Abstract: Provided is a memory device and a method of forming the same. The method includes: providing a substrate having multiple active regions; forming a first layer stack on the substrate; patterning the first layer stack to form multiple recesses in the first layer stack; forming a liner layer on the first layer stack to cover the recesses; performing an etching process to remove a portion of the liner layer and the first layer stack below the recesses, so as to extend the recesses downward to form multiple openings, wherein the openings respectively expose the active regions; respectively forming multiple conductive structures in the openings; forming a second layer stack on the conductive structures; and patterning the second layer stack and the conductive structures to form multiple bit-line structures and bit-line contacts, respectively.

Abstract: Disclosed is a method for testing a light-emitting device comprising the steps of: providing an integrating sphere comprising an inlet port and a first exit port; disposing the light-emitting device close to the inlet port of the integrating sphere; providing a current source to drive the light-emitting device to form an image of the light-emitting device in driven state; providing an image receiving device and to receive the image of the light-emitting device, wherein the image receiving device is connected to the first exit port of the integrating sphere; and determining a luminous intensity of the light-emitting device according to the image. An apparatus for testing a light-emitting device is also disclosed.