selectively retrieved to determine a second plasma process recipe to complete the plasma process.

Abstract: A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided. The silicon nitride film is then exposed to oxygen-containing plasma such as ozone plasma. A thick BSG film is then deposited onto the treated surface of the silicon nitride film. By pre-treating the silicon nitride film with ozone plasma for about 60 seconds, an increase of near 50% of Kapp of the BSG film is obtained.

Abstract: A method for automated monitoring and controlling of a semiconductor wafer plasma process including performing a plasma process in a plasma processing system to treat a semiconductor process wafer according to a first plasma process recipe; collecting plasma process parameters including at least an RF power and a plasma process time at pre-determined time intervals; and, storing the plasma process parameters including pre-process plasma processing system parameters according to a selectively queryable database to create a plasma process history such that upon abortion of the plasma process the plasma process history may be selectively retrieved to determine a second plasma process recipe to complete the plasma process.

Abstract: A method of enhancing adhesion strength of a boro-silicate glass (BSG) film to a silicon nitride film is provided. A semiconductor substrate with a silicon nitride film formed thereon is provided. The silicon nitride film is then exposed to oxygen-containing plasma such as ozone plasma. A thick BSG film is then deposited onto the treated surface of the silicon nitride film. By pre-treating the silicon nitride film with ozone plasma for about 60 seconds, an increase of near 50% of Kapp of the BSG film is obtained.