Abstract: A method of manufacturing a substrate for epitaxy is disclosed, including the following steps. Dispose a buffer layer on a base, wherein the buffer layer is constituted by stacked nitride layers formed by the process of atomic layer deposition. The buffer layer could alternatively be constituted by stacked at least one first buffer sub-layer and at least one second buffer sub-layer, wherein the first and second buffer sub-layers are respectively constituted by layered first nitride layers and layered second nitride layers, which are both formed by the process of atomic layer deposition. While forming the buffer layer, perform ion bombardment each time a single layer of the nitride layer, the first nitride layer, or the second nitride layer is formed. Whereby, the base and the buffer layer constitute the substrate for epitaxy, which effectively enhances the crystallinity of the buffer layer.