Patents by Inventor Yuan-Hsiao Su

Yuan-Hsiao Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for controlling temperature of furnace in semiconductor fabrication process
    Patent number: 10930527
    Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: February 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Jian-Lun Lo, Jih-Churng Twu, Feng-Yu Chen, Yuan-Hsiao Su, Yi-Chi Huang, Yueh-Ting Yang, Shu-Han Chao
  • METHOD FOR CONTROLLING TEMPERATURE OF FURNACE IN SEMICONDUCTOR FABRICATION PROCESS
    Publication number: 20200312685
    Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.
    Type: Application
    Filed: June 12, 2020
    Publication date: October 1, 2020
    Inventors: Jian-Lun LO, Jih-Churng TWU, Feng-Yu CHEN, Yuan-Hsiao SU, Yi-Chi HUANG, Yueh-Ting YANG, Shu-Han CHAO
  • Method for controlling temperature of furnace in semiconductor fabrication process
    Patent number: 10741426
    Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jian-Lun Lo, Jih-Churng Twu, Feng-Yu Chen, Yuan-Hsiao Su, Yi-Chi Huang, Yueh-Ting Yang, Shu-Han Chao
  • METHOD FOR CONTROLLING TEMPERATURE OF FURNACE IN SEMICONDUCTOR FABRICATION PROCESS
    Publication number: 20190096714
    Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.
    Type: Application
    Filed: February 27, 2018
    Publication date: March 28, 2019
    Inventors: Jian-Lun LO, Jih-Churng TWU, Feng-Yu CHEN, Yuan-Hsiao SU, Yi-Chi HUANG, Yueh-Ting YANG, Shu-Han CHAO
  • Construction and screening of solution-phase derived library of fenbufen and ethacrynic acid
    Patent number: 8093427
    Abstract: A process for synthesizing and screening solution phase derived libraries of fenbufen and ethacrynic acid is provided in the present invention. Compounds in the present invention having cytotoxicities are useful for a variety of therapeutic applications.
    Type: Grant
    Filed: June 9, 2010
    Date of Patent: January 10, 2012
    Assignee: National Tsing Hua University
    Inventors: Chung-Shan Yu, Yuan-Hsiao Su, Li-Wu Chiang, Chia-Rong Chen, Shao-Wei Chen, Chia-Wen Huang, Ho-Lien Huang, Yin-Cheng Huang
  • CONSTRUCTION AND SCREENING OF SOLUTION-PHASE DERIVED LIBRARY OF FENBUFEN AND ETHACRYNIC ACID
    Publication number: 20110306668
    Abstract: A process for synthesizing and screening solution phase derived libraries of fenbufen and ethacrynic acid is provided in the present invention. Compounds in the present invention having cytotoxicities are useful for a variety of therapeutic applications.
    Type: Application
    Filed: June 9, 2010
    Publication date: December 15, 2011
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chung-Shan Yu, Yuan-Hsiao Su, Li-Wu Chiang, Chia-Rong Chen, Shao-Wei Chen, Chia-Wen Huang, Ho-Lien Huang, Yin-Cheng Huang