Abstract: A display panel and a pixel circuit thereof are provided. The pixel circuit includes a driving current generator, a pulse width signal generator, a voltage provider, and a current enabler. The driving current generator provides a driving current. The pulse width signal generator includes an output switch. The output switch is controlled by a control signal, and provides a pulse width signal according to the control signal. The voltage provider adjusts the control signal according to a data write-in signal and a pulse width modulation enable signal. The current enabler provides the driving current to a lighting component according to the pulse width signal and an amplitude modulation enable signal.

Abstract: A scan driver circuit including shift register units and gate control circuits is provided. The shift register units are in a peripheral area of a display panel, and for receiving first clock signals. The gate control circuits are in an active area of the display panel, and for receiving second clock signals. Each shift register unit is coupled with corresponding N of the gate control circuits, and for providing a corresponding one of the first clock signals as a control signal to the corresponding N of the gate control circuits. The corresponding N of the gate control circuits are coupled with corresponding M of gate lines. The corresponding N of the gate control circuits are for providing, according to the control signal, corresponding M of the second clock signals as M gate signals to the corresponding M of gate lines, in which M and N are positive integers.

Abstract: The present disclosure relates to a driving circuit including a pulse amplitude modulation (PAM) circuit and a pulse width modulation (PWM) circuit. The PAM circuit includes a first transistor, a first capacitor, and a second transistor. The PWM circuit includes a second capacitor, a third transistor, and a fourth transistor. The first capacitor's first terminal is connected to the first transistor's gate. The second transistor's first terminal is connected to the first capacitor's first terminal, and the second transistor's second terminal is connected to the first transistor's second terminal. The third transistor's gate is connected to the second capacitor's second terminal. The fourth transistor's first terminal is connected to the third transistor's gate, the fourth transistor's second terminal is connected to the third transistor's second terminal, and the fourth transistor's gate is connected to the second transistor's gate and configured to receive a first control signal.

Abstract: A scan driver circuit including shift register units and gate control circuits is provided. The shift register units are in a peripheral area of a display panel, and for receiving first clock signals. The gate control circuits are in an active area of the display panel, and for receiving second clock signals. Each shift register unit is coupled with corresponding N of the gate control circuits, and for providing a corresponding one of the first clock signals as a control signal to the corresponding N of the gate control circuits. The corresponding N of the gate control circuits are coupled with corresponding M of gate lines. The corresponding N of the gate control circuits are for providing, according to the control signal, corresponding M of the second clock signals as M gate signals to the corresponding M of gate lines, in which M and N are positive integers.

Abstract: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

Abstract: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.