Patents by Inventor Yuan-Hsin Tzou

Yuan-Hsin Tzou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a semiconductor device having a metal substrate
    Patent number: 6555405
    Abstract: The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor substrate and then removing the semiconductor substrate. The metal substrate has advantages of high thermal and electrical conductivity that can improve the reliability and lifetime of the semiconductor device.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: April 29, 2003
    Assignee: Uni Light Technology, Inc.
    Inventors: Nai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen
  • Method for forming a semiconductor device having a metallic substrate
    Patent number: 6468824
    Abstract: The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.
    Type: Grant
    Filed: March 22, 2001
    Date of Patent: October 22, 2002
    Assignee: Uni Light Technology Inc.
    Inventors: Nai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen
  • METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A METALLIC SUBSTRATE
    Publication number: 20020137243
    Abstract: The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.
    Type: Application
    Filed: March 22, 2001
    Publication date: September 26, 2002
    Inventors: Nai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen
  • Method for forming a semiconductor device having a metal substrate
    Publication number: 20020137244
    Abstract: The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes at least one semiconductor substrate; at least one semiconductor layer is formed on the semiconductor substrate; the metal substrate is formed on the semiconductor substrate and then the semiconductor substrate is removed. The metal substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and lifetime of the semiconductor device.
    Type: Application
    Filed: August 21, 2001
    Publication date: September 26, 2002
    Applicant: Uni Light Technology Inc.
    Inventors: Nai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen