Patents by Inventor Yu-Yun Lo

Yu-Yun Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12272679
    Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes a circuit substrate and a plurality of micro light-emitting diode structures. The micro light-emitting diode structures each include a micro light-emitting chip and a molding structure. The micro light-emitting chip is electrically bonded to the circuit substrate, and includes a first surface, a second surface, and a peripheral surface. The first surface is located on a side of the micro light-emitting chip facing the circuit substrate. The second surface is disposed opposite to the first surface. The peripheral surface connects the first surface and the second surface. The molding structure surrounds the peripheral surface and encloses the second surface of the micro light-emitting chip. The molding structure extends in a direction away from the circuit substrate and forms an inner side wall. The inner side wall and the second surface constitute an accommodating portion.
    Type: Grant
    Filed: January 6, 2022
    Date of Patent: April 8, 2025
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Shiang-Ning Yang, Sheng-Yuan Sun, Loganathan Murugan, Yu-Yun Lo, Bo-Wei Wu
  • Publication number: 20250098373
    Abstract: A micro light-emitting element is provided. The micro light-emitting element includes a first-type semiconductor having a bottom surface and a light-emitting layer disposed on the first-type semiconductor. The micro light-emitting element also includes a second-type semiconductor disposed on the light-emitting layer and an intrinsic semiconductor disposed on the second-type semiconductor and made of the same material as the second-type semiconductor. The intrinsic semiconductor has a top surface relative to the bottom surface. The sidewalls of the first-type semiconductor, the light-emitting layer, the second-type semiconductor, and the intrinsic semiconductor form a continuous side surface, and the side surface connects the bottom surface to the top surface.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 20, 2025
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Yen-Yeh Chen, Chih-Ling Wu
  • Patent number: 12211815
    Abstract: A micro LED display panel is provided. The micro LED display panel includes a driving substrate and a plurality of bonding pads disposed on the driving substrate and spaced apart from each other. The micro LED display panel also includes a plurality of micro LED structures electrically connected to the bonding pads. Each micro LED structure includes at least one electrode disposed on the side of the micro LED structure facing the driving substrate. The electrode has a normal contact surface and a side contact surface. The normal contact surface faces the driving substrate, and the side contact surface is laterally connected to the corresponding bonding pad.
    Type: Grant
    Filed: January 13, 2022
    Date of Patent: January 28, 2025
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Shiang-Ning Yang, Yung-Chi Chu, Yu-Yun Lo, Bo-Wei Wu, Yu-Ya Peng
  • Patent number: 12132144
    Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.
    Type: Grant
    Filed: December 4, 2023
    Date of Patent: October 29, 2024
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Bo-Wei Wu, Yu-Yun Lo, Chien-Chen Kuo, Chang-Feng Tsai, Tzu-Yang Lin
  • Publication number: 20240347673
    Abstract: A micro light-emitting diode structure includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, and a base layer stacked with each other. A width of the light-emitting layer is greater than that of the first-type semiconductor layer and that of the second-type semiconductor layer. A width of the base layer is at least greater than that of the second-type semiconductor layer. A manufacturing method of the micro light-emitting diode structure by mixing dry etching and wet etching. The manufacturing method not only reduces the time that the semiconductor layers are in contact with the etching solution in the wet etching process to increase the etching stability, but avoids the dangling bond effect on the sidewall caused by the dry etching. Therefore, a combination of the advantages of the two etchings further increases the external quantum efficiency.
    Type: Application
    Filed: May 25, 2023
    Publication date: October 17, 2024
    Inventors: Yu-Yun LO, Bo-Wei WU, Kuo-Wei CHEN, Shih-Yao LIANG
  • Patent number: 12094858
    Abstract: A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.
    Type: Grant
    Filed: December 15, 2021
    Date of Patent: September 17, 2024
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Chang-Feng Tsai, Shiang-Ning Yang
  • Patent number: 12057528
    Abstract: A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.
    Type: Grant
    Filed: December 7, 2021
    Date of Patent: August 6, 2024
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Chang-Feng Tsai
  • Patent number: 12040437
    Abstract: A micro light-emitting component, a micro light-emitting structure and a display device are disclosed. The micro light-emitting component has a micro light-emitting chip and a buffer element. The micro light-emitting chip has a first surface, a second surface opposite to the first surface and a plurality of outer sidewalls. The buffer element is disposed on the outer sidewalls or the first surface of the micro light-emitting chip. The buffer element has an inner surface and an outer surface. An angle is defined between the inner surface and the first surface or an extended surface of the first surface. The angle is greater than or equal to 90 degrees and less than or equal to 180 degrees. Therefore, the buffer element prevents the first surface of the micro light-emitting chip from damaging by collision when the micro light-emitting chip is dropped with the first surface facing down during a transferring procedure.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: July 16, 2024
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Bo-Wei Wu, Yu-Yun Lo, Shiang-Ning Yang
  • Patent number: 12015103
    Abstract: A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: June 18, 2024
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Shiang-Ning Yang, Chang-Feng Tsai
  • Patent number: 12009456
    Abstract: A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.
    Type: Grant
    Filed: November 6, 2021
    Date of Patent: June 11, 2024
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Bo-Wei Wu, Yu-Yun Lo, Shiang-Ning Yang, Chang-Feng Tsai
  • Publication number: 20240097067
    Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.
    Type: Application
    Filed: December 4, 2023
    Publication date: March 21, 2024
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Bo-Wei Wu, Yu-Yun Lo, Chien-Chen Kuo, Chang-Feng Tsai, Tzu-Yang Lin
  • Patent number: 11916172
    Abstract: An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.
    Type: Grant
    Filed: April 29, 2021
    Date of Patent: February 27, 2024
    Assignee: PLAYNITRIDE DISPLAY CO., LTD.
    Inventors: Shiang-Ning Yang, Yi-Min Su, Yu-Yun Lo, Bo-Wei Wu, Tzu-Yu Ting
  • Patent number: 11901479
    Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: February 13, 2024
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Bo-Wei Wu, Yu-Yun Lo, Chien-Chen Kuo, Chang-Feng Tsai, Tzu-Yang Lin
  • Patent number: 11843024
    Abstract: A micro LED display device includes a micro light emitting unit, a conductive structure and a substrate. The micro light emitting unit includes a plurality of micro light emitting elements, and each of the micro light emitting elements includes a semiconductor structure and an electrode structure. The semiconductor structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The electrode structure includes a first type electrode and a second type electrode. The conductive structure includes a first type conductive layer and a second type conductive layer. The first type conductive layer is electrically connected to the first type electrode, and the second type conductive layer is electrically connected to the second type electrode. The micro light emitting unit is disposed on the substrate, and the electrode structure is disposed toward the substrate and includes a gap therebetween.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: December 12, 2023
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Yi-Chun Shih, Tzu-Yu Ting, Kuan-Yung Liao
  • Patent number: 11804569
    Abstract: A micro semiconductor structure includes a substrate, a dissociative layer, a protective layer and a micro semiconductor. The dissociative layer is located on one side of the substrate. The protective layer is located on at least one side of the substrate. The micro semiconductor is located on the side of the substrate. The transmittance of the protective layer for a light source with wavelength smaller than 360 nm is less than 20%.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: October 31, 2023
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Bo-Wei Wu, Shiang-Ning Yang, Yu-Yun Lo, Yi-Chun Shih
  • Patent number: 11735461
    Abstract: A semiconductor structure disposed on a temporary carrier board is provided. Multiple adhesive layers are disposed on the temporary carrier. The semiconductor structure includes an adhesive-layer structure and a micro light-emitting element. The adhesive-layer structure includes a mending adhesive layer and a buffer layer. The mending adhesive layer is disposed on the temporary carrier board. The micro light-emitting element is disposed on the mending adhesive layer. The buffer layer is disposed between the mending adhesive layer and the micro light-emitting element. A height of the mending adhesive layer is less than a height of each of the adhesive layers in a thickness direction of the temporary carrier board. A sum of the height of the mending adhesive layer and the height of the buffer layer is greater than or equal to a height of each of the adhesive layers.
    Type: Grant
    Filed: September 26, 2021
    Date of Patent: August 22, 2023
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Chih-Kai Huang, Bo-Wei Wu, Shiang-Ning Yang
  • Publication number: 20230261137
    Abstract: A micro light-emitting diode includes an epitaxial structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, and has a first ion implantation region. A first distance is present between a surface of the first type semiconductor layer and a top surface of the light-emitting layer adjacent to the surface. A second distance is present between the surface of the first type semiconductor layer and a first bottom side of the first ion implantation region. The second distance is greater than the first distance and less than a height of a mesa. A first included angle having an absolute value between 0 and 15 degrees is present between a first extension direction of a first inner side of the first ion implantation region and a normal direction of the light-emitting layer.
    Type: Application
    Filed: August 29, 2022
    Publication date: August 17, 2023
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Shih-Yao Liang
  • Patent number: 11705548
    Abstract: An apparatus with micro devices includes a circuit substrate, at least one micro device, and at least one light guide structure. The micro device is disposed on the circuit substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The light guide structure is disposed on the circuit substrate and is not in direct contact with the first-type electrode and the second-type electrode. The light guide structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. An orthographic projection area of the light guide structure on the top surface is smaller than an area of the top surface.
    Type: Grant
    Filed: March 29, 2021
    Date of Patent: July 18, 2023
    Assignee: PlayNitride Inc.
    Inventors: Chih-Ling Wu, Yi-Min Su, Yu-Yun Lo
  • Publication number: 20230154901
    Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes a circuit substrate and a plurality of micro light-emitting diode structures. The micro light-emitting diode structures each include a micro light-emitting chip and a molding structure. The micro light-emitting chip is electrically bonded to the circuit substrate, and includes a first surface, a second surface, and a peripheral surface. The first surface is located on a side of the micro light-emitting chip facing the circuit substrate. The second surface is disposed opposite to the first surface. The peripheral surface connects the first surface and the second surface. The molding structure surrounds the peripheral surface and encloses the second surface of the micro light-emitting chip. The molding structure extends in a direction away from the circuit substrate and forms an inner side wall. The inner side wall and the second surface constitute an accommodating portion.
    Type: Application
    Filed: January 6, 2022
    Publication date: May 18, 2023
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Shiang-Ning Yang, Sheng-Yuan Sun, LOGANATHAN MURUGAN, Yu-Yun Lo, Bo-Wei Wu
  • Publication number: 20230128274
    Abstract: A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.
    Type: Application
    Filed: December 15, 2021
    Publication date: April 27, 2023
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yu-Yun Lo, Bo-Wei Wu, Chang-Feng Tsai, Shiang-Ning Yang