Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.

Abstract: A flip chip type laser diode includes a removable substrate, a first semiconductor layer, an emitting layer, a second semiconductor layer, at least one current conducting layer, a patterned insulating layer, at least one first electrode and a second electrode. The first semiconductor layer is disposed on the removable substrate. The emitting layer is disposed on a part of the first semiconductor layer. The second semiconductor layer is disposed on the emitting layer and forms a ridge mesa. The current conducting layer is disposed on a part of the first semiconductor layer. The patterned insulating layer covers the first semiconductor layer, the emitting layer, a part of the second semiconductor layer and a part of the current conducting layer. The first electrode and the second electrode are disposed on areas of the current conducting layer and the second semiconductor layer which are not covered by the patterned insulating layer.

Abstract: A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar.

Abstract: A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees.

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly.

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly.

Abstract: A flip chip type laser diode includes a substrate, a first semiconductor layer, an emitting layer, a second semiconductor layer, at least one current conducting layer, a patterned insulating layer, at least one first electrode and a second electrode. The first semiconductor layer is disposed on the substrate. The emitting layer is disposed on a part of the first semiconductor layer. The second semiconductor layer is disposed on the emitting layer and forms a ridge mesa. The current conducting layer is disposed on a part of the first semiconductor layer. The patterned insulating layer covers the first semiconductor layer, the emitting layer, a part of the second semiconductor layer and a part of the current conducting layer. The first electrode and the second electrode are disposed on areas of the current conducting layer and the second semiconductor layer which are not covered by the patterned insulating layer.

Abstract: A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar.

Abstract: A flip chip type laser diode includes a substrate, a first semiconductor layer, an emitting layer, a second semiconductor layer, at least one current conducting layer, a patterned insulating layer, at least one first electrode and a second electrode. The first semiconductor layer is disposed on the substrate. The emitting layer is disposed on a part of the first semiconductor layer. The second semiconductor layer is disposed on the emitting layer and forms a ridge mesa. The current conducting layer is disposed on a part of the first semiconductor layer. The patterned insulating layer covers the first semiconductor layer, the emitting layer, a part of the second semiconductor layer and a part of the current conducting layer. The first electrode and the second electrode are disposed on areas of the current conducting layer and the second semiconductor layer which are not covered by the patterned insulating layer.

Abstract: A flip chip type laser diode includes a first substrate, a first semiconductor layer disposed on the first substrate, an emitting layer disposed on one part of the first semiconductor layer, a second semiconductor layer disposed on the emitting layer and forming a ridge mesa, a current conducting layer disposed on another part of the first semiconductor layer, a patterned insulating layer covering the second semiconductor layer and the current conducting layer and including a first zone and a second zone which respectively expose a part of the current conducting layer and a part of the second semiconductor layer, a first electrode and a second electrode respectively disposed on the first zone and the second zone. A projection of the ridge mesa projected to the first substrate covers a part of projections of the first electrode and the second electrode projected to the first substrate.

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly.

Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.

Abstract: A light emitting diode (LED) package includes at least one light emitting unit having a first electrode and a second electrode, a first molding compound covering a part of the light emitting unit to expose the first electrode and the second electrode, and a first light transmissive plate disposed on the first molding compound opposite the light emitting unit. A side surface of the first molding compound and a side surface of the first light transmissive plate are coplanar or have even adjoined edges.

Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from ?0.2 volts to ?1.8 volts.

Abstract: A package structure of light emitting diode includes a substrate and a light emitting diode die. The substrate has an upper surface and a lower surface opposite to each other. Two upper metal pads without mutual conduction are arranged on the upper surface. Two lower metal pads without mutual conduction are arranged on the lower surface. The light emitting diode die is disposed across the two upper metal pads. The light emitting diode die has a first electrode and a second electrode electrically connected to the two upper metal pads respectively. Wherein an orthographic projection area of one of the lower metal pads is greater than or equal to an orthographic projection area of the light emitting diode die, and the orthographic projection area of the light emitting diode die is totally located within the orthographic projection area of one of the lower metal pads.

Abstract: A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.

Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.

Abstract: A package carrier is suitable for carrying at least one light emitting unit. The package carrier includes an annular shell and a transparent light guiding stage. The annular shell has a cavity. The transparent light guiding stage is disposed in the cavity of the annular shell. The light emitting unit is adapted to be disposed on the transparent light guiding stage, and a horizontal projection area of the transparent light guiding stage is greater than that of the light emitting unit. The light emitting unit emits a light beam to enter the transparent light guiding stage, and the light beam emits from a surface of the transparent light guiding stage relatively distant from the cavity.

Abstract: A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees.

Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.