Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: A semiconductor package without a chip carrier includes an insulating structure having an opening; an electroplated die pad provided in the opening; a chip attached to the electroplated die pad by a thermally conductive adhesive; a plurality of electrical contacts formed around the electroplated die pad, wherein at least one of the electrical contacts is provided on a top surface of the insulating structure, and the chip is electrically connected to the electrical contacts; and an encapsulant for encapsulating the chip, the insulating structure and the electrical contacts, wherein bottom surfaces of the insulating structure, the electroplated die pad and the electrical contacts, except the at least one electrical contact provided on the top surface of the insulating structure, are exposed from the encapsulant and are flush with a bottom surface of the encapsulant. A fabrication method of the semiconductor package is also provided.

Abstract: A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes providing a carrier board; forming a plurality of metal bumps on the carrier board; covering on the carrier board a resist layer having openings for exposure of the metal bumps, the openings being smaller than the metal bumps in width such that a metal layer is formed in the openings, the metal layer having extension circuits and extension pads and bonding pads formed on respective ends of the extension circuits; removing the resist layer; electrically connecting at least one semiconductor chip to the bonding pads; forming an encapsulant on the carrier board to encapsulate the semiconductor chip; and removing the carrier board and the metal bumps to expose the metal layer.

Abstract: A semiconductor package without a chip carrier includes an insulating structure having an opening; an electroplated die pad provided in the opening; a chip attached to the electroplated die pad by a thermally conductive adhesive; a plurality of electrical contacts formed around the electroplated die pad, wherein at least one of the electrical contacts is provided on a top surface of the insulating structure, and the chip is electrically connected to the electrical contacts; and an encapsulant for encapsulating the chip, the insulating structure and the electrical contacts, wherein bottom surfaces of the insulating structure, the electroplated die pad and the electrical contacts, except the at least one electrical contact provided on the top surface of the insulating structure, are exposed from the encapsulant and are flush with a bottom surface of the encapsulant. A fabrication method of the semiconductor package is also provided.