Abstract: A touch display device is provided in this disclosure. The touch display device includes a substrate, a first conductive layer, a second conductive layer, a stacked structure, an inorganic light emitting unit, and a touch sensing circuit. The first conductive layer is disposed on the substrate. The first conductive layer includes a gate electrode. The second conductive layer is disposed on the first conductive layer. The second conductive layer includes a source electrode and a drain electrode. The stacked structure is disposed on the substrate. The stacked structure includes a conductive channel and a sensing electrode. The inorganic light emitting unit is disposed on the stacked structure. The inorganic light emitting unit is electrically connected with the drain electrode via the conductive channel. The touch sensing circuit is electrically connected with the sensing electrode.

Abstract: The present disclosure relates to air assemblies having an inflation, a deflation, and a closed state for use with inflatable products, such as air mattresses. Specifically, the present disclosure relates to air assemblies where the configuration of the air assembly can be changed manually by a user by operating a directional control valve to inflate, deflate, or close the inflatable product. The directional control valve may also activate a pump in the inflation and deflation states and deactivate the pump in the closed state.

Abstract: A method of manufacturing a semiconductor device includes at least the following steps. A protrusion is formed in a substrate by an anisotropic etch process, wherein a sidewall of the protrusion is inclined. A recess is formed on the sidewall of the protrusion by an isotropic etch process, wherein during the isotropic etch process, a by-product covers a first portion of the sidewall of the protrusion while exposing a second portion of the sidewall of the protrusion, so that the recess is formed between the first portion and the second portion of the sidewall.

Abstract: An epitaxial structure includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, and a buffer layer structure. The light emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light emitting layer. The buffer layer structure is disposed on one side of the first type semiconductor layer away from the second type semiconductor layer and includes a first buffer layer and a second buffer layer. The second buffer layer is located between the first buffer layer and the first type semiconductor layer, and the first buffer layer has a chlorine concentration greater than a chlorine concentration of the second buffer layer.

Abstract: Disclosed are techniques for selectively boosting conductive pillar bumps. In an aspect, an apparatus includes a plurality of metal pads, a first set of boosting pads attached to a first set of the plurality of metal pads, a first set of conductive pillar bumps attached to the first set of boosting pads, a second set of conductive pillar bumps attached to a second set of the plurality of metal pads, wherein heights of the first set of conductive pillar bumps are shorter than heights of the second set of conductive pillar bumps, and wherein heights of the first set of boosting pads plus the heights of the first set of conductive pillar bumps are within a tolerance threshold of the heights of the second set of conductive pillar bumps, and solder attached to the first set of conductive pillar bumps and the second set of conductive pillar bumps.

Abstract: The present disclosure provides binding agents, such as antibodies, that specifically bind ILT3, including human ILT3, as well as compositions comprising the binding agents, and methods of their use. The disclosure also provides related polynucleotides and vectors encoding the binding agents and cells comprising the binding agents.

Abstract: A wireless communication includes a control circuit and a receiver (RX) circuit. The control circuit obtains indicator information from another wireless communication system, identifies a transmitter (TX) and receiver (RX) packet delivery scenario as one of a packet overlapping scenario and a packet non-overlapping scenario according to the indicator information, and generates RX gain control information in response to the TX and RX packet delivery scenario. The RX circuit refers to the RX gain control information to set an RX gain used for receiving data.

Abstract: Semiconductor devices and methods of forming the same are provided. In an embodiment, a semiconductor device includes a first fin extending along a first direction, a second fin extending parallel to the first fin, and a gate structure over and wrapping around the first fin and the second fin, the gate structure extending along a second direction perpendicular to the first direction. The first fin bents away from the second fin along the second direction and the second fin bents away from the first fin along the second direction.

Abstract: A frame pool is disclosed including a frame assembly and a pool liner, the frame assembly including horizontal frame members and a vertical frame member coupled together via a T-shaped joint. The T-shaped joint may be constructed of plastic to facilitate attachment and detachment to the adjacent frame members and to resist galling and corrosion. The T-shaped joint may also be relatively small to improve the appearance and water containment of the frame pool.

Abstract: Sensing pixels each store a sensing voltage level. A method for driving the plurality of sensing pixels includes providing a plurality of readout scan signals to the plurality of sensing pixels, and providing a plurality of reset scan signals to the plurality of sensing pixels. One of the plurality of readout scan signals enables one of the plurality of sensing pixels to output the sensing voltage level stored in the one of the plurality of sensing pixels. One of plurality of reset scan signals resets the sensing voltage level stored in one of the plurality of sensing pixels. An nth reset scan signal of the plurality of reset scan signals is started behind an nth readout scan signal of the plurality of readout scan signals in time domain.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a circuit layer over the substrate. The semiconductor device further includes a test line electrically connected to the circuit layer. The semiconductor device further includes a capacitor on the substrate. The capacitor includes a first conductor, wherein the first conductor is on a portion of the substrate exposed by the circuit layer. The capacitor further includes an insulator surrounding the first conductor.

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.

Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.

Abstract: A semiconductor device includes a semiconductor substrate, at least one semiconductor fin and a gate stack. The semiconductor fin is disposed on the semiconductor substrate. The semiconductor fin includes a first portion, a second portion and a first neck portion between the first portion and the second portion. A width of the first portion decreases as the first portion becomes closer to the first neck portion, and a width of the second portion increases as the second portion becomes closer to a bottom surface of the semiconductor substrate. The gate stack partially covers the semiconductor fin.

Abstract: A water treatment system includes an ozone generator combined with an electrolytic chlorine generator in a compact, efficient and serviceable assembly. The system may include a modular and replaceable ozone generator, which allows a damaged or non-functional ozone generator to be quickly and efficiently replaced. In order to protect the ozone generator from damage, a fail-safe drain valve assembly may also be provided which will expel backflowing pool water before it is allowed to backflow into the ozone generator. The water treatment system may further include an insulated electrolytic chlorine generator that mitigates or eliminates current leakage for efficient operation.

Abstract: A water treatment system includes an ozone generator combined with an electrolytic chlorine generator in a compact, efficient and serviceable assembly. The system may include a modular and replaceable ozone generator, which allows a damaged or non-functional ozone generator to be quickly and efficiently replaced. In order to protect the ozone generator from damage, a fail-safe drain valve assembly may also be provided which will expel backflowing pool water before it is allowed to backflow into the ozone generator. The water treatment system may further include an insulated electrolytic chlorine generator that mitigates or eliminates current leakage for efficient operation.

Abstract: A method for labeling an image object and a circuit system are provided. In the method, an object classification method is used to segment an image into one or more regions. Each of the regions can be classified into one classification assigned with a classification label. A depth estimation method is used to estimate a depth of each pixel of the image. Whether or not the depth of the pixel matches the classification of the region to which the pixel belongs is determined. When the depth of the pixel matches the classification of the region, a post-processing process is performed on the image based on weights assigned to the regions according to the classification label of the region. Conversely, when the depth of the pixel does not match the classification of the region, the pixel is regarded as noise that does not require the post-processing process.

Abstract: A joint assembly (100) between multiple air chambers of an inflatable product (P). The joint assembly (100) may include a male component (102) coupled to a first air chamber and a female component (104) coupled to a second air chamber. When assembled, the multiple air chambers of the inflatable product may be in fluid communication with each other or with a multichannel air assembly configured to selectively inflate and/or deflate each chamber.

Abstract: The present invention provides a wireless communication method of an access point, wherein the wireless communication method comprises: generating a PPDU according to a traffic of the access point, wherein the PPDU includes a preamble and SIG field, a first data field, a midamble and SIG field and a second data field in sequence, the preamble and SIG field includes information of a first station and a first resource unit allocated to the first station, and the midamble and signal SIG field includes information of a second station and the first resource unit that is reallocated to the second station; transmitting the preamble and SIG field; using the first resource unit to transmit data corresponding to the first data field to the first station; transmitting the midamble and SIG field; and using the first resource unit to transmit data corresponding to the second data field to the second station.