Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: A method to establish and activate an MA PDU session for data transmission over a selected access is proposed. UE initiates a UE-requested PDU session establishment procedure. Once the UE receives a PDU SESSION ESTABLISHMENT ACCEPT message with ATSSS container IE, the UE can consider the MA PDU session has been activated and user plane resources are successfully established on the selected access. A method to convert an SA PDU session to an MA PDU session for data transmission over a selected access is proposed. UE initiates a UE-requested PDU session modification procedure. Once the UE receives a PDU SESSION MODIFICATION COMMAND message with ATSSS container IE, the UE can consider the MA PDU session has been converted from the SA PDU session and user plane resources are successfully established on the selected access.

Abstract: A computer system (such as a controller) that selects channels and/or channel widths for use during communication in a shared band of frequencies is described. During operation, the computer system may receive, associated with access points in a region (such as a zone), information specifying unavailable channels associated with the shared band of frequencies, where the unavailable channels are currently used by the access points. For example, the information may be included in access-point status reports from the access points. Then, based at least in part on the unavailable channels, the computer system may determine the channels and/or the channel widths for use by the access points during communication in the shared band of frequencies in the region. Next, the computer system may provide, addressed to the access points, second information specifying the determined channels and/or the channel width.

Abstract: A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A wafer container includes a frame, a door and at least a pair of shelves. The frame has opposite sidewalls. The pair of the shelves are respectively disposed and aligned on the opposite sidewalls of the frame. Various methods and devices are provided for holding at least one wafer to the shelves during transport.

Abstract: A wireless transmission module for transmitting energy or signals includes a first magnetically conductive element, a first coil assembly and a first adhesive element. The first coil assembly and the first magnetically conductive element are arranged along a main axis. The first adhesive element is configured to be adhered to the first coil assembly and the first magnetic conductive element. The first adhesive element is disposed between the first coil assembly and the first magnetically conductive element.

Abstract: A transaction merging method for a first electronic device and a second electronic device. The transaction merging method comprises: (a) receiving a plurality of input transactions from the first electronic device; (b) setting a merge condition of the input transactions according to a transmission condition between the first electronic device and the second electronic device; (c) merging the input transactions according to the merge condition to generate at least one transaction group; and (d) transmitting the transaction group to the second electronic device.

Abstract: A reconfigurable intelligent surface includes a radiant layer, a sensing feeding circuit layer, a processing layer and a controlling circuit layer. The radiant layer includes at least two antennas and a plurality of reflecting units. Each of the at least two antennas is configured for sensing a polarization, a frequency or a direction angle of an incident electromagnetic wave. The reflecting units are arranged to form a reflecting surface. The sensing feeding circuit layer is signally connected to the antennas. The processing layer is signally connected to the sensing feeding circuit layer, and the processing layer is configured to produce a controlling signal corresponding thereto. The controlling circuit layer is signally connected to the radiant layer and the processing layer, wherein the controlling circuit layer receives the controlling signal and controls the reflecting units according to the controlling signal to adjust and form a reflecting electromagnetic wave.

Abstract: A method for forming a semiconductor device includes followings. A metal layer is formed to embedded in a first dielectric layer. An etch stop layer is formed over the metal layer and the first dielectric layer. A second dielectric layer is formed over the etch stop layer. A portion of the second dielectric layer is removed to expose a portion of the etch stop layer and to form a via by a dry etching process. The portion of the etch stop layer exposed by the second dielectric layer is removed to expose the metal layer and to form a damascene cavity by a wet etching process. A damascene structure is formed in the damascene cavity.

Abstract: A mask storing device comprises a storing unit, a hook member, a stopper portion, a positioning member, and a flexible stopper member for storing a mask. A method to store a mask, which functions as a safe and hygienicway to allow users to store and take out the mask safely by only holding ear loops without touching the body of the mask.

Abstract: A system for diffraction of an electromagnetic wave includes a substrate, a transmission unit, and a plurality of antennas. The substrate is made of a second medium. The transmission unit is disposed on the substrate. The transmission unit has a plurality of transmission lines. Each of the transmission lines has a transmission line length that is associated with a first medium operation wavelength that is associated with an operation frequency. The transmission lines are connected successively. The antennas are disposed on the substrate, respectively.

Abstract: An apparatus for removing a photoresist layer from at least one alignment mark of a wafer is provided. The apparatus includes a holder, a solvent dispenser, and a suction unit. The holder is used to support the wafer, wherein the alignment mark is formed in a peripheral region of the wafer. The solvent dispenser is used to spray a solvent onto the photoresist layer on the alignment mark of the wafer to generate a dissolved photoresist layer. The suction unit is used to remove the dissolved photoresist layer and the solvent from the wafer through exhausting.

Abstract: The present disclosure provides co-crystals of a lithium benzoate compound and a co-former compound of Formula (I) Also provided herein are methods of preparing the co-crystals and uses thereof in treating and/or reducing the risk for neuropsychiatric disorder (e.g., schizophrenia, psychotic disorders, depressive disorders, bipolar disorders, or neurogenerative disorders).

Abstract: Provided are co-crystals of a sodium benzoate compound and a co-former compound of Formula (I) Also provided herein are methods of preparing the co-crystals and uses thereof in treating and/or reducing the risk for a neuropsychiatric disorder (e.g., schizophrenia, psychotic disorders, depressive disorders, or Alzheimer's disease) or a glucose or lipid metabolic disorder (e.g., obesity, diabetes, hypercholesterolemia, hypertension, or hyperlipidemia).

Abstract: A method of manufacturing a semiconductor structure includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure.

Abstract: A method of writing data to a Ferroelectric-FET (FeFET) based non-volatile memory device can be provided by applying a voltage pulse at a write voltage level with a write polarity at a gate electrode of a FeFET device with reference to a source electrode of the FeFET device, as a write operation to the FeFET device to establish a state for the FeFET device, changing the voltage pulse, directly after the write operation, to a non-zero bias voltage level with a bias polarity that is opposite to the write polarity, at the gate electrode with reference to the source electrode for a delay time to reduce neutralization of a trap state associated with the write operation of the FeFET device, and changing the voltage pulse, after the delay time, to a read voltage level as a read operation to the FeFET device to determine the state of the FeFET device established during the write operation.

Abstract: An electromagnetic wave transmission structure adapted to cause convergence of an electromagnetic wave includes a substrate and a transmission unit provided on the substrate and including an annular metal plate. The annular metal plate has a weighted average inner radius and a weighted average outer radius each related to the wavelength of the electromagnetic wave, the distance between the electromagnetic wave transmission structure and a focal point defined as the point of convergence of the electromagnetic wave, and the distance between the source of the electromagnetic wave and the focal point. The plural inner and outer radii of the annular metal plate have the same trend of variation. Each inner or outer radius corresponds to a weight related to the reference included angle formed between the inner or outer radius and a reference axis.