Patents by Inventor Yuan-Chieh Huang

Yuan-Chieh Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240107599
    Abstract: A method to establish and activate an MA PDU session for data transmission over a selected access is proposed. UE initiates a UE-requested PDU session establishment procedure. Once the UE receives a PDU SESSION ESTABLISHMENT ACCEPT message with ATSSS container IE, the UE can consider the MA PDU session has been activated and user plane resources are successfully established on the selected access. A method to convert an SA PDU session to an MA PDU session for data transmission over a selected access is proposed. UE initiates a UE-requested PDU session modification procedure. Once the UE receives a PDU SESSION MODIFICATION COMMAND message with ATSSS container IE, the UE can consider the MA PDU session has been converted from the SA PDU session and user plane resources are successfully established on the selected access.
    Type: Application
    Filed: December 7, 2023
    Publication date: March 28, 2024
    Inventors: Yuan-Chieh Lin, Chien-Chun Huang Fu
  • Patent number: 11923405
    Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chih-Fan Huang, Hung-Chao Kao, Yuan-Yang Hsiao, Tsung-Chieh Hsiao, Hsiang-Ku Shen, Hui-Chi Chen, Dian-Hau Chen, Yen-Ming Chen
  • Publication number: 20120063865
    Abstract: The present invention discloses a screw, which comprises a shaft, a head and a thread. The shaft has an awl on one end thereof. The head is formed on the other end of the shaft and has an engagement groove. The thread is formed on the surface of the shaft and spirally extends from the awl to the head. The thread has two surfaces whose edges are connected with each other to form a cutting edge. The thread includes at least one receiving groove having a guiding face, a collecting face and a connecting face. The connecting face connects the guiding face and the collecting face to form a debris-receiving space. The debris-receiving surface penetrates the two surfaces of the thread. The connecting face has a crushing portion with a ragged surface. Thereby, the screw can provide higher locking strength.
    Type: Application
    Filed: November 23, 2010
    Publication date: March 15, 2012
    Applicant: Sheh Fung Screws Co., Ltd.
    Inventors: Yuan-Chieh Huang, Teh-Ling Chen