Abstract: A light-emitting diode (LED) includes a light-transmissive substrate having a first surface, an epitaxial structure disposed on the first surface, an insulation structure, and first and second electrodes. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The insulation structure includes a first insulation layer covering the side wall and the upper surface, and a second insulation layer covering a portion of the first surface that is exposed from the epitaxial structure and the first insulation layer. The first insulation layer is formed with first and second holes through which the first and second electrodes are electrically connected to the epitaxial structure. The second insulation layer is formed with an opening. The insulation structure is made of at least one material selected from silicon oxide, silicon nitride, magnesium fluoride, Al2O3, TiO2 and Ti2O5.

Abstract: A cable management bracket includes a frame and a buckle member. The frame includes a first side portion and a second side portion, wherein the first side portion is opposite to the second side portion. The first side portion has a pivot hole, a first restraining portion and a second restraining portion, wherein the first restraining portion is located between the pivot hole and the second restraining portion. The second side portion has a first engaging portion. The buckle member includes a pivot portion and a second engaging portion. The pivot portion is inserted into the pivot hole and sandwiched in between the first restraining portion and the second restraining portion. The second engaging portion is rotatably engaged with the first engaging portion.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate having a first surface, an epitaxial structure disposed on the first surface, an insulation structure, and first and second electrodes. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The insulation structure includes a first insulation layer covering the side wall and the upper surface, and a second insulation layer covering a portion of the first surface that is exposed from the epitaxial structure and the first insulation layer. The first insulation layer is formed with first and second holes through which the first and second electrodes are electrically connected to the epitaxial structure. The second insulation layer is formed with an opening. The insulation structure is made of at least one material selected from silicon oxide, silicon nitride, magnesium fluoride, Al2O3, TiO2 and Ti2O5.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate which has a first surface, an epitaxial structure which is disposed on the first surface, a first insulation layer, and a second insulation layer. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The first insulation layer covers the side wall and the upper surface. The second insulation layer covers a portion of the first surface that is not covered by the epitaxial structure and the first insulation layer, and has a light transmittance greater than that of the first insulation layer. An LED package, an LED module, and a display device including the LEDs are also disclosed.

Abstract: A cable management bracket includes a frame and a buckle member. The frame includes a first side portion and a second side portion, wherein the first side portion is opposite to the second side portion. The first side portion has a pivot hole, a first restraining portion and a second restraining portion, wherein the first restraining portion is located between the pivot hole and the second restraining portion. The second side portion has a first engaging portion. The buckle member includes a pivot portion and a second engaging portion. The pivot portion is inserted into the pivot hole and sandwiched in between the first restraining portion and the second restraining portion. The second engaging portion is rotatably engaged with the first engaging portion.

Abstract: A flip-chip light-emitting device includes a light-emitting unit, a first electrode, and a second electrode. The light-emitting unit includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first electrode is disposed on the light-emitting unit and electrically connected to the first type semiconductor layer. The second electrode is disposed on the light-emitting unit and electrically connected to the second type semiconductor layer. The first electrode or the second electrode is free of gold, and includes an aluminum layer and at least one platinum layer disposed on the aluminum layer opposite to the light-emitting unit.

Abstract: A light-emitting diode includes a substrate, a light-emitting unit, an insulating layer, a first contact electrode and a second contact electrode. The insulating layer is disposed on the light-emitting unit, and has a first through hole and a second through hole. The first contact electrode and the second contact electrode pass through the first through hole and the second through hole to be electrically connected to the light-emitting unit, respectively. A projection of one of the first contact electrode and the second contact electrode on the substrate is rectangular-like in shape and has a first arc side and a second arc side that are opposite to each other.

Abstract: A flip-chip semiconductor light-emitting element and a semiconductor light-emitting device are provided. The element includes a substrate and a light-emitting epitaxial layer disposed on the substrate. When electrode structures are formed overlying the light-emitting epitaxial layer, a first electrode layer partially covering the light-emitting epitaxial layer is omitted, thus a surface of the light-emitting epitaxial layer has a higher flatness. When an insulating reflective layer and an insulating protective layer are subsequently formed, flatness of the insulating reflective layer and the insulating protective layer can be ensured.

Abstract: The present disclosure provides a light-emitting diode chip, which includes a substrate, an epitaxial structure, an electrode metal layer, and a eutectic metal layer. The eutectic metal layer has an elongation greater than that of the electrode metal layer, and a hardness less than that of the electrode metal layer.

Abstract: A wafer-level homogeneous bonding optical structure includes two optical lens sets disposed on an optically transparent wafer and a spacer disposed on the optically transparent wafer and between the two optical lens sets. The spacer is homogeneously bonded to and integrated with the optically transparent wafer in the absence of a heterogeneous adhesive.

Abstract: A light-emitting diode (LED) includes a light-transmissive substrate which has a first surface, an epitaxial structure which is disposed on the first surface, a first insulation layer, and a second insulation layer. The epitaxial structure has an upper surface opposite to the first surface, and a side wall interconnecting the upper surface and the first surface. The first insulation layer covers the side wall and the upper surface. The second insulation layer covers a portion of the first surface that is not covered by the epitaxial structure and the first insulation layer, and has a light transmittance greater than that of the first insulation layer. An LED package, an LED module, and a display device including the LEDs are also disclosed.

Abstract: A light emitting diode device includes a light emitting epitaxial layered structure and a current spreading layer formed on the light emitting epitaxial layered structure. The current spreading layer has a top surface and a bottom surface that are respectively distal from and proximal to the light emitting epitaxial layered structure, and a peripheral surface that interconnects the top surface and the bottom surface and that is formed with a first patterned structure. The peripheral surface and the bottom surface cooperatively define an interior angle included therebetween which is greater than 90° and smaller than 180°.

Abstract: A die bonding process for manufacturing a semiconductor device includes the steps of: a) preparing a semiconductor structure and a substrate, b) mounting an electrode structure on the semiconductor structure to form a semiconductor component, c) forming a protective component at a die bonding region, and d) mounting the semiconductor component on the substrate via a die bonding technique. The protective component is made of an adsorbent material which has a greater adsorption capability for a suspended pollutant around the semiconductor device than an adsorption capability for the suspended pollutant of a material for the electrode structure.

Abstract: A wafer-level optical structure includes at least two optical lens sets disposed on an optically transparent wafer, at least one trench disposed between two adjacent optical lens sets to divide the two adjacent optical lens sets, at least one spacer disposed between two adjacent optical lens sets to be correspondingly and partially disposed in the trench, and an adhesive disposed inside the trench.

Abstract: A wafer-level optical structure includes at least two optical lens sets disposed on an optically transparent wafer, at least one trench disposed between two adjacent optical lens sets to divide the two adjacent optical lens sets, at least one spacer disposed between two adjacent optical lens sets to be correspondingly and partially disposed in the trench, and an adhesive disposed inside the trench.

Abstract: A wafer-level homogeneous bonding optical structure includes two optical lens sets disposed on an optically transparent wafer and a spacer disposed on the optically transparent wafer and between the two optical lens sets. The spacer is homogeneously bonded to and integrated with the optically transparent wafer in the absence of a heterogeneous adhesive.

Abstract: A temperature regulation device includes a temperature regulator. The temperature regulator includes a current adjusting circuit, a refrigerator, and a transmission component. A temperature of the refrigerator is varied due to the adjustable current, and, via the transmission component, to thereby test the temperature-sensing integrity of an object such as a temperature sensor.

Abstract: A fan speed control device is applied to a fan including a speed control signal port and a speed signal port. The fan speed control device includes a speed regulating circuit. The speed regulating circuit includes a signal control unit electrically connected to the speed signal port of the fan, and an adjustable resistor is electrically connected between the signal control unit and the speed control signal port of the fan. The resistance of the adjustable resistor may be varied to change the voltage and current supplied to the fan, and the rotational speed of the fan changes according to the operating voltage and current supplied. The signal control unit obtains speed signals from the speed signal port and processes and displays the current testing parameters of the fan.

Abstract: An energy consumption detection system for an electronic device includes a detection device and a data processing device. The data processing device includes a signal control unit, a storage unit, and a signal setting unit. The signal control unit provides and outputs command signals, and the storage unit stores different function programs. The signal setting unit sets and runs the function program under the control of the signal control unit to activate and enable the detection device, and the detection device receives, processes, and transmits test results to the signal control unit, which generates energy consumption data accordingly.

Abstract: A method for performing data recovery of a server sends a data recovery request from a basic input output system (BIOS) of the server to a backup microchip of the server if a master operating system (OS) of an original microchip of the server is not available when the server is powered on, obtains a backup initial OS of the server from a storage unit of the backup microchip, and boots the backup initial OS according to a bootstrap of the backup initial OS. The method further obtains a backup master OS of the server from the storage unit of the backup microchip, sends the backup master OS to the original microchip of the server, and restarts the server according to the backup master OS.