Abstract: A multi-power system for providing electrical energy includes a fuel cell unit, a lithium-ion cell unit, and a control unit. The control unit stores a power optimization data sheet that includes multiple power parameter sets, each including a first optimal power and a second optimal power. The control unit is configured to, when operating in a specific mode, select one of the power parameter sets as a selected set, control the fuel cell unit to operate at the first optimal power included in the selected set, control the lithium-ion cell unit to operate at the second optimal power included in the selected set, and control the fuel cell unit and the lithium-ion cell unit to cooperatively output electricity.

Abstract: The present disclosure provides a method of making a semiconductor device. The method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material alternatively stacked on the substrate; patterning the semiconductor stack and the substrate to form a trench and an active region being adjacent the trench; epitaxially growing a liner of the first semiconductor material on sidewalls of the trench and sidewalls of the active region; forming an isolation feature in the trench; performing a rapid thermal nitridation process, thereby converting the liner into a silicon nitride layer; and forming a cladding layer of the second semiconductor material over the silicon nitride layer.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a method includes receiving a workpiece comprising a substrate, an active region protruding from the substrate, and a dummy gate structure disposed over a channel region of the active region. The method also includes forming a trench in a source/drain region of the active region, forming a sacrificial structure in the trench, conformally depositing a dielectric film over the workpiece, performing a first etching process to etch back the dielectric film to form fin sidewall (FSW) spacers extending along sidewalls of the sacrificial structure, performing a second etching process to remove the sacrificial structure to expose the trench, forming an epitaxial source/drain feature in the trench such that a portion of the epitaxial source/drain feature being sandwiched by the FSW spacers, and replacing the dummy gate structure with a gate stack.

Abstract: A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.

Abstract: A method includes forming a p-well and an n-well in a substrate. The method further includes forming a stack of interleaving first semiconductor layers and second semiconductor layers over the p-well and the n-well, the first semiconductor layers having a first thickness and the second semiconductor layers having a second thickness different than the first thickness. The method further includes annealing the stack of interleaving semiconductor layers. The method further includes patterning the stack to form fin-shaped structures including a first fin-shaped structure over the n-well and a second fin-shaped structure over the p-well. The method further includes etching to remove the second semiconductor layers from the first and second fin-shaped structures, where the first semiconductor layers have a different thickness within each of the first and second fin-shaped structures after the etching. The method further includes forming a metal gate over the first and second fin-shaped structures.

Abstract: Methods, software, apparatus, and systems for reading a recordable optical disc. The method generally comprises the steps of (a) determining whether a lead-in area on the disc contains valid lead-in data and, when the lead-in area does not contain valid lead-in data, and (b) searching an area on the disc (e.g., searching for directory data, such as RSAT or VAT data). The present invention advantageously allows a disc playback device (e.g., a DVD player) to locate disc type information even on discs that are unfinalized (e.g., where no lead-in data has been recorded in the lead-in area of the disc).

Abstract: A pneumatic tool includes a housing of a cylinder, a rotor and at least a blade. The housing of the cylinder has an inner wall. The rotor is disposed inside the housing of the cylinder. The rotor has at least a slit. The blade is movably inserted into the slit. The blade includes a solid lubricant, at least an oil-bearing trough and a counterweight. The solid lubricant is disposed on a contacting surface near the inner wall. When the blade is flung out from the slit, the solid lubricant is against the inner wall. The oil-bearing trough is disposed on the contacting surface for storing oil to lubricate the contacting surface and the inner wall. The counterweight is disposed inside the blade near the inner wall for increasing a force to fling the blade out from the slit.

Abstract: Methods, software, apparatus, and systems for reading a recordable optical disc. The method generally comprises the steps of (a) determining whether a lead-in area on the disc contains valid lead-in data and, when the lead-in area does not contain valid lead-in data, and (b) searching an area on the disc (e.g., searching for directory data, such as RSAT or VAT data). The present invention advantageously allows a disc playback device (e.g., a DVD player) to locate disc type information even on discs that are unfinalized (e.g., where no lead-in data has been recorded in the lead-in area of the disc).

Abstract: Methods and systems for controlling a user interface of a consumer electronic device. An exemplary embodiment of a method for controlling a user interface of a consumer electronic device, including a plurality of I/O interfaces for communication with a plurality of data sources, is disclosed. The method comprises: utilizing the user interface to display a content list of a first data source present in the consumer electronic device if the first data source is active; and when a second data source is added to the consumer electronic device and then actively selected, utilizing the same user interface to display a content list of the second data source.

Abstract: A lock structure having multiple anti-theft measures includes a lock body, a key and an electronic anti-theft device. The invention is characterized that, the lock body has an inner tube internally disposed with three spring pegs having different lengths and two lock cylinder pegs; outer walls of the spring pegs are disposed with protruding posts for corresponding with depths of grooves at a front end of the key; the lock cylinder pegs are connected with a central lock cylinder; rear ends of the five pegs are all connected with the electronic anti-theft device; and a long needle and a middle needle projecting from a front end of the key are supported against the lock cylinder. Using the structure, when the key having an exact length is inserted in an appropriate direction into the lock body, the lock structure is successfully unlocked without triggering the electronic anti-theft device.