Patents by Inventor Yu-Yun Lo

Yu-Yun Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220173273
    Abstract: A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes a first-type semiconductor layer, a light-emitting layer disposed on the first-type semiconductor layer, and a second-type semiconductor layer disposed on the light-emitting layer. Moreover, the micro light-emitting diode structure includes a first electrode and a second electrode disposed on the top surface of the second-type semiconductor layer and electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively. The first electrode includes two portions, and a rounded corner is formed at the junction therebetween. From the top view of the micro light-emitting diode structure, the light-emitting layer and the second-type semiconductor layer define a mesa region. The area of the mesa region is smaller than the area of the first-type semiconductor layer. The mesa region exposes the first top surface of the first-type semiconductor layer.
    Type: Application
    Filed: May 19, 2021
    Publication date: June 2, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Hung LAI, Yu-Yun LO
  • Patent number: 11329202
    Abstract: A micro component structure includes a substrate, a micro component and a fixing structure. The micro component and the fixing structure are disposed on the substrate. The micro component has a spacing from the substrate. The fixing structure includes a first supporting layer and a second supporting layer. The micro component is connected to the substrate through the fixing structure. The first supporting layer is connected to the micro component and located between the second supporting layer and the micro component. A refractive index of the first supporting layer is greater than a refractive index of the second supporting layer.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: May 10, 2022
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Sheng-Chieh Liang, Shiang-Ning Yang
  • Publication number: 20220131057
    Abstract: A micro light-emitting diode disposed on and electrically connected to a circuit substrate includes: an epitaxial structure, at least one first electrode, a second electrode, and an insulating layer. The epitaxial structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked sequentially. The first electrode is electrically connected to the first semiconductor layer and extends from a side of the first semiconductor layer along at least one side surface of the epitaxial structure to a position between the second semiconductor layer and the circuit substrate. The second electrode is located below the second semiconductor layer and is electrically connected to the second semiconductor layer. The insulating layer is disposed at least between the at least one first electrode and the light emitting layer of the epitaxial structure and between the at least one first electrode and the second semiconductor layer of the epitaxial layer.
    Type: Application
    Filed: December 10, 2020
    Publication date: April 28, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Yi-Chun Shih, Bo-Wei Wu, Chang-Feng Tsai
  • Publication number: 20220131036
    Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer. The light-emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type semiconductor layer includes a first portion and a second portion connected to each other. A distance is present between an edge of the first portion and an edge of the second portion. A bottom area of the first portion is smaller than a top area of the second portion. The first electrode is disposed on the epitaxial structure and located on the first portion of the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure.
    Type: Application
    Filed: December 15, 2020
    Publication date: April 28, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Yen-Chun Tseng, Yi-Chun Shih, Bo-Wei Wu
  • Patent number: 11302842
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: April 12, 2022
    Assignee: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Chih-Ling Wu, Yi-Min Su, Yen-Yeh Chen, Yi-Chun Shih
  • Publication number: 20220069180
    Abstract: A micro semiconductor structure includes a substrate, a dissociative layer, a protective layer and a micro semiconductor. The dissociative layer is located on one side of the substrate. The protective layer is located on at least one side of the substrate. The micro semiconductor is located on the side of the substrate. The transmittance of the protective layer for a light source with wavelength smaller than 360 nm is less than 20%.
    Type: Application
    Filed: December 2, 2020
    Publication date: March 3, 2022
    Inventors: BO-WEI WU, SHIANG-NING YANG, YU-YUN LO, YI-CHUN SHIH
  • Publication number: 20220069000
    Abstract: A micro LED display device includes a micro light emitting unit, a conductive structure and a substrate. The micro light emitting unit includes a plurality of micro light emitting elements, and each of the micro light emitting elements includes a semiconductor structure and an electrode structure. The semiconductor structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The electrode structure includes a first type electrode and a second type electrode. The conductive structure includes a first type conductive layer and a second type conductive layer. The first type conductive layer is electrically connected to the first type electrode, and the second type conductive layer is electrically connected to the second type electrode. The micro light emitting unit is disposed on the substrate, and the electrode structure is disposed toward the substrate and includes a gap therebetween.
    Type: Application
    Filed: November 9, 2020
    Publication date: March 3, 2022
    Inventors: YU-YUN LO, BO-WEI WU, YI-CHUN SHIH, TZU-YU TING, KUAN-YUNG LIAO
  • Patent number: 11257987
    Abstract: A structure with micro light-emitting device includes a substrate, at least one micro light-emitting device, a holding structure, and at least one buffer structure. The micro light-emitting device is disposed on the substrate, and there is a vertical distance between the micro light-emitting device and the substrate. The holding structure is disposed on the substrate and directly contacts the micro light-emitting device. The buffer structure directly contacts the holding structure. Here, a Young's modulus of the buffer structure is smaller than a Young's modulus of the holding structure.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: February 22, 2022
    Assignee: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Chih-Ling Wu, Yi-Min Su
  • Publication number: 20220020903
    Abstract: A micro device includes an epitaxial structure, an overcoat layer, and a first light-guiding structure. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The insulating layer covers at least the bottom surface and part of the peripheral surface of the epitaxial structure. The overcoat layer includes a contact portion and an extension portion. The contact portion conformally covers the insulating layer and the peripheral surface and the bottom surface of the epitaxial structure, and the extension portion connects the contact portion and extends in a direction away from the peripheral surface. The display apparatus includes a circuit substrate and a plurality of the above-mentioned micro devices. The micro devices are disposed and are correspondingly electrically connected to the first pads and the second pads of circuit substrate.
    Type: Application
    Filed: September 30, 2021
    Publication date: January 20, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yi-Min Su, Sheng-Chieh Liang, Chih-Ling Wu, Gwo-Jiun Sheu, Yu-Yun Lo
  • Patent number: 11177154
    Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices including a carrier and a plurality of transfer units is provided. The transfer units are disposed on the carrier. Each of the transfer units includes a plurality of transfer parts. Each of the transfer parts has a transfer surface. Each of the micro devices has a device surface. The transfer surfaces of the transfer parts of each of the transfer units are connected to the device surface of corresponding micro device. The area of each of the transfer surfaces is smaller than the area of the device surface of the corresponding micro device. A micro device structure using the carrier structure is also provided.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: November 16, 2021
    Assignee: PixeLED Display CO., LTD.
    Inventors: Pei-Hsin Chen, Yi-Chun Shih, Yi-Ching Chen, Ying-Tsang Liu, Yu-Chu Li, Huan-Pu Chang, Chih-Ling Wu, Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Patent number: 11171271
    Abstract: A structure with micro device includes a substrate, at least one micro device, and at least one holding structure. The micro device includes an epitaxial structure and an overcoat layer. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The overcoat layer includes a contact portion and an extension portion. The contact portion covers the peripheral surface and the bottom surface of the epitaxial structure. The extension portion connects the contact portion and extends in a direction away from the peripheral surface. The holding structure includes at least one connecting portion, at least one sacrificial portion and at least one holding portion. The connecting portion is disposed on the top surface of the epitaxial structure and the extension portion of the overcoat layer. The sacrificial portion connects the connecting portion and the holding portion.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: November 9, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yi-Min Su, Sheng-Chieh Liang, Chih-Ling Wu, Gwo-Jiun Sheu, Yu-Yun Lo
  • Publication number: 20210320090
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 14, 2021
    Applicant: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20210305474
    Abstract: An apparatus with micro devices includes a circuit substrate, at least one micro device, and at least one light guide structure. The micro device is disposed on the circuit substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The light guide structure is disposed on the circuit substrate and is not in direct contact with the first-type electrode and the second-type electrode. The light guide structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. An orthographic projection area of the light guide structure on the top surface is smaller than an area of the top surface.
    Type: Application
    Filed: March 29, 2021
    Publication date: September 30, 2021
    Applicant: PlayNitride Inc.
    Inventors: Chih-Ling Wu, Yi-Min Su, Yu-Yun Lo
  • Publication number: 20210280741
    Abstract: A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate.
    Type: Application
    Filed: May 10, 2021
    Publication date: September 9, 2021
    Applicant: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Shiang-Ning Yang, Chang-Feng Tsai
  • Patent number: 11094675
    Abstract: A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: August 17, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Yun Lo, Tzu-Yang Lin, Yu-Hung Lai
  • Publication number: 20210249566
    Abstract: An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.
    Type: Application
    Filed: April 29, 2021
    Publication date: August 12, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Shiang-Ning YANG, Yi-Min SU, Yu-Yun LO, Bo-Wei WU, Tzu-Yu TING
  • Patent number: 11069556
    Abstract: A micro component structure includes a substrate, at least one micro component and a fixing structure. The micro component is disposed on the substrate, has a spacing from the substrate and has at least one top surface. The fixing structure is disposed on the substrate and includes at least one covering portion and at least one connecting portion. The covering portion is disposed on a portion of the top surface of the micro component, and the connecting portion is connected to an edge of the covering portion and extends onto the substrate. At least one of the covering portion and the connecting portion includes at least one patterned structure.
    Type: Grant
    Filed: April 8, 2020
    Date of Patent: July 20, 2021
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Bo-Wei Wu, Yu-Yun Lo, Shiang-Ning Yang, Ying-Ting Lin
  • Patent number: 11056614
    Abstract: A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, a side surface and a second surface opposite to the first surface. The side surface of the epitaxial structure connects to an outer edge of the first surface and an outer edge of the second surface. The first electrode is disposed on the first surface, and is electrically connected to the first type doped semiconductor layer and contacts the first type doped semiconductor layer on a portion of the first surface. The second electrode is disposed on and surrounds the side surface, and electrically connected to the second type doped semiconductor layer, and directly contacts the second type doped semiconductor layer on a portion of the side surface.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: July 6, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin
  • Publication number: 20210175278
    Abstract: A micro light-emitting diode display panel includes a substrate, a plurality of pixel structures, and a plurality of wavelength conversion structures. The pixel structures are disposed on the substrate. Each pixel structure includes a plurality of micro light-emitting diodes. The micro light-emitting diodes are formed by a plurality of different portions of a connected epitaxial structure. The wavelength conversion structures are disposed in the epitaxial structure and are respectively aligned with at least a portion of the micro light-emitting diodes.
    Type: Application
    Filed: April 20, 2020
    Publication date: June 10, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Sheng-Yuan Sun, Chih-Ling Wu, Yen-Yeh Chen
  • Patent number: 11031525
    Abstract: A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: June 8, 2021
    Assignee: PlayNitride Inc.
    Inventors: Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin