Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the stack, including a first surface facing the stack and a second surface opposite to the first surface. The filter includes pairs of layers with different refractive indexes alternately stacked, and a portion of the first light is transmitted by the filter. The light emitting device emits a second light including the portion of the first light, and the second light includes a first directional part with a first FWHM and a second directional part with a second FWHM. The first directional part has a first angle with a normal direction of the second surface in a range of 45-90 degrees, the second directional part has a second angle with the normal direction of the second surface in a range of 0-30 degrees, and the second FWHM is smaller than the first FWHM.