Abstract: A gate dielectric breakdown test method is disclosed. The method includes performing a one step programmed VRDB test using Vcc voltage power source, gate current density for the corresponding ramped voltages are recorded. If the gate current density is found to be higher than a specified gate current density criterion, then the gate oxide is deemed to defective and is scrapped. And, if the gate current density (Jg) is found to be less than the specified gate current density criterion (Jc), then a differential gate current density ratio R=&Dgr;Jg/Jg for the corresponding ramped voltages are calculated. If the R value is found to be less than a specified differential current density ratio criterion (Rc), then the gate dielectric is considered to be robust, and if the R value is greater than the Rc value, then the gate dielectric is considered to be inflected. Accordingly, the voltage Vg can be effectively used for justifying the integrity of the gate dielectric.

Abstract: A gate dielectric breakdown test method is disclosed. The method includes performing a one step programmed VRDB test using Vcc voltage power source, gate current for the corresponding ramped voltages are recorded. If the gate current density is found to be higher than a specified gate current criterion, then the gate oxide is deemed to defective and is scrapped. And, if the gate current density (Jg) is found to be less than the specified gate current criterion (Jc), then a differential gate current density ratio R=Jg/Jg for the corresponding ramped voltages are calculated. If the R value is found to be less than a specified differential current density ratio criterion (Rc), then the gate dielectric is considered to be robust, and if the R value is greater than the Rc value, then the gate dielectric is considered to be inflected. Accordingly, the voltage Vg can be effectively used for justifying the integrity of the gate dielectric.