Abstract: The present invention provides a method for preparing a boron nitride thin film and the boron nitride thin film itself. The method primarily includes providing a precursor containing boron and nitrogen atoms to an energy control apparatus and forming an excited state of the precursor within this energy control apparatus. Finally, a material layer is formed on a substrate, where this material layer comprises boron nitride. The key feature of this method is the use of an energy control apparatus that includes a first electromagnetic wave source emitting electromagnetic waves within a specific wavelength range. The advantage of this method is that it can be operated at lower temperatures, reducing the risk of thermal damage to the substrate and also decreasing energy consumption. Additionally, the method includes several optional steps that can further enhance the formation of the boron nitride thin film.

Abstract: The present invention relates to an efficient process of synthesizing some known Ertapenem compounds and to provide new intermediate compounds of Meropenem and Doripenem. The process and the intermediate can substantially increase the effective yield and reduce the impurity generation. The present invention further provides a novel and effective process for recovering and purifying ertapenem compounds by utilizing a low cost, materials with chemical stability as a carrier for isolating ertapenem compounds from extracts.

Abstract: The present invention relates to preparing carbapenem intermediates that are useful to produce Ertapenem, Meropenem and Doripenem; and provides an effective process for recovering ertapenem compounds.

Abstract: The present invention relates to preparing carbapenem intermediates that are useful to produce Ertapenem, Meropenem and Doripenem.