Abstract: A light shielding sheet for a lens is provided, including: a metal substrate, including: a first surface; a second surface opposing the first surface; a first through light hole being in communication with the first surface and having hole radiuses gradually decreasing in a direction from the first surface to the second surface, a ratio of a depth of the first through light hole to a difference between two of the hole radiuses at two ends of the first through light hole being less than or equal to 0.5; and a second through light hole being in communication with the first through light hole and the second surface; and a light extinction film covering the first surface, the second surface, a hole wall of the first through light hole and a portion of a hole wall of the second through light hole of the metal substrate.

Abstract: A light shielding sheet for a lens is provided, including: a metal substrate, including: a first surface; a second surface opposing the first surface; a first through light hole being in communication with the first surface and having hole radiuses gradually decreasing in a direction from the first surface to the second surface, a ratio of a depth of the first through light hole to a difference between two of the hole radiuses at two ends of the first through light hole being less than or equal to 0.5; and a second through light hole being in communication with the first through light hole and the second surface; and a light extinction film covering the first surface, the second surface, a hole wall of the first through light hole and a portion of a hole wall of the second through light hole of the metal substrate.

Abstract: A phase-change recording film with stable crystallization rate and a composite target for producing the film are composed of 10 to 50 atomic percent of phase-change material containing Te or Sb and 50 to 90 atomic percent of dielectric material. Another target for producing the film is composed of dielectric material and a phase-change material containing Te or Sb attached to the dielectric material. A co-sputtering process for producing the film uses a target made of dielectric material and a target made of phase-change material containing Te or Sb to co-sputter. Because the crystallization rate of the phase-change recording film does not change as the thickness of phase-change recording film varies, manufacturing the phase-change recording film does not require to be precisely controlled unduly.

Abstract: An optical information storage medium includes a first substrate, a first recording stack layer, a second substrate, and a first hard coating layer. The first recording stack layer is disposed above the first substrate. The second substrate is disposed above the first recording stack layer, and the first hard coating layer is disposed on one surface of the second substrate.

Abstract: An optical information storage medium includes a first substrate, a first recording stack layer and a second substrate. The first recording stack layer is disposed above the first substrate. The second substrate is disposed above the first recording stack layer, and the hardness of the second substrate is higher than the first substrate.

Abstract: A method for forming an ultra-shallow junction in a semiconductor substrate is provided. A semiconductor substrate having a top surface is prepared. A dielectric layer is then formed on the top surface. A first ion implantation process is carried out to implant a plurality of heavy ions into the dielectric layer at a first ion range Rp. Thereafter, a second ion implantation process is carried out to implant a plurality of less-heavy ions into the dielectric layer at a second ion range Rp. The second ion range Rp is smaller than said first ion range Rp. A portion of the plural less-heavy ions are decelerated by the previously implanted heavy ions and are implanted into the semiconductor substrate, thereby forming a ultra-shallow junction containing the less-heavy ions. Subsequently, the dielectric layer is completely removed.

Abstract: A method for forming an ultra-shallow junction in a semiconductor substrate is provided. A semiconductor substrate having a top surface is prepared. A dielectric layer is then formed on the top surface. A first ion implantation process is carried out to implant a plurality of heavy ions into the dielectric layer at a first ion range Rp. Thereafter, a second ion implantation process is carried out to implant a plurality of less-heavy ions into the dielectric layer at a second ion range Rp. The second ion range Rp is smaller than said first ion range Rp. A portion of the plural less-heavy ions are decelerated by the previously implanted heavy ions and are implanted into the semiconductor substrate, thereby forming a ultra-shallow junction containing the less-heavy ions. Subsequently, the dielectric layer is completely removed.

Abstract: A stamper forming method includes following steps of forming a photoresist layer on a substrate, forming a patterned semi-blocked layer on the photoresist layer, exposing the photoresist layer with a light beam, developing the photoresist layer, and sputtering towards the photoresist layer to form a metal layer. In this case, the semi-blocked layer decays the intensity of the light beam, and partially blocks the light beam.