Abstract: A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.

Abstract: A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.

Abstract: A connect structure for semiconductor processing equipment includes a housing configured to mate a deformable pipe with a non-deformable pipe. The housing includes a first annular sidewall to receive the deformable pipe and a second annular sidewall defining a first thread structure. An annular bead is connected to the first annular sidewall to flexibly deform the deformable pipe toward the non-deformable pipe structure when the first thread structure rotatably engages a second thread structure of the non-deformable pipe.

Abstract: A wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.

Abstract: A deposition tool includes a power cable pedestal including a pedestal body with a first surface and a second surface and a guide hole that extends through the pedestal body from the first surface to the second surface, where at least a portion of a sidewall of the guide hole has a slanted surface, and where the pedestal body is formed from a first material with a melting point that is higher than a melting point of Polyoxymethylene (POM). The deposition tool includes a bushing arranged over the guide hole, where the bushing is formed from a second material with a melting point that is higher than the melting point of POM.

Abstract: A radio frequency (RF) match assembly for a chemical vapor deposition processing chamber. The assembly includes a top electrically insulating column and a bottom electrically insulating column. The assembly further includes a one-piece RF match strap that has a head, a main body and a body extension. The main body of the one-piece RF match strap is configured to extend through the top electrically insulating column and the bottom electrically insulating column. A flexible chamber lid strap connects the processing chamber to the top of the one-piece RF match strap.

Abstract: A connect structure for semiconductor processing equipment includes a housing configured to mate a deformable pipe with a non-deformable pipe. The housing includes a first annular sidewall to receive the deformable pipe and a second annular sidewall defining a first thread structure. An annular bead is connected to the first annular sidewall to flexibly deform the deformable pipe toward the non-deformable pipe structure when the first thread structure rotatably engages a second thread structure of the non-deformable pipe.

Abstract: A deposition tool includes a power cable pedestal including a pedestal body with a first surface and a second surface and a guide hole that extends through the pedestal body from the first surface to the second surface, where at least a portion of a sidewall of the guide hole has a slanted surface, and where the pedestal body is formed from a first material with a melting point that is higher than a melting point of Polyoxymethylene (POM). The deposition tool includes a bushing arranged over the guide hole, where the bushing is formed from a second material with a melting point that is higher than the melting point of POM.

Abstract: Methods for improving wafer bonding performance are disclosed herein. In some embodiments, a method for bonding a pair of semiconductor substrates is disclosed. The method includes: processing at least one of the pair of semiconductor substrates, and bonding the pair of semiconductor substrates together. Each of the pair of semiconductor substrates is processed by: performing at least one chemical vapor deposition (CVD), and performing at least one chemical mechanical polishing (CMP). One of the at least one CVD is performed after all CMP performed before bonding.

Abstract: A wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.

Abstract: A radio frequency (RF) match assembly for a chemical vapor deposition processing chamber. The assembly includes a top electrically insulating column and a bottom electrically insulating column. The assembly further includes a one-piece RF match strap that has a head, a main body and a body extension. The main body of the one-piece RF match strap is configured to extend through the top electrically insulating column and the bottom electrically insulating column. A flexible chamber lid strap connects the processing chamber to the top of the one piece RF match strap.

Abstract: A wafer storage elevator and method for detecting wafer position shift. The elevator includes a first storage elevator sidewall, a second storage elevator sidewall, and a storage seat positioned between the first and second storage elevator sidewalls. A first mirror block is coupled to a front side of the storage seat having a mirror positioned on a top surface of the block, and a second mirror block is coupled to the front side of the storage seat having a mirror that is positioned on the top surface of the second mirror block. The mirror of the first mirror block reflects a laser beam from an emission sensor to the second mirror block, and the mirror of the second mirror block reflects the laser beam from the mirror of the first mirror block to a receive sensor. A wafer misalignment is determined based upon an output of the receive sensor.

Abstract: A leak check is performed on a semiconductor wafer processing tool that includes a process chamber and process gas lines, and a semiconductor wafer is processed using the semiconductor wafer processing tool if the leak check passes. Each gas line includes a mass flow controller (MFC) and normally closed valves including an upstream and downstream valves upstream and downstream of the MFC. Leak checking includes: leak checking up to the downstream valves of the gas lines with the upstream valves closed and the downstream valves of the gas lines closed; and leak checking up to the upstream valve of each the process gas line with the upstream valves of the of the process gas lines closed and with the downstream valve of the of the process gas line being leak checked open and the downstream valve of every other process gas line closed.

Abstract: A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

Abstract: A connect structure for semiconductor processing equipment includes a housing configured to mate a deformable pipe with a non-deformable pipe. The housing includes a first annular sidewall to receive the deformable pipe and a second annular sidewall defining a first thread structure. An annular bead is connected to the first annular sidewall to flexibly deform the deformable pipe toward the non-deformable pipe structure when the first thread structure rotatably engages a second thread structure of the non-deformable pipe.

Abstract: A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

Abstract: Methods for improving wafer bonding performance are disclosed herein. In some embodiments, a method for bonding a pair of semiconductor substrates is disclosed. The method includes: processing at least one of the pair of semiconductor substrates, and bonding the pair of semiconductor substrates together. Each of the pair of semiconductor substrates is processed by: performing at least one chemical vapor deposition (CVD), and performing at least one chemical mechanical polishing (CMP). One of the at least one CVD is performed after all CMP performed before bonding.

Abstract: The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.

Abstract: The present disclosure is directed to workpiece support for supporting a workpiece during semiconductor processing. The workpiece support includes one or more support frame bodies including a plurality of spaced apart spacers on a first surface of the support frame bodies. The spacers include a first surface spaced apart from the first surface of the support frame body. The spacing between the first surface of the spacers and the first surface of the support frame body results in the underside of the workpiece contacting the spacers but not contacting the first surface of the support frame body. Portions of the underside of the workpiece that do not contact the first surface of the support frame body are less susceptible to damage or accumulation of unwanted debris.

Abstract: The present disclosure is directed to a transfer blade including a first end segment, a second end segment opposite to the first end segment, and an intermediate segment extending from the first end segment to the second end segment. The first end segment includes a first contact region and the second end segment includes a second contact region. The first and second contact regions are configured to contact locations of a surface of a workpiece that do not overlap or are not aligned with a sensitive area of the workpiece. The sensitive area of the workpiece may be an EUV frame or a reticle of the workpiece. A non-contact region extends continuously along the first end segment, the intermediate segment, and the second end segment, and the non-contact region overlaps the sensitive area of the workpiece and is spaced apart from the sensitive area of the workpiece.