Abstract: Semiconductor devices including backside vias with enlarged backside portions and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure in a first device layer; a front-side interconnect structure on a front-side of the first device layer; a first dielectric layer on a backside of the first device layer; a first contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and a backside interconnect structure on a backside of the first dielectric layer and the first contact, the first contact including a first portion having first tapered sidewalls and a second portion having second tapered sidewalls, widths of the first tapered sidewalls narrowing in a direction towards the backside interconnect structure, and widths of the second tapered sidewalls widening in a direction towards the backside interconnect structure.

Abstract: A driving circuit includes: a switching element having a first terminal to receive an input voltage, and a second terminal; an inductor coupled to the second terminal of the switching element; a switch and a current sensing element coupled in series to the second terminal of the switching element; and a control module compensating a voltage sensed by the current sensing element based on at least one of the input voltage and an output voltage across the switching element and the inductor to generate a compensated signal, and switching the switch from an ON state to an OFF state when the compensated signal exceeds a reference threshold for a delay time.

Abstract: A driving circuit includes: a switching element having a first terminal to receive an input voltage, and a second terminal; an inductor coupled to the second terminal of the switching element; a switch and a current sensing element coupled in series to the second terminal of the switching element; and a control module compensating a voltage sensed by the current sensing element based on at least one of the input voltage and an output voltage across the switching element and the inductor to generate a compensated signal, and switching the switch from an ON state to an OFF state when the compensated signal exceeds a reference threshold for a delay time.