Patents by Inventor Yuan-Fu SUNG

Yuan-Fu SUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10867899
    Abstract: A method of manufacturing a semiconductor package includes: (1) providing a first passivation layer on a carrier; (2) patterning the first passivation layer to define a first hole; (3) disposing a first seed layer on the first hole; (4) disposing a first conductive layer on the first seed layer; (5) replacing the carrier with a second passivation layer; (6) patterning the second passivation layer to define a second hole exposing the first seed layer; and (7) disposing a second conductive layer on the exposed first seed layer through the second hole.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: December 15, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yuan-Fu Sung, Shin-Hua Chao, Ming-Chi Liu, Hung-Sheng Chen
  • Publication number: 20190067181
    Abstract: A method of manufacturing a semiconductor package includes: (1) providing a first passivation layer on a carrier; (2) patterning the first passivation layer to define a first hole; (3) disposing a first seed layer on the first hole; (4) disposing a first conductive layer on the first seed layer; (5) replacing the carrier with a second passivation layer; (6) patterning the second passivation layer to define a second hole exposing the first seed layer; and (7) disposing a second conductive layer on the exposed first seed layer through the second hole.
    Type: Application
    Filed: October 30, 2018
    Publication date: February 28, 2019
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yuan-Fu SUNG, Shin-Hua CHAO, Ming-Chi LIU, Hung-Sheng CHEN
  • Patent number: 10141252
    Abstract: A semiconductor package includes: a passivation layer having a first surface and a second surface opposite to the first surface, the passivation layer defining a through hole extending from the first surface to the second surface, the through hole being further defined by a first sidewall and a second sidewall of the passivation layer; a first conductive layer on the first surface of the passivation layer and the first sidewall; a second conductive layer on the second surface of the passivation layer and the second sidewall; and a third conductive layer between the first conductive layer and the second conductive layer.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: November 27, 2018
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yuan-Fu Sung, Shin-Hua Chao, Ming-Chi Liu, Hung-Sheng Chen
  • Publication number: 20180233443
    Abstract: A semiconductor package includes: a passivation layer having a first surface and a second surface opposite to the first surface, the passivation layer defining a through hole extending from the first surface to the second surface, the through hole being further defined by a first sidewall and a second sidewall of the passivation layer; a first conductive layer on the first surface of the passivation layer and the first sidewall; a second conductive layer on the second surface of the passivation layer and the second sidewall; and a third conductive layer between the first conductive layer and the second conductive layer.
    Type: Application
    Filed: February 16, 2017
    Publication date: August 16, 2018
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Yuan-Fu SUNG, Shin-Hua CHAO, Ming-Chi LIU, Hung-Sheng CHEN