Abstract: A manufacturing method of a semiconductor device is provided in an embodiment of the present invention. The manufacturing method includes the following steps. A transistor is formed on a substrate. The transistor includes a plurality of semiconductor sheets and two source/drain structures. The semiconductor sheets are stacked in a vertical direction and separated from one another. Each of the semiconductor sheets includes two first doped layers and a second doped layer disposed between the two first doped layers in the vertical direction. A conductivity type of the second doped layer is complementary to a conductivity type of each of the two first doped layers. The two source/drain structures are disposed at two opposite sides of each of the semiconductor sheets in a horizontal direction respectively, and the two source/drain structures are connected with the semiconductor sheets.

Abstract: A manufacturing method of a semiconductor device is provided in an embodiment of the present invention. The manufacturing method includes the following steps. A transistor is formed on a substrate. The transistor includes a plurality of semiconductor sheets and two source/drain structures. The semiconductor sheets are stacked in a vertical direction and separated from one another. Each of the semiconductor sheets includes two first doped layers and a second doped layer disposed between the two first doped layers in the vertical direction. A conductivity type of the second doped layer is complementary to a conductivity type of each of the two first doped layers. The two source/drain structures are disposed at two opposite sides of each of the semiconductor sheets in a horizontal direction respectively, and the two source/drain structures are connected with the semiconductor sheets.

Abstract: A semiconductor device includes a substrate and a first transistor disposed on the substrate. The first transistor includes first semiconductor sheets and two first source/drain structures. The first semiconductor sheets are stacked in a vertical direction and separated from one another. Each of the first semiconductor sheets includes two first doped layers and a second doped layer disposed between the two first doped layers in the vertical direction. A conductivity type of the second doped layer is complementary to a conductivity type of each of the first doped layers. The two first source/drain structures are disposed at two opposite sides of each of the first semiconductor sheets in a horizontal direction respectively, and the two first source/drain structures are connected with the first semiconductor sheets.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: The present invention provides a light-emitting diode (LED) drive control circuit having an input terminal and an output terminal. The input terminal and a switching device are coupled in series between power supply terminals. The output terminal is coupled to an LED. The switching device includes a single-pole double-throw switch. A first branch of the single-pole double-throw switch is a wire. A second branch of the single-pole double-throw switch includes a resistor and an indicator in series. The circuit includes a semiconductor switch that is either on or off. When the single-pole double-throw switch is switched to the first branch, the semiconductor switch is on and turns on the LED. When the single-pole double-throw switch is switched to the second branch, the semiconductor switch is off and turns off the LED. The circuit can effectively turn the LED on and off to avoid power leakage and slight emission of light.

Abstract: A lighting system is provided. The lighting system includes a plurality of lamp modules connected in series, wherein each of the lamp modules includes a decoder and a lamp. When a first lamp module of the lamp modules receives a trigger signal, a first decoder of the first lamp module configures a first identification code for a first lamp of the first lamp module, and provides a configuring signal to a second decoder of a second lamp module of the lamp modules to configure a second identification code for a second lamp of the second lamp module. The second lamp module is a next lamp module following the first lamp module.