Abstract: The present invention provides an amplifier circuit, wherein the amplifier circuit includes an operational amplifier and a feedback path. The operational amplifier has an input terminal and an output terminal, and is arranged for receiving an input signal to generate an output signal. The feedback path is coupled between the input terminal and the output terminal of the operational amplifier, wherein the feedback path comprises at least two poly resistors, and a depletion region of at least one of the two poly resistors is biased by the output signal generated by the operational amplifier.

Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.

Abstract: A flexible circuit board includes a substrate and a circuit unit formed on the substrate. The substrate has two carrying segments and a connecting segment, and the two carrying segments are connected by the connecting segment. The circuit unit has a plurality of conductive lines and at least one connecting line, and each conductive line and the connecting line are separated from each other. The conductive lines are respectively formed on the two carrying segments, and the connecting line is formed on the connecting segment and the two carrying segments. Two opposite ends of each carrying segment are configured to connect with each other to form a tubular structure, and two opposite ends of the connecting line are configured to connect to two adjacent conductive lines respectively formed on the two tubular structures, thereby the circuit unit is formed as a coil.

Abstract: A current amplifier and a transmitter using the same. The current amplifier has a first and second transistor and a voltage level shifting unit. The first transistor has a gate receiving an input current and a drain receiving a driving current. The voltage level shifting unit providing a voltage shift is coupled between the drain of the first transistor and the gate of the second transistor. An output current is generated at the drain of the second transistor.

Abstract: A wide-angle lens, from an object side to an image side along an optical axis, includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens and a ninth lens. The first, second and third lens are with negative refractive power. The fourth, fifth, sixth and seventh lens are with refractive power. The eighth lens is a biconvex lens with positive refractive power. The ninth lens is a biconvex lens with positive refractive power. The first lens, the second lens and the third lens satisfy: ?26<f1/f<f2/f<f3/f<?3 and ?1.64<f123/f<?1.6 wherein f1 and f2 are effective focal lengths of the first and second lenses, f3 and f are an effective focal lengths of the third lens and the wide-angle lens, and f123 is an effective focal length of the combination of the first lens, second lens and third lens.

Abstract: A lens assembly includes a first lens, a second lens, a stop, a third lens and a fourth lens, all of which are arranged in sequence from an object side to an image side along an optical axis. The first lens and the fourth lens are with negative refractive power. The second lens and the third lens are biconvex lenses with positive refractive power. The first, third, fourth lens include an object side surface and an image side surface respectively, wherein at least one of the object side surface and the image side surface is an aspheric surface. The lens assembly satisfies: 0<|f1/f2|<|f4/f3|<2, f/D12>1 wherein f1, f2, f3, f4, and f is an effective focal length of the first, second, third, fourth lens and the lens assembly, and D12 is an interval from the first lens to the second lens along the optical axis.

Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.

Abstract: A lens assembly includes a first lens, a second lens, a stop, a third lens and a fourth lens, all of which are arranged in sequence from an object side to an image side along an optical axis. The first lens and the fourth lens are with negative refractive power. The second lens and the third lens are biconvex lenses with positive refractive power. The first, third, fourth lens include an object side surface and an image side surface respectively, wherein at least one of the object side surface and the image side surface is an aspheric surface. The lens assembly satisfies: 0<|f1/f2|<|f4/f3|<2, f/D12>1 wherein f1, f2, f3, f4, and f is an effective focal length of the first, second, third, fourth lens and the lens assembly, and D12 is an interval from the first lens to the second lens along the optical axis.

Abstract: A wide-angle lens, from an object side to an image side along an optical axis, includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens and a ninth lens. The first, second and third lens are with negative refractive power. The fourth, fifth, sixth and seventh lens are with refractive power. The eighth lens is a biconvex lens with positive refractive power. The ninth lens is a biconvex lens with positive refractive power. The first lens, the second lens and the third lens satisfy: ?26<f1/f<f2/f<f3/f<?3 and ?1.64<f123/f<?1.6 wherein f1 and f2 are effective focal lengths of the first and second lenses, f3 and f are an effective focal lengths of the third lens and the wide-angle lens, and f123 is an effective focal length of the combination of the first lens, second lens and third lens.

Abstract: A current amplifier and a transmitter using the same. The current amplifier has a first and second transistor and a voltage level shifting unit. The first transistor has a gate receiving an input current and a drain receiving a driving current. The voltage level shifting unit providing a voltage shift is coupled between the drain of the first transistor and the gate of the second transistor. An output current is generated at the drain of the second transistor.

Abstract: A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.

Abstract: An imaging lens including the first˜fifth lens arranged in sequence from an object side to an image side is provided. The first lens has at least one aspheric surface. The second lens with negative optical power has at least one aspheric surface and a convex surface facing towards the object side. The third lens with positive optical power has at least one aspheric surface and a concave surface facing towards the object side. The fourth lens with negative optical power has at least one aspheric surface and a concave surface facing towards the image side. The fifth lens with positive optical power has at least one aspheric surface and a convex surface facing towards the object side. By the above arrangement, the imaging lens has a shorter optical total length and a larger aperture for enhancing the image quality.

Abstract: A method of embedding a magnetic component in a substrate is disclosed. Holes are formed in a substrate by mechanically drilling. Each of the holes includes a top opening, a bottom and sidewall, wherein an area of the top opening is larger than that of the bottom. The sidewall extends from the top opening vertically downwards to a predetermined depth, and then is slanted inwardly to the bottom to form a sloped sidewall at the bottom of the hole. A predetermined region is defined along a portion of an edge of the top opening, and a portion of the substrate material under the predetermined region is removed by routing to form a component accommodation trench with a portion of the sloped sidewall at the bottom. Then, a magnetic component is placed into the component accommodation trench.

Abstract: A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.

Abstract: A lens assembly includes a first lens, a second lens, a third lens, a fourth lens and a fifth lens, all of which are arranged in sequence from an object side to an image side along an optical axis. The first lens is with positive refractive power and includes a convex surface facing the object side. The second lens is a meniscus lens with negative refractive power and includes a convex surface facing the object side. The third lens is with positive refractive power and includes a convex surface facing the image side. The fourth lens is with positive refractive power and includes a convex surface facing the image side. The fifth lens is a biconcave lens with negative refractive power.

Abstract: A lens assembly includes a first lens, a second lens, a third lens, a fourth lens and a fifth lens, all of which are arranged in sequence from an object side to an image side along an optical axis. The first lens is with positive refractive power and includes a convex surface facing the object side. The second lens is a meniscus lens with negative refractive power and includes a convex surface facing the object side. The third lens is with positive refractive power and includes a convex surface facing the image side. The fourth lens is with positive refractive power and includes a convex surface facing the image side. The fifth lens is a biconcave lens with negative refractive power.

Abstract: An imaging lens including the first˜fifth lens arranged in sequence from an object side to an image side is provided. The first lens has at least one aspheric surface. The second lens with negative optical power has at least one aspheric surface and a convex surface facing towards the object side. The third lens with positive optical power has at least one aspheric surface and a concave surface facing towards the object side. The fourth lens with negative optical power has at least one aspheric surface and a concave surface facing towards the image side. The fifth lens with positive optical power has at least one aspheric surface and a convex surface facing towards the object side. By the above arrangement, the imaging lens has a shorter optical total length and a larger aperture for enhancing the image quality.

Abstract: The present invention discloses a water level determining method for a boiling water reactor. Thereby, for a boiling water reactor under anticipated transient without scram, risk of sudden power increase due to the uncertain water level raised to a main steam tube can be reduced by installing a thermometer on the top of the reactor or the main steam tube. By controlling flow rate of water and keeping the steam temperature higher than the saturated temperature, the core of the reactor can be sure to cool down properly.

Abstract: The present invention provides a projection prime lens including first lens group, a second lens group, and a third lens group arranged in sequence along an optical axis from a screen side to a light modulator side. The first lens group has negative refractive power and includes a first lens with negative refractive power and a second lens with negative refractive power. The second lens group has positive refractive power and includes a third lens with positive refractive power and a fourth lens with positive refractive power The third lens group has positive refractive power and includes a fifth lens with negative refractive power, a sixth lens with positive refractive power, and a seventh lens with positive refractive power. Therefore, the projection prime lens of the present invention has a small size and a good image quality.