Abstract: A hydrophobic film is provided. The hydrophobic film includes a flexible substrate; a hydrophobic layer located on the flexible substrate, a heating layer, a first electrode and a second electrode spaced apart from the first electrode. The hydrophobic layer comprises a base and a patterned bulge layer on a surface of the base away from the flexible substrate. The heating layer is on a surface of the flexible substrate away from the hydrophobic layer. The first electrode and the second electrode are electrically connected to and in direct contact with the heating layer.

Abstract: An infrared detector includes a thermoelectric element, an infrared light absorber located on the thermoelectric element, and an electrical signal detecting element. The infrared light absorber includes a first drawn carbon nanotube film, a second drawn carbon nanotube film, and a third drawn carbon nanotube film stacked on each other. The first drawn carbon nanotube film includes a plurality of first carbon nanotubes substantially extending along a first direction. The second drawn carbon nanotube film includes a plurality of second carbon nanotubes substantially extending along a second direction. The third drawn carbon nanotube film includes a plurality of third carbon nanotubes substantially extending along a third direction. The first direction and the second direction form an angle of about 42 degrees to about 48 degrees, and the first direction and the third direction form an angle of about 84 degrees to about 96 degrees.

Abstract: An embodiment of the present disclosure discloses a memory device. The memory device comprises a memory controller, a buffer and a memory array. The buffer is coupled to the memory controller or embedded in the memory controller. A storage space of the buffer is configured by the memory controller to include a plurality of groups. The memory array is coupled to the memory controller, and comprising a plurality of tiles. The groups are one-to-one corresponding to the tiles. Each of the groups is configured to store data to be written into the corresponding tile. The memory controller performs one or more write operations based on the groups.

Abstract: A fall detection system includes first sensing devices, second sensing devices, positioning modules, a data server and a display device. The first sensing device is configured to detect a posture of a body part of a user for obtaining body part posture data. The positioning modules are configured to detect positions of the first and second sensing devices, so as to obtain corresponding body part position data. Each of the second sensing devices is disposed on a shoe to detect a posture of a user's feet and to measure a distance from an ambient object for obtaining feet posture data and distance measurement data. The data server is configured to receive the body part posture data, the body part position data, the feet posture data and the distance measurement data to determine if the user falls down.

Abstract: The present disclosure provides a method for topography simulation of a physical structure under a topography-changing process. The method includes initializing a voxel mesh as a three-dimensional (3D) representation of the physical structure, generating a batch of particles, simulating a flight path of one of the particles with a ray-tracing method by a parallel processing thread in a hardware accelerator, identifying a surface normal of a voxel unit in the voxel mesh that intersects the flight path by the parallel processing thread, determining a surface reaction between the one of the particles and the voxel unit by a central processing unit (CPU), and updating the voxel mesh based on the determining of the surface reaction.

Abstract: The present disclosure provides a method for topography simulation of a physical structure under a topography-changing process. The method includes initializing a voxel mesh as a three-dimensional (3D) representation of the physical structure, generating a batch of particles, simulating a flight path of at least one of the particles with a ray-tracing method, identifying a voxel unit in the voxel mesh that intersects the flight path, determining a surface reaction between the one of the particles and the voxel unit, and adding an extra voxel unit adjacent to the voxel unit based on the determining of the surface reaction.

Abstract: Provided is a memory device and a method of forming the same. The method includes: providing a substrate having multiple active regions; forming a first layer stack on the substrate; patterning the first layer stack to form multiple recesses in the first layer stack; forming a liner layer on the first layer stack to cover the recesses; performing an etching process to remove a portion of the liner layer and the first layer stack below the recesses, so as to extend the recesses downward to form multiple openings, wherein the openings respectively expose the active regions; respectively forming multiple conductive structures in the openings; forming a second layer stack on the conductive structures; and patterning the second layer stack and the conductive structures to form multiple bit-line structures and bit-line contacts, respectively.

Abstract: A neutron-capture therapy system includes a charged particle beam generation unit, a beam transmission unit and a neutron beam generation unit. The charged particle beam generation unit includes an ion source and an accelerator. The accelerator accelerates charged particles generated by the ion source, so as to obtain a charged particle beam of the required energy. The neutron beam generation unit includes a target, a beam shaping body and a collimator. The charged particle beam irradiates onto the target through the beam transmission unit to generate neutrons, which sequentially pass through the beam shaping body and the collimator to form a neutron beam for therapy. The neutron-capture therapy system is accommodated in a concrete building including an irradiation room, an accelerator chamber and a beam transmission chamber. The neutron beam generation unit is at least partially accommodated in a partition wall of the irradiation chamber and the beam transmission chamber.

Abstract: A neutron capture therapy device and a corresponding correction method for a neutron capture therapy device. The neutron capture therapy device comprises a neutron dose measurement apparatus (21) and a correction system (3) for correcting the neutron dose measurement apparatus (21), wherein the neutron dose measurement apparatus (21) comprises a detector (211) used to receive neutrons and output electrical signals, a signal processing unit (212) used to process the electrical signals output from the detector (211) and convert the electrical signals into pulse signals, and a counter (213) used to count the pulse signals output from the signal processing unit (212) to obtain a count rate.

Abstract: A neutron capture therapy system includes a neutron beam generating unit, an irradiation room configured to irradiate an irradiated body with a neutron beam, a preparation room configured to implement preparation work required to irradiate the irradiated body with the neutron beam, and an auxiliary positioner disposed in the irradiation room and/or the preparation room. The irradiation room includes a first shielding wall, a collimator is disposed on the first shielding wall for emitting the neutron beam, the neutron beam is emitted from the collimator and defines a neutron beam axis. The auxiliary positioner includes a laser emitter that emits a laser beam to position the irradiated body. Wherein the position of the laser emitter is selectable. Therefore, the irradiated body can be positioned in any case to implement precise irradiation.

Abstract: A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.

Abstract: A data packet transmission method—that includes: obtaining, by a terminal, N application programs that are running; and if the N application programs include an application program including a low-latency service; determining whether an unlicensed frequency band is in a congestion state; and instructing a network device to schedule a data packet of the terminal to a licensed frequency band for transmission when the unlicensed frequency band is in a congestion state. When determining that the N running application programs include the application program including the low-latency service, the terminal may instruct the network device to schedule the data packet of the terminal to the licensed frequency band for transmission, so as to transmit a data packet of the low-latency service by using the licensed frequency band. Resources in the licensed frequency band are centrally scheduled by the network device, instead of being used through contention.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. Each vector data is executed with a multiplying-operation, the MSB vector and the LSB vector of each vector data is executed with a first group-counting operation and a second group-counting operation respectively. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, the effective bit number stored by each memory unit is less than 2.

Abstract: A neutron capture therapy apparatus includes a neutron beam irradiation system, a detection system and a monitoring system. The neutron beam irradiation system is configured for generating a neutron beam. The detection system is configured for detecting real-time irradiation parameters during a neutron beam irradiation therapy process. The monitoring system is configured for controlling the whole neutron beam irradiation process and includes an input part for inputting preset irradiation parameters, a determination part for determining whether the irradiation parameters need to be corrected and a correction part for correcting some of the irradiation parameters when the determination part determines that the irradiation parameters need to be corrected. When the ratio of the real-time neutron dose detected by the detection system to a preset neutron dose is greater than or equal to a preset value, the determination part of the monitoring system determines that the irradiation parameters need to be corrected.

Abstract: A semiconductor package, a semiconductor device and a shielding housing for a semiconductor package are provided. The semiconductor package includes a semiconductor chip having a first region and a second region beside the first region; and a shielding housing encasing the semiconductor chip, made of a magnetic permeable material, and including a first shielding plate, a second shielding plate opposite to the first shielding plate and a shielding wall extending between the first shielding plate and the second shielding plate. The first shielding plate has an opening exposing the first region and includes a raised portion surrounding the opening and a flat portion beside the raised portion and shielding the second region. A first distance from a level of the semiconductor chip to an outer surface of the raised portion is greater than a second distance from the level to an outer surface of the flat portion.

Abstract: A compressed sensing imaging method and a compressed sensing imaging system are provided. In the method, multiple grayscale masks having multiple elements with grayscale values represented by floating-point values or continuous values are generated as sensing matrices based on a compressed sensing theory. A spatial light modulator is controlled to modulate an electromagnetic wave projected on an object under test according to the grayscale value of each element in each grayscale mask, and a physical property of the electromagnetic wave passing through the object under test is detected to obtain multiple measured values. An image reconstruction algorithm is executed to reconstruct an image of the object under test by using the grayscale masks and the measured values obtained from the electromagnetic wave modulated by each grayscale mask.

Abstract: Disclosed are a neutron dose detection apparatus and a neutron capture therapy device. The neutron dose detection apparatus includes at least two counting rate channels and a counting rate channel selection unit used for selecting one of the at least one counting rate channels. The counting rate channel includes a detector used for detecting neutrons and outputting a signal, a signal processing unit used for processing the signal output by the detector, and a counter used for counting the signal output by the signal processing unit.

Abstract: A method for making a field effect transistor includes providing a graphene nanoribbon composite structure. The graphene nanoribbon composite structure includes a substrate and a plurality of graphene nanoribbons spaced apart from each other. The plurality of graphene nanoribbons are located on the substrate and extend substantially along a same direction, and each of the plurality of graphene nanoribbons includes a first end and a second end opposite to the first end. A source electrode is formed on the first end, and a drain electrode is formed on the second end. The source electrode and the drain electrode are electrically connected to the plurality of graphene nanoribbons. An insulating layer is formed on the plurality of graphene nanoribbons, and the plurality of graphene nanoribbons are between the insulating layer and the substrate. A gate is formed on a surface of the insulating layer away from the substrate.