Patents by Inventor Yuan Chang

Yuan Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250254991
    Abstract: A filler cell, a semiconductor device, and a logic circuit are provided. The filler cell includes two dummy polysilicon layers and a threshold voltage layer. The dummy polysilicon layers are arranged at intervals in a first direction. The threshold voltage layer is below the dummy polysilicon layers, and the two opposite sides of the threshold voltage layer in the first direction extend in a second direction and are respectively aligned with center points of the dummy polysilicon layers. The two opposite sides of the threshold voltage layer in the second direction are respectively aligned with the two opposite sides of each of the dummy polysilicon layers in the second direction. The first direction is perpendicular to the second direction. The semiconductor device includes a plurality of filler cells, at least one transistor cell, and another two threshold voltage layers. The logic circuit includes a plurality of semiconductor devices.
    Type: Application
    Filed: September 19, 2024
    Publication date: August 7, 2025
    Applicant: REALTEK SEMICONDUCTOR CORP.
    Inventor: Chan-Yuan Chang
  • Patent number: 12382724
    Abstract: A semiconductor device and a method for manufacturing a semiconductor device are provided. The semiconductor device comprises a substrate, a conductive element disposed within a first region of the substrate, and a first transistor disposed within a second region adjacent to the first region of the substrate. The conductive element is electrically connected to an electrode of the first transistor, and the conductive element penetrates the substrate and is configured to receive a supply voltage.
    Type: Grant
    Filed: May 28, 2021
    Date of Patent: August 5, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Cheng-Yu Lin, Po-Hsiang Huang, Pochun Wang, Chih-Liang Chen, Fong-Yuan Chang
  • Publication number: 20250244523
    Abstract: A display device includes a back plate, a display panel, an elastic layer, a light guide plate, a cover plate and an adhesive layer. The display panel is opposite to an installing surface of the back plate. The elastic layer is compressed between the back plate and the display panel. The light guide plate is between the elastic layer and the adhesive layer. The adhesive layer is between the light guide plate and the cover plate, and includes a main body portion and an edge reinforcing portion surrounding the main body portion and connected to the light guide plate and the cover plate. The main body portion includes a first adhesive body disposed on the light guide plate and a second adhesive body stacked on the first adhesive body and the cover plate. An adhesion of the first adhesive body is different from an adhesion of the second adhesive body.
    Type: Application
    Filed: January 3, 2025
    Publication date: July 31, 2025
    Inventors: CHIN-YUAN CHANG, YIN-JEN LIN
  • Patent number: 12370236
    Abstract: Provided is a method for treating a SARS-CoV2 3CLpro-related disease in a subject in need thereof by blocking dimerization of 3C-like main protease (3CLpro) of the SARS-CoV2, including administering to the subject a first agent which binds to a first binding site of a SARS-CoV2 3CLpro complex and a second agent which binds to a second binding site of the SARS-CoV2 3CLpro complex, wherein the first binding site and the second binding site are functionally different sites in the three-dimensional structure of the SARS-CoV2 3CLpro complex. Also provided is a pharmaceutical combination including the first agent and the second agent for suppressing SARS-CoV2, thereby alleviating COVID-19.
    Type: Grant
    Filed: October 20, 2022
    Date of Patent: July 29, 2025
    Assignees: NATIONAL TSING HUA UNIVERSITY, PRAEXISIO TAIWAN, INC.
    Inventors: Lee-Wei Yang, Kun-Lin Tsai, Bang-Chieh Huang, Yi-Yun Cheng, Sui-Yuan Chang
  • Patent number: 12370766
    Abstract: A dosing system and method for delivery of contact lens formulation(s) to a contact lens forming mold. The system includes a carrier portion configured for holding a contact lens mold, and an alignment mandrel configured for retaining a lens formulation delivery device. The lens formulation delivery device is retained in a specified position relative to the contact lens mold for precise location of delivery of the lens formulation within the contact lens mold. A first lens formulation can be dosed to a center location in the mold, and a different second lens formulation can be dosed to a ring-shaped pattern around the center location, to form a contact lens having different center and edge characteristics.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: July 29, 2025
    Assignee: Alcon Inc.
    Inventors: Michelle Plavnik, Junhao Ge, Steve Yun Zhang, Ethan Leveillee, Yang Zheng, Yuan Chang
  • Publication number: 20250237845
    Abstract: An optical element driving mechanism is provided, which includes a first movable portion, a fixed portion, a first driving assembly, and a guiding assembly. The first movable portion is used for connecting to an optical element. The first movable portion is movable relative to the fixed portion. The first driving assembly is used for driving the first movable portion to move relative to the fixed portion. The guiding assembly is used for guiding the first movable portion to move relative to the fixed portion.
    Type: Application
    Filed: January 17, 2025
    Publication date: July 24, 2025
    Inventors: Chao-Yuan CHANG, Po-Xiang ZHUANG, Jui-Ta CHIEN, Wei-Jhe SHEN
  • Patent number: 12369294
    Abstract: A method includes providing a substrate having an epitaxial stack of layers including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. The substrate includes a first device region and a second device region. An etch process is performed to remove a first portion of the epitaxial stack of layers from the second device region to form a trench in the second device region. The removed first portion of the epitaxial stack of layers includes at least one semiconductor channel layer of the plurality of semiconductor channel layers. An epitaxial layer is formed within the trench in the second device region and over the second portion of the epitaxial stack of layers. A top surface of the epitaxial layer in the second device region is substantially level with a top surface of the epitaxial stack of layers in the first device region.
    Type: Grant
    Filed: February 14, 2022
    Date of Patent: July 22, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chao-Yuan Chang, Feng-Ming Chang, Jui-Wen Chang
  • Publication number: 20250232105
    Abstract: A method includes: receiving a layout of an integrated circuit; identifying, based on the layout, at least a first net and at least a second net, wherein the first net extends through the integrated circuit along a vertical direction, and the second net terminates at a middle portion of the integrated circuit along the vertical direction; dividing the integrated circuit into a plurality of grid units, wherein he first net is constituted by a first subset of the plurality of grid units, and the second net is constituted by a second subset of the plurality of grid units; estimating a first thermal conductivity of each of the first subsets of grid units; estimating a second thermal conductivity of each of the second subsets of grid units; and estimating an equivalent thermal conductivity of the integrated circuit based on combining the first thermal conductivity and the second thermal conductivity.
    Type: Application
    Filed: April 4, 2025
    Publication date: July 17, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yi Lin, Fong-yuan Chang, Po-Yu Chen, Po-Hsiang Huang, Chih-Wei Chang, Jyh Chwen Frank Lee
  • Publication number: 20250231371
    Abstract: A driving mechanism for moving an optical element is provided. The driving mechanism includes a fixed part, a movable part, and a driving assembly. The movable part is movably connected to the fixed part for holding the optical element. The driving assembly is configured for moving the movable part relative to the fixed part.
    Type: Application
    Filed: January 10, 2025
    Publication date: July 17, 2025
    Inventors: Chao-Yuan CHANG, Po-Xiang ZHUANG, Jui-Ta CHIEN, Wei-Jhe SHEN, Ko-Lun CHAO, Yi-Ho CHEN, Sin-Jhong SONG
  • Patent number: 12358245
    Abstract: Systems, devices, and methods are disclosed for fabricating a hybrid contact lens product having a lens insert embedded at a precisely controlled location within a lens body. A mold engagement and support base engages and retains a lens forming mold in a substantially fixed position. An insert placement and positioning device includes an insert pickup head with a contact face configured for releasable engagement of the lens insert and at least one suction opening in the contact face for applying suction to engage the insert on the contact face. A positioning housing interacts with the mold and/or the support base to provide precise locational positioning of the lens insert within the mold. A lens body forming material is delivered to the mold to encapsulate the lens insert.
    Type: Grant
    Filed: November 28, 2022
    Date of Patent: July 15, 2025
    Assignee: Alcon Inc.
    Inventors: Yang Zheng, Cornelius Daniel Niculas, Yuan Chang, Junhao Ge, Steve Yun Zhang, Justin Joel Aguayo, David Andrew Icenogle, Muhammad Waqas Asif, Daryl Reece
  • Patent number: 12362323
    Abstract: A die stack includes: a first die including a first semiconductor substrate; a first redistribution layer (RDL) structure disposed on a front surface of the first die and electrically connected to the first semiconductor substrate; a second die bonded to the front surface of the first die and including a second semiconductor substrate; a third die bonded to the front surface of the first die and including a third semiconductor substrate; a second RDL structure disposed on front surfaces of the second and third dies and electrically connected to the second and third semiconductor substrates; and a through dielectric via (TDV) structure extending between the second and third dies and electrically connected to the first RDL structure and second RDL structure. The second and third dies are disposed in a plane that extends perpendicular to a vertical stacking direction of the die stack.
    Type: Grant
    Filed: August 28, 2021
    Date of Patent: July 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Jen-Yuan Chang, Chia-Ping Lai, Chien-Chang Lee
  • Patent number: 12364019
    Abstract: Devices and methods for manufacturing a deep trench capacitor fuse for high voltage breakdown defense. A semiconductor device comprising a deep trench capacitor structure and a transistor structure. The transistor structure may comprise a base, a first terminal formed within the base, and a second terminal formed within the base. The first terminal and the second terminal may be formed by doping the base. The deep trench capacitor structure may comprise a first metallic electrode layer and a second metallic electrode layer. The first terminal may be electrically connected to the first metallic electrode layer, and the second terminal may be electrically connected to the second metallic electrode layer.
    Type: Grant
    Filed: January 31, 2024
    Date of Patent: July 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventor: Jen-Yuan Chang
  • Patent number: 12360289
    Abstract: The invention is directed to an embedded hydrogel contact lens, which comprises an insert sandwiched between two layers of hydrogel materials and can be produced according to a cast molding method including the procedures involving two females halves (FC1 and FC2) and two male halves (BC1 and BC2) and three consequential molding steps involving three molding assemblies: the 1st one formed between FC1 and BC1 for molding an insert; the 2nd one formed between FC1 and BC2 for molding a lens precursor having the molded insert embedded in a layer of a hydrogel material in a way that the front surface of the molded insert merges with the convex surface of the lens precursor; and the 3rd one formed between FC2 and BC2 for molding an embedded hydrogel contact of the invention.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: July 15, 2025
    Assignee: Alcon Inc.
    Inventors: Yuan Chang, Junhao Ge, Ying Pi, Cornelius Daniel Niculas, Yang Zheng, Steve Yun Zhang, Michelle Plavnik, Ethan Leveillee, Jing Cheng, Augustine Twum Kumi
  • Publication number: 20250226091
    Abstract: A method for establishing an artificial intelligence prediction model that integrates with a large language model (LLM) in the field of artificial intelligence is provided. The method for establishing the artificial intelligence prediction model includes the creation of the prediction model, obtaining predictions using the model, interpreting the results using SHAP analysis, and leveraging a large language model to overcome the format limitations encountered when dealing with input and output data. A system of an artificial intelligence prediction model is also provided.
    Type: Application
    Filed: February 28, 2024
    Publication date: July 10, 2025
    Inventors: Chia-Yuan Chang, Chen-Hwa Sung, Tzu-Hsiang Yang, Chien-Yu Huang, Chu-Sheng Tan
  • Publication number: 20250226683
    Abstract: An electronic device and a power supply optimization method thereof are provided. The method includes: negotiating with a power adapter through a power control protocol in a power connection state to obtain a power profile; determining whether the power adapter supports a variable charging power adjustment function according to the power profile; when the power adapter supports the variable charging power adjustment function, determining whether a stored power of a battery module is less than a power threshold; when the stored power is less than the power threshold, executing one or more of a constant current test, a constant voltage test, and a power transmission test to select an algorithm for controlling a power supply behavior of the power adapter from multiple algorithms.
    Type: Application
    Filed: November 3, 2024
    Publication date: July 10, 2025
    Applicant: ASUSTeK COMPUTER INC.
    Inventors: Po-Chun Chen, Chih-Hung Lee, Chia-Yuan Chang, Shih-Teng Chiu
  • Publication number: 20250215292
    Abstract: An adhesive and multilayer structure are provided. The adhesive includes a polyimide, wherein the polyimide is a reaction product of a reactant (a) and a reactant (b). The reactant (a) is a first diamine or the reactant (a) includes of a first diamine and a second diamine, and the reactant (b) includes of a first dianhydride and a second dianhydride. The first diamine is a diphenyl-ether-moiety-containing diamine, the first dianhydride is a diphenyl-ether-moiety-containing dianhydride, the second diamine is not a diphenyl-ether-moiety-containing diamine, and the second dianhydride is not a diphenyl-ether-moiety-containing dianhydride. The total weight percentage of the first diamine and the first dianhydride is 55 wt % to 94 wt %, based on the total weight of the reactant (a) and the reactant (b).
    Type: Application
    Filed: August 21, 2024
    Publication date: July 3, 2025
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jauder Jeng, Yuan-Chang Huang, Kuan-Wei Chen, Jheng-Ying Li
  • Publication number: 20250219292
    Abstract: Disclosed is a dual-band dipole antenna including a dielectric carrier with a first surface, a first radiator, a second radiator, a coupled radiator, a coaxial cable and a balun line. The first radiator and the second radiator in opposite areas of the first surface have different structural shapes. The coupled radiator on the first surface extends from the second radiator toward the first radiator. There is a coupling slot between the coupled radiator and the first radiator. An inner conductor and an outer conductor of the coaxial cable are electrically connected to the second radiator and the first radiator respectively. The balun line disposed on the first surface has a serpentine structure, and is connected to the first radiator and the second radiator. The first radiator, the second radiator and the coupled radiator are configured to generate a first resonance mode, a second resonance mode and a third resonance mode.
    Type: Application
    Filed: September 10, 2024
    Publication date: July 3, 2025
    Applicant: LUXSHARE PRECISION INDUSTRY COMPANY LIMITED
    Inventors: Yao-Yuan CHANG, Yu-Tsung WANG, Wei-Hsin CHEN
  • Publication number: 20250218876
    Abstract: A control circuit is included in a first die of a stacked semiconductor device. The first die further includes a transistor that is electrically connected to the control circuit. The transistor is configured to be controlled by the control circuit to selectively block a die-to-die interconnect. In this way, the die-to-die interconnect may be selectively blocked to isolate the first die and a second die of the stacked semiconductor device for independent testing after bonding. This may increase the effectiveness of a testing to identify and isolate defects in the first die or the second die, which may further increase the effectiveness of performing rework or repair on the stacked semiconductor device.
    Type: Application
    Filed: March 20, 2025
    Publication date: July 3, 2025
    Inventor: Jen-Yuan CHANG
  • Patent number: 12349330
    Abstract: The present disclosure describes a memory structure including a memory cell array. The memory cell array includes memory cells and first n-type wells extending in a first direction. The memory structure also includes a second n-type well formed in a peripheral region of the memory structure. The second n-type well extends in a second direction and is in contact with a first n-type well of the first n-type wells. The memory structure further includes a pick-up region formed in the second n-type well. The pick-up region is electrically coupled to the first n-type well of first n-type wells.
    Type: Grant
    Filed: April 28, 2022
    Date of Patent: July 1, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chuan Yang, Chao-Yuan Chang, Shih-Hao Lin, Chia-Hao Pao, Feng-Ming Chang, Lien-Jung Hung, Ping-Wei Wang
  • Patent number: 12347792
    Abstract: A device includes a substrate, at least one first dielectric layer on the substrate and including a first dielectric constant, at least one second dielectric layer on the at least one first dielectric layer and including a second dielectric constant greater than the first dielectric constant, and a dummy pattern including a first conductive pattern having a first pattern density in the at least one first dielectric layer and a second conductive pattern in the at least one second dielectric layer and comprising a second pattern density. The first pattern density is equal to or greater than the second pattern density.
    Type: Grant
    Filed: October 17, 2023
    Date of Patent: July 1, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Jen-Yuan Chang