Abstract: In some embodiments, the present disclosure relates to a method that includes depositing multiple hard mask layers over an interconnect dielectric layer. A first patterning layer is deposited over the multiple hard mask layers, and a first masking structure is formed over the first masking structure. The first masking structure has openings formed by a first extreme ultraviolet (EUV) lithography process. Portions of the first patterning layer are removed according to the first masking structure. A second masking structure is formed within the patterned first patterning layer. A third masking structure is formed over a topmost one of the hard mask layers and has openings formed by a second EUV lithography process. Removal processes are performed to pattern the multiple hard mask layers to form openings in the interconnect dielectric layer, and interconnect wires having rounded corners are formed within the openings of the interconnect dielectric layer.

Abstract: A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.

Abstract: A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.

Abstract: In some embodiments, the present disclosure relates to a method that includes depositing multiple hard mask layers over an interconnect dielectric layer. A first patterning layer is deposited over the multiple hard mask layers, and a first masking structure is formed over the first masking structure. The first masking structure has openings formed by a first extreme ultraviolet (EUV) lithography process. Portions of the first patterning layer are removed according to the first masking structure. A second masking structure is formed within the patterned first patterning layer. A third masking structure is formed over a topmost one of the hard mask layers and has openings formed by a second EUV lithography process. Removal processes are performed to pattern the multiple hard mask layers to form openings in the interconnect dielectric layer, and interconnect wires having rounded corners are formed within the openings of the interconnect dielectric layer.

Abstract: A stationary exercise equipment resistance regulation device includes a stator holder, an axle, a circuit board, at least one magnetism detection element, a rotary knob, and at least one magnet. When the rotary knob is operated to rotate, a distance between a magnet and the magnetism detection element is changed so as to vary a magnetic force detected by the magnetism detection element to thereby change a magnitude of an induced voltage or generate a rotation turn signal. Based on the induced voltage or the rotation turn signal, a signal processing device identifies a resisting force level and calculates data of one of a resisting force magnitude and wattage that the resistance device applies to the stationary exercise equipment.

Abstract: A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.

Abstract: An integrated flywheel control apparatus for applying resisting force or driving force to a flywheel includes a resistance applying device mounted to an outer frame of a stator holder frame and arranged in a receiving space of a flywheel. A power generation/drive device is positioned on an inner frame of the stator holder frame. When the flywheel is acted upon by an external force to rotate, the power generation/drive device is caused by the rotation of the flywheel to rotate and a plurality of power actuating windings of the power generation/drive device generate electrical energy. The electrical energy is supplied to resistance applying device to apply a resisting force to the flywheel. When the power actuating windings of the power generation/drive device is supplied with an external electrical power, the power actuating windings are electromagnetically coupled to a plurality of magnets circumferentially arranged on an axle portion of the wheel to drive the flywheel to rotate.

Abstract: A signal detection device includes a strain gauge disposed in a strain gauge disposition section defined on a rotation spindle; a control circuit board disposed in the strain gauge disposition section and electrically connected to the strain gauge; an electrical power supply unit received in a receiving space defined in a pedal body to supply electrical power; an electric brush device disposed in a brush disposition section defined on the rotation spindle and set between the pedal body and the rotation spindle. The electric brush device is electrically connected to the control circuit board to supply the electrical power to the control circuit board. The electric brush device keeps the electrical power supply unit in electrical connection with the control circuit board whether the pedal body is rotating relative to the rotation spindle or not.

Abstract: A non-interdependent displacement measuring device for converting a rotary motion to a linear motion is disclosed, which includes a driving unit, a detection unit, and a resistance device. The driving unit includes an adjustment section and a driving section. The detection unit is arranged in the adjustment section. The driving section is connected to the resistance device. The detection unit includes a sensing module and a transmission module, and the detection unit is arranged in the adjustment section, so that when the adjustment section rotates, the detection unit detects turns and an angle of rotation of the adjustment section to generate a detection signal, which, after being subjected to calculation, is transmitted through the transmission module to the electronic device to display the level of an resistance, so as to overcome the drawbacks of the prior art that accuracy is poor, calibration is difficult, and fabrication is difficult due to a magnet and a sensor being arranged as two separate parts.

Abstract: A pulley force detection device for a weight-training fitness equipment includes a measured element arranged on a stator portion of a pulley of the fitness equipment, and a detection module arranged on a rotor portion. The detection module includes at least one measuring element corresponding to the measured element to detect a motion stroke, a speed, and a power value during force application to a pulley body. Alternatively, the measured element is arrangeable on the rotor portion of the pulley, while the measuring element is arranged on the stator portion of the pulley. The pulley force detection device is further combinable with a weight measurement device for detecting a weight of the weight block.

Abstract: A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.

Abstract: An integrated circuit structure and method of manufacturing the same are provided. The integrated circuit structure includes a plurality of conductive features within a dielectric layer overlying a substrate, a barrier layer disposed between each of the plurality of the conductive features and the dielectric layer, a protection layer between sidewalls of the barrier layer and the dielectric layer and a void disposed within the dielectric layer at a position between two adjacent conductive features of the plurality of the conductive features.

Abstract: A patterning process that can be utilized in order to help form conductive lines within a dielectric layer of a metallization layer is provided. In an embodiment a first interfacial layer is patterned a first time, the first interfacial layer being located over a first hard mask layer over a dielectric layer, the patterning the first interfacial layer the first time forming a first opening, which is filled with a first dielectric material. The first interfacial layer is patterned a second time, the patterning the first interfacial layer the second time forming second openings in the first interfacial layer, at least one of the second openings exposing the first dielectric material. The first dielectric material is removed, and the dielectric layer is patterned a second time after the removing the first dielectric material using the first interfacial layer as a mask, the patterning the dielectric layer extending the second openings.

Abstract: A driving and resistance control system for a permanent-magnet synchronous motor is disclosed. A control device includes a processing unit, a motor driving circuit, a resistance controller, and an interlock switch. In a first operation mode, the interlock switch makes the motor driving circuit and the permanent-magnet synchronous motor open-circuiting, and connecting stator windings of the permanent-magnet synchronous motor to the resistance controller, and under this condition, the external rotor of the permanent-magnet synchronous motor is rotated by spinning of a flywheel, so that the permanent-magnet synchronous motor is operating in a generator mode to generate a resisting force to the flywheel by mesas of a resistance generation device.

Abstract: In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.

Abstract: A method includes etching a dielectric layer to form an opening. A first conductive feature underlying the dielectric layer is exposed to the opening. A sacrificial spacer layer is deposited to extend into the opening. The sacrificial spacer layer is patterned. A bottom portion of the sacrificial spacer layer at a bottom of the opening is removed to reveal the first conductive feature, and a vertical portion of the sacrificial spacer layer in the opening and on sidewalls of the dielectric layer is left to form a ring. A second conductive feature is formed in the opening. The second conductive feature is encircled by the ring, and is over and electrically coupled to the first conductive feature. At least a portion of the ring is removed to form an air spacer.

Abstract: An integrated circuit structure and method of manufacturing the same are provided. The integrated circuit structure includes a plurality of conductive features within a dielectric layer overlying a substrate, a barrier layer disposed between each of the plurality of the conductive features and the dielectric layer, a protection layer between sidewalls of the barrier layer and the dielectric layer and a void disposed within the dielectric layer at a position between two adjacent conductive features of the plurality of the conductive features.

Abstract: A semiconductor manufacturing system includes a semiconductor processing apparatus. The semiconductor processing apparatus includes a processing chamber configured to perform a semiconductor process on a semiconductor wafer, and a transferring module configured to transfer the semiconductor wafer into and out of the processing chamber. The semiconductor manufacturing system also includes a particle attracting member. The semiconductor manufacturing system also includes a monitoring device configured to control the transferring module to load the particle attracting member into the processing chamber in a cleaning cycle while the semiconductor wafer is not in the processing chamber, and control the transferring module to load the particle attracting member out of the processing chamber after the cleaning cycle.

Abstract: A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.

Abstract: A particle removal method includes loading a particle attracting member with a coating layer into a processing chamber of a processing apparatus. The method also includes fixing the particle attracting member on a holder in the processing chamber in a cleaning cycle. The method also includes attracting particles in the processing chamber by the coating layer of the particle attracting member due to a potential difference between the particles and the coating layer. The particles are attracted to the surface of the coating layer. The method further includes loading the particle attracting member with the coating layer and the attracted particles out of the processing chamber, after the cleaning cycle. In addition, the method includes loading a semiconductor wafer into the processing chamber, and performing a semiconductor process on the semiconductor wafer in the processing chamber. The semiconductor process is performed after the cleaning cycle.