Abstract: A separating device for separating an electronic main body from a substrate bonded thereto comprises a platform, a conveying section, a dissolving section, a cleaning section, and a first partition plate. The conveying section is disposed on the platform for moving the electronic main body and the substrate forward. The dissolving section is disposed on the platform for spraying a solvent onto the bonded electronic main body and substrate. The cleaning section is also disposed on the platform for cleaning the electronic main body. The first partition plate is located between the dissolving section and the cleaning section and has at least one first slot, which allows only the electronic main body but not the substrate to pass therethrough, so that the electronic main body is separated from the substrate at the first partition plate. A method for separating the electronic main body and the substrate is also provided.

Abstract: A separating device for separating an electronic main body from a substrate bonded thereto comprises a platform, a conveying section, a dissolving section, a cleaning section, and a first partition plate. The conveying section is disposed on the platform for moving the electronic main body and the substrate forward. The dissolving section is disposed on the platform for spraying a solvent onto the bonded electronic main body and substrate. The cleaning section is also disposed on the platform for cleaning the electronic main body. The first partition plate is located between the dissolving section and the cleaning section and has at least one first slot, which allows only the electronic main body but not the substrate to pass therethrough, so that the electronic main body is separated from the substrate at the first partition plate. A method for separating the electronic main body and the substrate is also provided.

Abstract: The present invention disclosed a method and apparatus for removing a SiC or a low k dielectric film, wherein the SiC or low k dielectric film is deposited on a substrate. The method comprising: Process the low k dielectric film or SiC film with high temperature oxidation, such as wet oxidation or dry oxidation, to transform the film into an oxide film layer, then remove the oxide film layer by wet etching. The present invention also disclosed an apparatus to perform the process, comprising: a high temperature processing unit such as a high temperature furnace, and a wet etching unit such as a wet bench or a single wafer spin etching processor. These units may form as a single apparatus, a cluster tool or separate tools.

Abstract: The present invention discloses a two-step CMP method and employed polishing compositions. In the first step, a first polishing slurry is provided to selectively polish the Al-alloy layer. Next, a second polishing slurry is provided to selectively polish the barrier layer. Accordingly, undesired surface non-planarity after the CMP process, such as metal dishing and corrosion of dielectric layers with complicated pattern geometry, can be avoided, and thus the planarization of wafer surfaces can be achieved.