Patents by Inventor Yu-Ze Chen

Yu-Ze Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240107087
    Abstract: The subject application relates to a server, terminal and non-transitory computer-readable medium. The server for handling streaming data for a live streaming, comprising one or a plurality of processors, wherein the one or plurality of processors execute a machine-readable instruction to perform: recording the streaming data for the live streaming; storing the streaming data as archive contents with first identifier; receiving interaction information during the live streaming; storing the interaction information as contexts with second identifier, transmitting the archive contents with first identifier to a first user terminal; and transmitting the contexts to the first user terminal according to the first identifier and the second identifier. According to the subject application, the archive contents may be more immersive and the user experience may be enhanced.
    Type: Application
    Filed: June 26, 2023
    Publication date: March 28, 2024
    Inventors: Yu-Chuan CHANG, Kun-Ze LI, Che-Wei LIU, Chieh-Min CHEN, Kuan-Hung LIU
  • Publication number: 20190325906
    Abstract: A magnetic recording device includes a substrate, an intermediate layer disposed on the substrate, a magnetic recording layer disposed on the intermediate layer, and a graphene overcoat disposed on the magnetic recording layer. The graphene overcoat includes at least one layer of a graphene monoatomic layer which is a sheet-like monoatomic layer of sp2 bonded carbon atoms. A transition layer is interposed between the graphene overcoat and the magnetic recording layer. The transition layer includes carbon and at least one metal of the magnetic recording layer.
    Type: Application
    Filed: July 2, 2019
    Publication date: October 24, 2019
    Inventors: Moon-Sun Lin, TOMOO SHIGE, Shih-Chin Chen, Yu-Lun Chueh, Li-Chia Yang, Yu-Ze Chen, Yao-Jen Kuo
  • Patent number: 9840764
    Abstract: A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: December 12, 2017
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Yu-Lun Chueh, Henry Medina, Yu-Ze Chen, Jian-Guang Li, Teng-Yu Su
  • Publication number: 20170088945
    Abstract: A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.
    Type: Application
    Filed: September 30, 2015
    Publication date: March 30, 2017
    Inventors: Yu-Lun CHUEH, Henry MEDINA, Yu-Ze CHEN, Jian-Guang LI, Teng-Yu SU
  • Patent number: 9460919
    Abstract: A manufacturing method of a two-dimensional transition-metal chalcogenide thin film includes providing a substrate, providing a reaction film, providing a source and providing a microwave. The substrate is made of material having dipole moments. The reaction film, disposed on the substrate, has a predefined thickness and includes a transition-metal compound. The source includes S, Se, or Te. The substrate is heated by the microwave to produce a heat energy to the reaction film and the source; thus a chemical reaction takes place and the two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal thin film includes a plurality of elements, and each of the elements aligns along a predefined direction by controlling a value of the predefined thickness.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: October 4, 2016
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Yu-Lun Chueh, Yu-Ze Chen, Yi-Chen Hsieh, Henry Medina