Abstract: An integrated circuit chip and method of manufacture. The chip has a substrate, e.g., silicon, silicon on insulator, epitaxial wafer. The substrate has a plurality of chip structures. A plurality of bonding pads are disposed on the substrate. Each of the bonding pads is formed from an aluminum bearing material or other like material. A surface region is formed on each of the bonding pads. An under bump metal layer (“UBM”) is overlying the surface region. A wetting layer is formed overlying the under bump metal layer. The wetting layer comprises a plurality of protrusions extending out of the wetting layer and disposed spatially on the wetting layer. A bump layer is formed overlying the wetting layer and is mechanically coupling to the plurality of protrusions.