Abstract: A noise elimination device for a Class-D audio amplifier includes a residual signal detector and a multiplexer, wherein the multiplexer is electrically connected with a sigma-delta modulator (SDM) and a pulse width modulator (PWM) of the Class-D audio amplifier and the residual signal detector. The residual signal detector is configured to detect whether an input signal of the Class-D audio amplifier is residual. The multiplexer is configured to output zero data into the pulse width modulator when the residual signal detector detects that the input signal of the Class-D audio amplifier is residual.

Abstract: Embodiments of the present disclosure provide a bond stage for bonding a semiconductor integrated circuit (IC) die. The bond stage includes a bonding platform having a top surface and a bottom surface opposing the top surface, a first actuator operable to tilt the bonding platform about a first rotation axis, and a plurality of contact sensors disposed at the bonding platform.

Abstract: Circuit, method for audio signal processing with excursion estimation compensation, and non-transitory storage medium are provided. The circuit comprises a delay circuit, compensation filter, excursion estimator, peak detector, gain determination circuit, and gain adjustment circuit. The delay circuit is for delaying a digital audio signal to output a delayed digital audio signal. The compensation filter is for generating a compensated digital audio signal according to the digital audio signal for excursion estimation compensation for a speaker type. The excursion estimator is for determining an estimated excursion signal for the speaker type according to the compensated digital audio signal. The gain determination circuit is for generating a gain setting signal according to the estimated excursion signal and a threshold value. The gain adjustment circuit is for generating an adjusted digital audio signal according to the gain setting signal and delayed digital audio signal.

Abstract: Disclosed herein are system, apparatus, article of manufacture, method and/or computer program product embodiments, and/or combinations and sub-combinations thereof, for dynamic tone mapping of video content. An example embodiment operates by identifying, by a dynamic tone mapping system executing on a media device, characteristics of a first video signal having a first dynamic range based on a frame-by-frame analysis of the first video signal. The example embodiment further operates by modifying, by the dynamic tone mapping system, a tone mapping curve based on the characteristics of the first video signal to generate a modified tone mapping curve. Subsequently, the example embodiment operates by converting, by the dynamic tone mapping system, the first video signal based on the modified tone mapping curve to generate a second video signal having a second dynamic range that is less than the first dynamic range.

Abstract: A bonding apparatus with a bonding head having vacuum channels and switchable channels, and the method of forming the same are provided. The bonding apparatus may include a vacuum pump, a blower, a controller communicatively coupled to the vacuum pump and the blower, and a bonding head. The bonding head may include a main body, a first vacuum channel in the main body, wherein the first vacuum channel is connected to the vacuum pump, and a first switchable channel in the main body, wherein the first switchable channel is connected to the vacuum pump and the blower.

Abstract: A die bonding tool includes a bond head having a moveable component. The moveable component may be moveable between an extended position in which a lower surface of the moveable component protrudes below a lower surface of the bond head and a retracted position in which the lower surface of the moveable component does not protrude below the lower surface of the bond head. The moveable component may be used to control a shape of a semiconductor die secured to the lower surface of the bond head during a process of bonding the semiconductor die to a substrate. Accordingly, void areas and other bonding defects may be avoided and the bond formed between the semiconductor die and the target substrate may be improved.

Abstract: A BSR method, adapted for UE is provided, including: receiving one or more preset configurations of one or more Buffer Size Tables (BSTs) from a network device, wherein the one or more BSTs are candidate BSTs to be selected as the target BST to the LCG; and in response to identifying the target BST used for the LCG, signalling an advanced BST indication to the network device, wherein the advanced BST indication is configured to record an advanced BST index and at least one of following information: a target LCID, and a target eLCID, wherein the network device queries a target Buffer Size (BS) range in the target BST according to the received advanced BST indication, and the network device grants a UL resource for the LCG based on the target BS range, wherein the target BS range is identified by a BS index of the target BST.

Abstract: A bonded assembly may be formed by performing a chip plasma clean process on a semiconductor chip; generating at least one chip infrared image of a cleaned side of the semiconductor chip; measuring an average emissivity of at least one metallic region in the at least one chip infrared image; performing a subsequent processing step selected from a bonding step and an alternative processing step based on the measured average emissivity. The bonding step is performed if the measured average emissivity is less than a predetermined emissivity threshold value. The alternative processing step is performed if the measured average emissivity is greater than the predetermined emissivity threshold value. The alternative processing step may be selected from an additional clean step and an additional inspection step.

Abstract: A pharmaceutical composition for treating neurodegenerative diseases of the brain is provided and including cells encapsulated by microtubular array membranes (MTAMs). The material of the microtubular array membrane is Polysulfone (PSF) or PLGA-PLLA copolymer. The cells include hybridoma cells capable of secreting anti-Tau antibodies or human umbilical cord mesenchymal stem cells (hUC-MSCs). The pharmaceutical composition could be implanted into a living body for treating neurodegenerative diseases of the brain in a subject in need thereof, in order to improve the cognitive dysfunction.

Abstract: A device includes a carbon nanotube having a channel region and dopant-free source/drain regions at opposite sides of the channel region, a first metal oxide layer interfacing a first one of the dopant-free source/drain regions of the carbon nanotube, a second metal oxide layer interfacing a second one of the dopant-free source/drain regions of the carbon nanotube and a gate structure over the channel region of the carbon nanotube, and laterally between the first metal oxide layer and the second metal oxide layer.

Abstract: A bonded assembly may be formed by: providing a substrate and a semiconductor chip in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; disposing the semiconductor chip on the substrate; performing a plasma treatment process on a copper-containing surface of a chip bonding pad on the semiconductor chip in the low-oxygen ambient by directing a plasma jet to the chip bonding pad; and attaching a bonding wire to the semiconductor chip and to the substrate such that a first end of the bonding wire is attached to the copper-containing surface and a second end of the bonding wire is attached to a substrate bonding pad on the substrate.

Abstract: A bonded assembly may be formed by providing at least a first packaging substrate in a low-oxygen ambient; providing at least a first semiconductor package in the low-oxygen ambient; performing a first plasma package-treatment process on the first semiconductor package in the low-oxygen ambient by directing at least one first plasma jet to first solder material portions bonded to the first semiconductor package; and bringing the first solder material portions onto, or in proximity to, first substrate-side bonding structures located on the first packaging substrate while the at least one first plasma jet is directed to the first solder material portions. The first substrate-side bonding structures are treated with the first plasma jet. The first semiconductor package is bonded to the first packaging substrate while, or after, the first substrate-side bonding structures are treated with the first plasma jet.

Abstract: A bonded assembly may be formed by providing a wafer comprising at least a first packaging substrate and a second packaging substrate in a low-oxygen ambient; performing a first plasma package-treatment process on the first semiconductor package in the low-oxygen ambient while performing a first substrate-treatment process on the first packaging substrate in a low-oxygen ambient having an oxygen partial pressure that is lower than 17 kPa; and performing a second plasma package-treatment process on the second semiconductor package while performing a second substrate-treatment process on the second packaging substrate and while bonding the first semiconductor package to the first packaging substrate.

Abstract: A PDCP SDU discard method, adapted for a UE, is provided. The method includes: setting one or more discard timers based on a RRC configuration transmitted from a network device; receiving a PDCP SDU from a upper layer, wherein the PDCP SDU corresponding to a PDU belonging to a PDU Set; and in response to receiving a PSI-based SDU discard indication from the network device, determining whether to discard the PDCP SDU or not according to a PSI of the PDU Set and a target discard timer. The step of determining whether to discard the PDCP SDU according to the PSI of the PDU Set and the target discard timer comprises: identifying the PSI of the PDU Set; determining the target discard timer corresponding to the PSI among the one or more discard timers; and discarding the PDCP SDU when the target discard timer is expired.

Abstract: A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.

Abstract: A die bonding tool includes a bond head that secures a semiconductor die against a planar surface of the bond head, an actuator system that moves the bond head and the semiconductor die towards a surface of a target substrate, and at least one contact sensor configured to detect an initial contact between a first region of the semiconductor die and the surface of the target substrate, where in response to detecting the initial contact between the semiconductor die and the target substrate, the actuator tilts the planar surface of the bond head and the semiconductor die to bring a second region of the semiconductor die into contact with the surface of the target substrate and thereby provide improved contact between the semiconductor die and the target substrate and more effective bonding including instances where the planar surface of the bond head and the target substrate surface are not parallel.

Abstract: A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.

Abstract: A method of logical channel prioritization and a device thereof are provided.

Abstract: A method and a user equipment for reporting a remaining delay budget information are provided. The method includes: receiving a radio resource control configuration, wherein the radio resource control configuration indicates the user equipment to report the remaining delay budget information of a logical channel or a logical channel group through a status report message; determining whether a triggering condition is met, wherein the triggering condition is associated with a threshold of remaining delay budget; and in response to the triggering condition being met, transmitting the status report message including the remaining delay budget information, wherein the remaining delay budget information indicates at least one remaining delay budget and at least one associated buffer size.

Abstract: Disclosed herein are system, apparatus, article of manufacture, method and/or computer program product embodiments, and/or combinations and sub-combinations thereof, for dynamic tone mapping of video content. An example embodiment operates by identifying, by a dynamic tone mapping system executing on a media device, characteristics of a first video signal having a first dynamic range based on a frame-by-frame analysis of the first video signal. The example embodiment further operates by modifying, by the dynamic tone mapping system, a tone mapping curve based on the characteristics of the first video signal to generate a modified tone mapping curve. Subsequently, the example embodiment operates by converting, by the dynamic tone mapping system, the first video signal based on the modified tone mapping curve to generate a second video signal having a second dynamic range that is less than the first dynamic range.