Abstract: Methods and systems for skill prediction include aggregating locally trained parameters from client systems to generate updated global parameters. Parameterized vectors from the client systems are clustered into prototype clusters. A centroid of each prototype cluster is determined and the parameterized vectors from the client systems are matched to centroids of the prototype clusters to identify sets of updated local prototype vectors. The updated global parameters and the updated local prototype vectors are distributed to the client systems.

Abstract: The present disclosure relates to an integrated chip comprising a substrate. A first conductive wire is over the substrate. A second conductive wire is over the substrate and is adjacent to the first conductive wire. A first dielectric cap is laterally between the first conductive wire and the second conductive wire. The first dielectric cap laterally separates the first conductive wire from the second conductive wire. The first dielectric cap includes a first dielectric material. A first cavity is directly below the first dielectric cap and is laterally between the first conductive wire and the second conductive wire. The first cavity is defined by one or more surfaces of the first dielectric cap.

Abstract: A method includes: receiving the semiconductor device, wherein the semiconductor device includes: a well region; a doped region; a plurality of gate electrodes; a plurality of source regions; and a plurality of drain regions, wherein the plurality of gate electrodes, the plurality of source region and the plurality of drain regions form a plurality of transistors; and a bulk region disposed in the doped region. A first distance measured between a first transistor of the plurality of transistors and the bulk region is greater than a second distance measured between a second transistor of the plurality of transistors and the bulk region. The method further includes: applying a first voltage to the plurality of drain regions, wherein a first avalanche current generated around the first transistor and shunted through the bulk region is greater than a second avalanche current generated around the second transistor and shunted through the bulk region.

Abstract: A method includes receiving an object mask of an object in an image. The method further includes generating a mask of a sub-object in the image using a machine learning model configured to receive the mask of the object. A first branch of the machine learning model predicts whether a pixel of the image belongs to a sub-object.

Abstract: A vertical farming system includes a support unit, at least one planting assembly, and a water circulation assembly. The support unit includes a fixing rack provided with at least one positioning portion. The at least one planting assembly includes a hanging member and at least one plant container hung below the fixing rack through the hanging member and having a drainage hole. The hanging member has a head detachably engaged with the positioning portion. The water circulation assembly includes a nutrient device and a pipeline having at least one outlet hole and at least one collection hole. The nutrient device is disposed on the pipeline and is located between the outlet hole and the collection hole. Irrigation water passes through the outlet hole to irrigate plants and then passes through the drainage hole of the plant container and returns to the pipeline through the collection hole.

Abstract: Apparatuses and methods are provided that relate to the improvement of the interconnection density and cable management of data center fiber optic networks by including a cassette module having a multilayer interface configuration. The cassette modules utilizes depth within an internal space to accomplish the multilayer interface configuration, which results in improved connector density, while maintaining simple connection schemes.

Abstract: A method and system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.

Abstract: An Alzheimer's disease biomarker, and a screening method therefor and use thereof. The Alzheimer's disease biomarker is 11(Z), 14(Z)-eicosadienoic acid. The screening method for the Alzheimer's disease biomarker comprises: acquiring samples, testing the samples, and performing structural identification and data analysis on metabolites in the samples, wherein specifically, metabolites in faeces samples can be tested by liquid chromatography-mass spectrometry, to carry out structural identification on the metabolites; and selecting a metabolite showing a difference from the metabolite level of a control group as the Alzheimer's disease biomarker.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate having a first principal surface; an interlayer insulating film; and a gate pad and a source pad provided on the film. The silicon carbide substrate includes a first region including unit cells; a second region overlapping the gate pad; and a third region. Each unit cell includes a drift region; a body region; a source region; a contact region; a gate electrode; and a gate insulating film. The second region includes a first semiconductor region. The third region includes a second semiconductor region. The first semiconductor region and the second semiconductor region are contiguous. In the interlayer insulation film, first and second contact holes are formed. The source pad is electrically connected to the source region and the contact region, electrically connected to the second semiconductor region.

Abstract: The present invention relates to a composition for preventing or treating inflammatory or autoimmune skin disease. The composition of the present invention may be useful as a fundamental therapeutic composition that is able to efficiently ameliorate skin tissue damage caused by inflammation while having a minimized impact on systemic immune activity by specifically inhibiting the activity of skin-specific T cells. The present invention also provides a screening method capable of quickly and highly reliably identifying promising therapeutic candidates that are able to alleviate various autoimmune and inflammatory damages occurring in skin tissue by inhibiting the activity of skin-specific T cells.

Abstract: An inhibitor of a prostate specific membrane antigen and a pharmaceutical use thereof. Specifically, the present solution belongs to the field of radiopharmaceuticals and relates to a compound represented by formula (IV) or a pharmaceutically acceptable salt thereof.

Abstract: In some embodiments, an integrated circuit device includes multiple rows of functional cells, with each row having a cell height. At least one of rows of functional cells includes at least one digital low-dropout voltage regulator (DLVR) cell with the cell height for the row. The DLVR cell includes: an input terminal, an output terminal, a voltage supply terminal, a reference voltage terminal, and one or more pairs of transistors. Each pair of transistors are arranged in cascode configuration connected between the voltage supply terminal and output terminal. The gate of one of the transistors the cascode configuration is connected to the input terminal, and the gate of the other transistor in the cascode configuration is connected to the reference voltage terminal. The four terminals each comprises a metal track in the bottom metal layer and disposed within the cell height.

Abstract: A method includes loading a wafer having a catalytic metal thereon into a processing chamber, introducing a hydrocarbon precursor into the processing chamber, pyrolyzing the hydrocarbon precursor; conducting the pyrolyzed hydrocarbon precursor to the catalytic metal to form a graphene layer on the catalytic metal at a temperature lower than about 400° C.

Abstract: An IC device includes a first anti-fuse structure including a first dielectric layer between a first gate conductor and an active area, a second anti-fuse structure including a second dielectric layer between a second gate conductor and the active area, and a first pair of conductive segments electrically connected to the first and second gate conductors and aligned along a row direction perpendicular to a column direction of the first and second gate conductors. The active area is included in a plurality of active areas, the first pair of conductive segments is included in a plurality of pairs of conductive segments, and adjacent pairs of conductive segments of the plurality of pairs of conductive segments are separated by a total of two active areas of the plurality of active areas.

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

Abstract: A semiconductor device includes a memory cell having a bottom electrode, a memory element, a selector, a top electrode and a connecting structure. The memory element is disposed on the bottom electrode. The selector is disposed on the memory element. The top electrode is disposed on the selector. The connecting structure is electrically connecting the memory element to the selector, wherein the connecting structure includes a base portion and a pillar portion. The base portion disposed on the memory element. The pillar portion is disposed on the base portion, wherein the pillar portion is physically connected to the selector, and includes a tapered pillar foot.

Abstract: A focused ultrasound treatment system has: a focused ultrasound unit configured to emit focused ultrasound waves to a focal region to perform treatment; an ultrasound imaging unit configured to, after treatment emit imaging ultrasonic waves to an imaging region and receive corresponding echoes, and image a corresponding vascular blood flow image on the basis of the echo; a region planning and parameter adjustment unit configured to re-delineate a focal region on the basis of the vascular blood flow image and to re-adjust a treatment parameter of the focused ultrasound unit so as to be used to next treat the re-delineated focal region. The imaging region contains the focal region.

Abstract: An electronic device includes a foldable screen bearing plate, a flexible display panel, and a support plate. The support plate includes a first support plate, a second support plate, and a third support plate. The screen bearing plate is provided with a reinforcing area, at a location corresponding to a gap between two adjacent support plates, with rigidity higher than that of a surrounding subsection. The reinforcing area is above at least a part of the gap, and overlaps the support plates on two sides of the part of the gap.

Abstract: The present disclosure provides a thermal management chip and system with a built-in interface host, and a management method. The thermal management chip includes a controllable current source sequence, a temperature sensing device category decision module, an analog-to-digital converter (ADC) module, a register bank & interface & control logic module, a non-volatile memory (NVM), a clock generator, and a local temperature sensing transistor. The thermal management chip further includes an Aip port, an Ain port, a pulse-width modulation (PWM) port, a tachometer (TACH) port, a master-slave mode select port, a serial data (SDA) port, a serial clock (SCL) port, and a status indication port.