Abstract: A method includes the following steps. A target layer is formed on a substrate. A resist layer is formed on the target layer. The resist layer is exposed such that secondary electrons are produced in the resist layer. The secondary electrons are terminated using an additive. The resist layer is developed. The target layer is etched using the developed resist layer as a mask.

Abstract: A method of manufacturing a semiconductor device includes the following operations. A metal oxide photoresist layer is formed over a target layer. The metal oxide photoresist layer comprises a metal oxide core with organic ligands, a metal oxide framework with organic ligands, or a combination thereof. The metal oxide photoresist layer is exposed to an extreme ultraviolet radiation. The metal oxide photoresist layer is treated with a ligand leaving promoter. The metal oxide photoresist layer is developed to form a patterned photoresist. The target layer is etched by using the patterned photoresist as an etching mask.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, exposing the photoresist layer to an EUV radiation, developing the photoresist layer to form a patterned photoresist, forming a coating layer on the patterned photoresist, and after forming the coating layer on the patterned photoresist, etching the substrate using a combination of the coating layer and the patterned photoresist as an etching mask.

Abstract: A method includes depositing a middle layer over a substrate. The middle layer includes sacrificial additives. A heating process is performed to cross-link the middle layer. The sacrificial additives are floated onto a top surface of the middle layer. The sacrificial additives are removed from the middle layer after the heating process is performed. A photoresist layer is deposited over the middle layer. The photoresist layer is exposed to a radiation beam. The photoresist layer is developed after the photoresist layer is exposed.