Patents by Inventor Yu-Yun Wang

Yu-Yun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180190845
    Abstract: A compound-based solar cell including a first electrode, a second electrode, a first type doped semiconductor layer and a second type doped semiconductor layer is provided. The first type doped semiconductor layer is disposed between the first electrode and the second electrode, and the second type doped semiconductor layer is disposed between the first type doped semiconductor layer and the second electrode. The first type doped semiconductor layer has a first side adjacent to the first electrode and a second side adjacent to the second type doped semiconductor layer. The first type doped semiconductor layer includes at least one of a plurality of elements, and the elements include potassium, rubidium and cesium. The concentration of at least one of the elements on the first side is higher than the concentration on the second side. Besides, a manufacturing method of a light absorption layer is also provided.
    Type: Application
    Filed: December 30, 2016
    Publication date: July 5, 2018
    Applicant: Industrial Technology Research Institute
    Inventors: Lung-Teng Cheng, Yu-Yun Wang, Tung-Po Hsieh
  • Patent number: 8828767
    Abstract: The disclosure discloses a fabrication method for a light absorption layer of a solar cell, including: forming a precursor film on a substrate, wherein the precursor film includes the Group IB-IIB-IVA-VIA amorphous nanoparticles; and conducting a thermal process to the precursor film to form the light absorption layer on the substrate.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: September 9, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Tsung-Shin Wu, Shih-Hsiung Wu, Hung-Chun Pan, Lung-Teng Cheng, Yu-Yun Wang
  • Publication number: 20140179048
    Abstract: A method for preparing an absorbing layer of a solar cell includes the following steps. An absorbing layer precursor containing at least one group XIV element is loaded on a substrate. A solid vapor source containing a group XIV element, the same as the group XIV element in the absorbing layer precursor is provided. The solid vapor source corresponds to the absorbing layer precursor. The solid vapor source and the absorbing layer precursor are kept apart by a distance. A heating process is performed so that the absorbing layer precursor forms an absorbing layer, the solid vapor source is vaporized and generates a gas containing the group XIV element, and the gas containing the group XIV element inhibits the effusion of the group XIV element of the absorbing layer precursor so that the proportion of the group XIV element in the formed absorbing layer is consistent.
    Type: Application
    Filed: June 3, 2013
    Publication date: June 26, 2014
    Inventors: Tzung-Shin Wu, Shih-Hsiung Wu, Yu-Yun Wang, Hung-Ru Hsu, Ho-Min Chen
  • Publication number: 20130171768
    Abstract: The disclosure discloses a fabrication method for a light absorption layer of a solar cell, including: forming a precursor film on a substrate, wherein the precursor film includes the Group IB-IIB-IVA-VIA amorphous nanoparticles; and conducting a thermal process to the precursor film to form the light absorption layer on the substrate.
    Type: Application
    Filed: August 31, 2012
    Publication date: July 4, 2013
    Inventors: Tsung-Shin Wu, Shih-Hsiung Wu, Hung-Chun Pan, Lung-Teng Cheng, Yu-Yun Wang
  • Publication number: 20130017322
    Abstract: An embodiment of the invention provides a method for forming an indium (III) sulfide film, including providing a mixed solution containing a complexing agent, indium ions, and hydrogen sulfide ions; and contacting the mixed solution with a substrate to form an indium (III) sulfide film thereon, wherein the complexing agent has the following formula: wherein each of R1 and R2 respectively is hydrogen or hydroxyl.
    Type: Application
    Filed: November 25, 2011
    Publication date: January 17, 2013
    Inventors: Chung-Shin WU, Yu-Yun Wang, Pei-Sun Sheng