Abstract: Molybdenum-silicon carbide composite powder and a fabrication method thereof are provided. The molybdenum-silicon carbide composite powder includes a micro-scale silicon carbide powder and a plurality of submicron-scale molybdenum particles bonding on the surface of the silicon carbide powder.

Abstract: Molybdenum-silicon carbide composite powder and a fabrication method thereof are provided. The molybdenum-silicon carbide composite powder includes a micro-scale silicon carbide powder and a plurality of submicron-scale molybdenum particles bonding on the surface of the silicon carbide powder.

Abstract: The disclosure provides a thermoelectric module and a method for fabricating the same. The thermoelectric module includes a plurality of p-type and n-type segmented thermoelectric elements disposed in a planar array, wherein the p-type and n-type segmented thermoelectric elements are coupled in series via a plurality of first electrodes and second electrodes. Each segmented thermoelectric element includes at least two vertically homogeneous thermoelectric segments, and at least two adjacent thermoelectric segments have a fusion-bonding layer therebetween. The fusion-bonding layer includes a tin-containing material and a plurality of spacers disposed among the tin-containing material, wherein the melting point of the spacers is higher than the liquidus temperature of the tin-containing material.

Abstract: The invention provides a metal thermal interface material (TIM) with through-holes in its body and/or zigzags or wave shapes on its border, which is suitable for use at thermal interfaces of a thermal conduction path from an integrated circuit die to its associated heat sink in a packaged microelectronic component. The invention also includes a thermal module and a packaged microelectronic component including the metal thermal interface material.

Abstract: A thermoelectric module includes a first and a second substrates, plural thermoelectric elements, plural first and second metal electrodes, plural first and second solder layers, and spacers. The thermoelectric elements are disposed between the first and second substrates, and each pair includes a P-type and an N-type thermoelectric elements. An N-type thermoelectric element is electrically connected to the other P-type thermoelectric element of the adjacent pair of thermoelectric element by the second metal electrode. The first metal electrodes and the lower end surfaces of the P/N type thermoelectric elements are jointed by the first solder layers. The second metal electrodes and the upper end surfaces of the P/N type thermoelectric elements are jointed by the second solder layers. The spacers are positioned at one of the first and second solder layers. The melting point of the spacer is higher than the liquidus temperatures of the first and second solder layers.

Abstract: A melting temperature adjustable metal thermal interface material (TIM) and a packaged semiconductor including thereof are provided. The metal TIM includes about 20-98 wt % of In, about 0.03-4 wt % of Ga, and at least one element of Bi, Sn, Ag and Zn. The metal TIM has an initial melting temperature between about 60-144° C.

Abstract: A melting temperature adjustable metal thermal interface material (TIM) and a packaged semiconductor including thereof are provided. The metal TIM includes about 20-98 wt % of In, about 0.03-4 wt % of Ga, and at least one element of Bi, Sn, Ag and Zn. The metal TIM has an initial melting temperature between about 60-144° C.

Abstract: A melting temperature adjustable metal thermal interface material (TIM) is provided. The metal TIM includes In, Bi, Sn, and Ga. A content of Ga ranges from 0.01 wt % to 3 wt %. The metal TIM has an initial melting temperature lower than 60° C. and has no element hazardous to the environment.

Abstract: The invention provides a metal thermal interface material (TIM) with through-holes in its body and/or zigzags or wave shapes on its border, which is suitable for use at thermal interfaces of a thermal conduction path from an integrated circuit die to its associated heat sink in a packaged microelectronic component. The invention also includes a thermal module and a packaged microelectronic component including the metal thermal interface material.

Abstract: A melting temperature adjustable metal thermal interface material (TIM) is provided. The metal TIM includes In, Bi, Sn, and Ga. A content of Ga ranges from 0.01 wt % to 3 wt %. The metal TIM has an initial melting temperature lower than 60° C. and has no element hazardous to the environment.

Abstract: A two-step two-piece high-pressure casting process for the fabrication of a scroll member containing a generally circular end plate, a scroll hub on one side of the end plate and an involute wrap on the other side thereof. The involute wrap is pre-fabricated from a wear-resistant alloy or aluminum alloy based composite having low liquidus temperature which is placed inside the involute groove of a scroll mold. The scroll mold contains a mobile scroll mold and a stationary scroll mold. The mobile scroll mold contains a first cavity having the shape of the scroll hub; whereas the stationary scroll mold contains a second cavity having the shape of the circular end plate and an involute groove disposed below the second cavity.