Patents by Inventor Yuan-Fu Shao

Yuan-Fu Shao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for probing semiconductor fins through four-point probe and determining carrier concentrations
    Patent number: 9627280
    Abstract: A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: April 18, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wei-Chun Tsai
  • Fin field-effect transistors having controlled fin height
    Patent number: 9455325
    Abstract: An apparatus includes a semiconductor substrate having a plurality of fins, wherein the plurality of fins includes a first group of fins and a second group of fins. The apparatus further includes a high fin density area on the semiconductor substrate including a first dielectric between the first group of fins in the high fin density area, said first dielectric having a first dopant concentration. The apparatus further includes a low fin density area on the semiconductor substrate including a second dielectric between the second group of fins in the low fin density area, said second dielectric having a second dopant concentration. The first dielectric and the second dielectric are a same material as deposited and the first dopant concentration and the second dopant concentration are different.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: September 27, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wen-Huei Guo, Tung Ying Lee
  • Methods for Probing Semiconductor Fins and Determining Carrier Concentrations
    Publication number: 20160268174
    Abstract: A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.
    Type: Application
    Filed: May 23, 2016
    Publication date: September 15, 2016
    Inventors: Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wei-Chun Tsai
  • Methods for probing semiconductor fins and determining carrier concentrations therein
    Patent number: 9349659
    Abstract: A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: May 24, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wei-Chun Tsai
  • Calculating Carrier Concentrations in Semiconductor Fins Using Probed Resistance
    Publication number: 20150287652
    Abstract: A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.
    Type: Application
    Filed: June 17, 2015
    Publication date: October 8, 2015
    Inventors: Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wei-Chun Tsai
  • FIN FIELD-EFFECT TRANSISTORS HAVING CONTROLLED FIN HEIGHT
    Publication number: 20150228743
    Abstract: An apparatus includes a semiconductor substrate having a plurality of fins, wherein the plurality of fins includes a first group of fins and a second group of fins. The apparatus further includes a high fin density area on the semiconductor substrate including a first dielectric between the first group of fins in the high fin density area, said first dielectric having a first dopant concentration. The apparatus further includes a low fin density area on the semiconductor substrate including a second dielectric between the second group of fins in the low fin density area, said second dielectric having a second dopant concentration. The first dielectric and the second dielectric are a same material as deposited and the first dopant concentration and the second dopant concentration are different.
    Type: Application
    Filed: April 22, 2015
    Publication date: August 13, 2015
    Inventors: Clement Hsingjen WANN, Ling-Yen YEH, Chi-Yuan SHIH, Yuan-Fu SHAO, Wen-Huei GUO, Tung Ying LEE
  • Calculating carrier concentrations in semiconductor Fins using probed resistance
    Patent number: 9093335
    Abstract: A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: July 28, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wei-Chun Tsai
  • Method of forming fin field-effect transistors having controlled fin height
    Patent number: 9041158
    Abstract: A semiconductor apparatus includes fin field-effect transistor (FinFETs) having controlled fin heights. The apparatus includes a high fin density area and a low fin density area. Each fin density area includes fins and dielectric material between the fins. The dielectric material includes different dopant concentrations for different fin density areas and is the same material as deposited.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: May 26, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wen-Huei Guo, Tung Ying Lee
  • Method for Determining Carrier Concentrations in Semiconductor Fins
    Publication number: 20140147943
    Abstract: A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wei-Chun Tsai
  • FIN FIELD-EFFECT TRANSISTORS HAVING CONTROLLED FIN HEIGHT AND METHOD OF MAKING
    Publication number: 20130221491
    Abstract: A semiconductor apparatus includes fin field-effect transistor (FinFETs) having controlled fin heights. The apparatus includes a high fin density area and a low fin density area. Each fin density area includes fins and dielectric material between the fins. The dielectric material includes different dopant concentrations for different fin density areas and is the same material as deposited.
    Type: Application
    Filed: February 23, 2012
    Publication date: August 29, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Yuan-Fu Shao, Wen-Huei Guo, Tung Ying Lee