Abstract: A method for detecting a defect in a semiconductor fabrication process is disclosed. The method includes forming photoresist on a substrate; forming a fluorescent agent in the photoresist; and detecting the defect of the photoresist after being subjected to developing by utilizing the fluorescent agent.

Abstract: A method for detecting a defect in a semiconductor fabrication process is disclosed. The method includes forming photoresist on a substrate; forming a fluorescent agent in the photoresist; and detecting the defect of the photoresist after being subjected to developing by utilizing the fluorescent agent.

Abstract: An integrated alignment and overlay mark for detecting the exposed errors of the photolithography process between a pre-layer and a current layer is disclosed. The integrated alignment and overlay mark includes an alignment mark and an overlay mark in the same shot region. The alignment mark is formed surrounding the overlay mark; therefore, the gap or the orientation between the pre-layer and the current layer can be calculated in order to check the alignment accuracy of photolithography process.

Abstract: An integrated alignment and overlay mark for detecting the exposed errors of the photolithography process between a pre-layer and a current layer is disclosed. The integrated alignment and overlay mark includes an alignment mark and an overlay mark in the same shot region. The alignment mark is formed surrounding the overlay mark; therefore, the gap or the orientation between the pre-layer and the current layer can be calculated in order to check the alignment accuracy of photolithography process.

Abstract: A method of checking overlap accuracy of patterns on fourth semiconductor layers. The first checking pattern is formed on the first semiconductor layer, the second checking pattern is formed on the second semiconductor layer, the third checking pattern is formed on the third semiconductor layer and the fourth checking pattern is formed on the fourth semiconductor layer. The first, second and third checking patterns overlap to form the first rectangular frame and the fourth checking pattern is surrounded by the first rectangular frame. A first pair of parallel sides of the first rectangular frame is formed by the first checking pattern and the second pair of parallel sides of the first rectangular frame is formed by the second and third checking patterns. Overlap accuracy of the patterns is obtained by checking the location error between the fourth checking pattern and the first checking pattern and the location error between the fourth checking pattern and the second and third checking patterns respectively.

Abstract: A method of checking overlap accuracy of patterns on fourth semiconductor layers. The first checking pattern is formed on the first semiconductor layer, the second checking pattern is formed on the second semiconductor layer, the third checking pattern is formed on the third semiconductor layer and the fourth checking pattern is formed on the fourth semiconductor layer. The first, second and third checking patterns overlap to form the first rectangular frame and the fourth checking pattern is surrounded by the first rectangular frame. A first pair of parallel sides of the first rectangular frame is formed by the first checking pattern and the second pair of parallel sides of the first rectangular frame is formed by the second and third checking patterns. Overlap accuracy of the patterns is obtained by checking the location error between the fourth checking pattern and the first checking pattern and the location error between the fourth checking pattern and the second and third checking patterns respectively.