Patents by Inventor Yu-Wen YEH

Yu-Wen YEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210375639
    Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.
    Type: Application
    Filed: August 16, 2021
    Publication date: December 2, 2021
    Inventors: Ya-Wen YEH, Yu-Tien SHEN, Shih-Chun HUANG, Po-Chin CHANG, Wei-Liang LIN, Yung-Sung YEN, Wei-Hao WU, Li-Te LIN, Pinyen LIN, Ru-Gun LIU
  • Publication number: 20210358752
    Abstract: A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.
    Type: Application
    Filed: July 26, 2021
    Publication date: November 18, 2021
    Inventors: Shih-Chun Huang, Ya-Wen Yeh, Chien-Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Ru-Gun Liu, Chin-Hsiang Lin, Yu-Tien Shen
  • Patent number: 11158726
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsu-Hui Su, Chun-Hsiang Fan, Yu-Wen Wang, Ming-Hsi Yeh, Kuo-Bin Huang
  • Publication number: 20210272807
    Abstract: A directional patterning method includes following steps. A substrate is provided with a mask layer thereon, and the mask layer has at least one opening pattern therein. A cyclic deposition and etching process is performed to increase a length of the at least one opening pattern.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Chin Chang, Li-Te Lin, Ru-Gun Liu, Wei-Liang Lin, Pinyen Lin, Yu-Tien Shen, Ya-Wen Yeh
  • Patent number: 10367227
    Abstract: An electrolyte composition and a metal-ion battery employing the same are provided. The electrolyte composition includes a metal chloride, a chlorine-containing ionic liquid, and an additive, wherein the additive has a structure represented by Formula (I) [M]i[(A(SO2CxF2x+1)y)b?]j??Formula (I), wherein M can be imidazolium cation, ammonium cation, azaannulenium cation, . . . etc., wherein M has a valence of a; a can be 1, 2, or 3; A can be N, O, Si, or C; x can be 1, 2, 3, 4, 5, or 6; y can be 1, 2, or 3; b can be 1, 2, or 3; i can be 1, 2, or 3; j can be 1, 2, or 3; a/b=j/i; and when y is 2 or 3, the (SO2CxF2x+1) moieties are the same or different.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: July 30, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Che-Wei Chang, Wen-Sheng Chang, Chun-Tsung Hsu, Yu-Wen Yeh, Tai-Feng Hung, Chang-Chung Yang
  • Patent number: 10177412
    Abstract: An electrolyte composition and a sodium secondary battery are provided. The electrolyte composition includes an alcohol compound and a metallic salt, wherein the metallic salt consists of a sodium salt formed. The sodium secondary battery includes the electrolyte composition, a positive electrode, a negative electrode, and a separator disposed between the positive electrode and the negative electrode.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: January 8, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Tai-Feng Hung, Yu-Wen Yeh, Wen-Sheng Chang, Chang-Chung Yang, Che-Wei Chang
  • Publication number: 20170358815
    Abstract: An electrolyte composition and a metal-ion battery employing the same are provided. The electrolyte composition includes a metal chloride, a chlorine-containing ionic liquid, and an additive, wherein the additive has a structure represented by Formula (I) [M]i[(A(SO2CxF2x+1)y)b?]j??Formula (I) , wherein M can be imidazolium cation, ammonium cation, azaannulenium cation, . . . etc., wherein M has a valence of a; a can be 1, 2, or 3; A can be N, O, Si, or C; x can be 1, 2, 3, 4, 5, or 6; y can be 1, 2, or 3; b can be 1, 2, or 3; i can be 1, 2, or 3; j can be 1, 2, or 3; a/b=j/i; and when y is 2 or 3, the (SO2CxF2x+1) moieties are the same or different.
    Type: Application
    Filed: June 14, 2017
    Publication date: December 14, 2017
    Applicant: Industrial Technology Research Institute
    Inventors: Che-Wei CHANG, Wen-Sheng CHANG, Chun-Tsung HSU, Yu-Wen YEH, Tai-Feng HUNG, Chang-Chung YANG
  • Publication number: 20170054177
    Abstract: An electrolyte composition and a sodium secondary battery are provided. The electrolyte composition includes an alcohol compound and a metallic salt, wherein the metallic salt consists of a sodium salt formed. The sodium secondary battery includes the electrolyte composition, a positive electrode, a negative electrode, and a separator disposed between the positive electrode and the negative electrode.
    Type: Application
    Filed: November 24, 2015
    Publication date: February 23, 2017
    Applicant: Industrial Technology Research Institute
    Inventors: Tai-Feng HUNG, Yu-Wen YEH, Wen-Sheng CHANG, Chang-Chung YANG, Che-Wei CHANG
  • Publication number: 20160156035
    Abstract: Disclosed is a composite material, having the chemical structure represented below: Na1+(4?a)xTi2?xMx(PO4)3/C, wherein the M is an element with valence a, a is a positive integer from 1 to 4, and 0.1?x?0.4. The composite material can be mixed with an electrically conductive agent and a binder to form a negative electrode for application in a sodium secondary battery.
    Type: Application
    Filed: December 29, 2014
    Publication date: June 2, 2016
    Applicant: Industrial Technology Research Institute
    Inventors: Tai-Feng HUNG, Yu-Wen YEH, Wen-Sheng CHANG, Chang-Chung YANG
  • Publication number: 20150333299
    Abstract: A curved battery includes an arc protection member and a battery unit. The battery unit is disposed in the arc protection member and has a shape corresponding to the arc protection member. The battery unit includes a first electrode layer, a second electrode layer, a conductive material, a first conductive handle and a second conductive handle. The battery unit is winded from one end away from the first conductive handle and the second conductive handle towards directions of the first conductive handle and the second conductive handle. The first conductive handle and the second conductive handle point to directions perpendicular to an axial direction of the battery unit and extend out of the arc protection member via two openings of the arc protection member. Thus, the curved battery is allowed with a large curvature that is less likely to cause damages of the battery unit.
    Type: Application
    Filed: May 6, 2015
    Publication date: November 19, 2015
    Inventors: Chin-Huang TSAI, Zong-Ci LIN, Yu-Wen YEH, Kuang-Chang WANG, Xue-Kun XING